William Xia

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Diode-based temperature sensor
- Patent number 10,578,497
- Issue date Mar 3, 2020
- QUALCOMM Incorporated
- William Xia
- G01 - MEASURING TESTING
Information Patent Grant
Bipolar junction transistor voltage-drop-based temperature sensors
- Patent number 9,970,826
- Issue date May 15, 2018
- QUALCOMM Incorporated
- William Xia
- G01 - MEASURING TESTING
Information Patent Grant
STT-MRAM design enhanced by switching current induced magnetic field
- Patent number 9,799,824
- Issue date Oct 24, 2017
- QUALCOMM Incorporated
- William H. Xia
- G11 - INFORMATION STORAGE
Information Patent Grant
Bondable device including a hydrophilic layer
- Patent number 9,773,741
- Issue date Sep 26, 2017
- QUALCOMM Incorporated
- Shiqun Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STT-MRAM design enhanced by switching current induced magnetic field
- Patent number 9,385,305
- Issue date Jul 5, 2016
- QUALCOMM Incorporated
- William H. Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array structural design of Magnetoresistive Random Access Memory (M...
- Patent number 8,625,341
- Issue date Jan 7, 2014
- QUALCOMM Incorporated
- William H. Xia
- G11 - INFORMATION STORAGE
Information Patent Grant
Symmetric STT-MRAM bit cell design
- Patent number 8,264,052
- Issue date Sep 11, 2012
- QUALCOMM Incorporated
- William Xia
- G11 - INFORMATION STORAGE
Information Patent Grant
Array structural design of magnetoresistive random access memory (M...
- Patent number 8,159,870
- Issue date Apr 17, 2012
- QUALCOMM Incorporated
- William Xia
- G11 - INFORMATION STORAGE
Information Patent Grant
Pad design with buffers for STT-MRAM or other short pulse signal tr...
- Patent number 8,094,486
- Issue date Jan 10, 2012
- QUALCOMM Incorporated
- William Xia
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
STT-MRAM bit cell having a rectangular bottom electrode plate and i...
- Patent number 8,085,581
- Issue date Dec 27, 2011
- QUALCOMM Incorporated
- William Xia
- G11 - INFORMATION STORAGE
Information Patent Grant
Reliability of vias and diagnosis by e-beam probing
- Patent number 6,573,735
- Issue date Jun 3, 2003
- QUALCOMM Incorporated
- William Xia
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
DIODE-BASED TEMPERATURE SENSOR
- Publication number 20190086272
- Publication date Mar 21, 2019
- QUALCOMM Incorporated
- William XIA
- G01 - MEASURING TESTING
Information Patent Application
STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD
- Publication number 20160276576
- Publication date Sep 22, 2016
- QUALCOMM Incorporated
- William H. XIA
- G11 - INFORMATION STORAGE
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR-BASED TEMPERATURE SENSORS
- Publication number 20160258819
- Publication date Sep 8, 2016
- QUALCOMM Incorporated
- William XIA
- G01 - MEASURING TESTING
Information Patent Application
STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD
- Publication number 20140231940
- Publication date Aug 21, 2014
- QUALCOMM Incorporated
- William H. Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Array Structural Design of Magnetoresistive Random Access Memory (M...
- Publication number 20130100732
- Publication date Apr 25, 2013
- QUALCOMM Incorporated
- William H. Xia
- G11 - INFORMATION STORAGE
Information Patent Application
STT-MRAM Bit Cell Having a Rectangular Bottom Electrode Plate And I...
- Publication number 20100054028
- Publication date Mar 4, 2010
- QUALCOMM Incorporated
- William Xia
- G11 - INFORMATION STORAGE
Information Patent Application
Symmetric STT-MRAM Bit Cell Design
- Publication number 20100054027
- Publication date Mar 4, 2010
- QUALCOMM Incorporated
- William Xia
- G11 - INFORMATION STORAGE
Information Patent Application
Low loading pad design for STT MRAM or other short pulse signal tra...
- Publication number 20090290406
- Publication date Nov 26, 2009
- QUALCOMM Incorporated
- William Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pad design with buffers for STT-MRAM or other short pulse signal tr...
- Publication number 20090290409
- Publication date Nov 26, 2009
- QUALCOMM Incorporated
- William Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Array Structural Design of Magnetoresistive Random Access Memory (M...
- Publication number 20090251949
- Publication date Oct 8, 2009
- QUALCOMM Incorporated
- William Xia
- G11 - INFORMATION STORAGE
Information Patent Application
Reliability of vias and diagnosis by E-beam probing
- Publication number 20020186028
- Publication date Dec 12, 2002
- William Xia
- G01 - MEASURING TESTING

William Xia

Person

Patents Grantslast 30 patents

Diode-based temperature sensor

Bipolar junction transistor voltage-drop-based temperature sensors

STT-MRAM design enhanced by switching current induced magnetic field

Bondable device including a hydrophilic layer

STT-MRAM design enhanced by switching current induced magnetic field

Array structural design of Magnetoresistive Random Access Memory (M...

Symmetric STT-MRAM bit cell design

Array structural design of magnetoresistive random access memory (M...

Pad design with buffers for STT-MRAM or other short pulse signal tr...

STT-MRAM bit cell having a rectangular bottom electrode plate and i...

Reliability of vias and diagnosis by e-beam probing

Patents Applicationslast 30 patents

DIODE-BASED TEMPERATURE SENSOR

STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD

BIPOLAR JUNCTION TRANSISTOR-BASED TEMPERATURE SENSORS

STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD

Array Structural Design of Magnetoresistive Random Access Memory (M...

STT-MRAM Bit Cell Having a Rectangular Bottom Electrode Plate And I...

Symmetric STT-MRAM Bit Cell Design

Low loading pad design for STT MRAM or other short pulse signal tra...

Pad design with buffers for STT-MRAM or other short pulse signal tr...

Array Structural Design of Magnetoresistive Random Access Memory (M...

Reliability of vias and diagnosis by E-beam probing