Winston Shue

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method to remove copper without pattern density effect
- Patent number 6,995,089
- Issue date Feb 7, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei Chou
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Barrier free copper interconnect by multi-layer copper seed
- Patent number 6,943,111
- Issue date Sep 13, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating an electrodeposition and electro-mechanical...
- Patent number 6,793,797
- Issue date Sep 21, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Wei Chou
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Barrier-free copper interconnect
- Patent number 6,706,629
- Issue date Mar 16, 2004
- Taiwan Semiconductor Manufacturing Company
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper back-end-of-line by electropolish
- Patent number 6,649,513
- Issue date Nov 18, 2003
- Taiwan Semiconductor Manufacturing Company
- Ming-Hsing Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce metal silicide void formation
- Patent number 6,627,527
- Issue date Sep 30, 2003
- Taiwan Semiconductor Manufacturing Company
- Maureen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a protective layer included in metal filled semic...
- Patent number 6,555,474
- Issue date Apr 29, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Metal interconnect features with a doping gradient
- Publication number 20060027460
- Publication date Feb 9, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung Liang Chang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Barrier free copper interconnect by multi-layer copper seed
- Publication number 20050263902
- Publication date Dec 1, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to remove copper without pattern density effect
- Publication number 20040224509
- Publication date Nov 11, 2004
- Taiwan Semicondutor Manufacturing Co.
- Shih-Wei Chou
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Barrier free copper interconnect by multi-layer copper seed
- Publication number 20040157431
- Publication date Aug 12, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jing-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for integrating an electrodeposition and electro-mechanical...
- Publication number 20030183530
- Publication date Oct 2, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei Chou
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Winston Shue

Person

Patents Grantslast 30 patents

Method to remove copper without pattern density effect

Barrier free copper interconnect by multi-layer copper seed

Method for integrating an electrodeposition and electro-mechanical...

Barrier-free copper interconnect

Copper back-end-of-line by electropolish

Method to reduce metal silicide void formation

Method of forming a protective layer included in metal filled semic...

Patents Applicationslast 30 patents

Metal interconnect features with a doping gradient

Barrier free copper interconnect by multi-layer copper seed

Method to remove copper without pattern density effect

Barrier free copper interconnect by multi-layer copper seed

Method for integrating an electrodeposition and electro-mechanical...