Witold P. Maszara

Person

Morgan Hill, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming low defect replacement fins for a FinFET semicon...
- Patent number 9,614,058
- Issue date Apr 4, 2017
- GLOBALFOUNDRIES Inc.
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming different FinFET devices with different threshol...
- Patent number 9,564,367
- Issue date Feb 7, 2017
- GLOBALFOUNDRIES Inc.
- Ajey P. Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel cladding last process flow for forming a channel region on...
- Patent number 9,508,853
- Issue date Nov 29, 2016
- GLOBALFOUNDRIES Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having structure with fractional dimension of...
- Patent number 9,460,924
- Issue date Oct 4, 2016
- GLOBALFOUNDRIES, INC.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming stressed channel regions for a FinFET semiconduc...
- Patent number 9,412,822
- Issue date Aug 9, 2016
- GLOBALFOUNDRIES Inc.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel cladding last process flow for forming a channel region on...
- Patent number 9,362,405
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming stressed channel regions for a FinFET semiconduc...
- Patent number 9,349,840
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement fins for a FinFET semiconductor devi...
- Patent number 9,240,342
- Issue date Jan 19, 2016
- GLOBALFOUNDRIES Inc.
- Ajey P. Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming stressed channel regions for a FinFET semiconduc...
- Patent number 9,214,553
- Issue date Dec 15, 2015
- GLOBALFOUNDRIES Inc.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making fins and fin field effect transistors (FinFETs)
- Patent number 8,859,389
- Issue date Oct 14, 2014
- Kabushiki Kaisha Toshiba
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating electrically-isolated finFET semiconductor...
- Patent number 8,828,839
- Issue date Sep 9, 2014
- GLOBALFOUNDRIES, INC.
- David P. Brunco
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for forming isolated fin structures on bulk semiconductor m...
- Patent number 8,716,074
- Issue date May 6, 2014
- GLOBALFOUNDRIES, INC.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming FinFET devices with alternative channel materials
- Patent number 8,673,718
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming FinFET devices with alternative channel materials
- Patent number 8,580,642
- Issue date Nov 12, 2013
- GLOBALFOUNDRIES Inc.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fully depleted silicon on insulator semiconductor device
- Patent number 8,502,283
- Issue date Aug 6, 2013
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a finned semiconductor device structure
- Patent number 8,466,034
- Issue date Jun 18, 2013
- GLOBALFOUNDRIES, INC.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming isolated fin structures on bulk semiconductor m...
- Patent number 8,334,177
- Issue date Dec 18, 2012
- GLOBALFOUNDRIES, INC.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming isolated fin structures on bulk semiconductor m...
- Patent number 8,101,486
- Issue date Jan 24, 2012
- GLOBALFOUNDRIES Inc.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin body semiconductor devices having improved contact resistance...
- Patent number 8,084,330
- Issue date Dec 27, 2011
- GLOBALFOUNDRIES Inc.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully silicided gate structure for FinFET devices
- Patent number 8,008,136
- Issue date Aug 30, 2011
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming fin structures using a sacrificial etch stop laye...
- Patent number 7,871,873
- Issue date Jan 18, 2011
- Global Foundries Inc.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fully depleted silicon on insulator semiconductor device a...
- Patent number 7,306,997
- Issue date Dec 11, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of abrupt junctions in devices by using silicide growth d...
- Patent number 7,306,998
- Issue date Dec 11, 2007
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow junction semiconductor
- Patent number 7,298,012
- Issue date Nov 20, 2007
- Advanced Micro Devices, Inc.
- Mario M. Pelella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of abrupt junctions in devices by using silicide growth d...
- Patent number 7,081,655
- Issue date Jul 25, 2006
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of finFET using a sidewall epitaxial layer
- Patent number 7,078,299
- Issue date Jul 18, 2006
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Shallow junction semiconductor and method for the fabrication thereof
- Patent number 7,033,916
- Issue date Apr 25, 2006
- Advanced Micro Devices, Inc.
- Mario M. Pelella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing as a channel region to reduce source/drain juncti...
- Patent number 6,955,969
- Issue date Oct 18, 2005
- Advanced Micro Devices, Inc.
- Ihsan J. Djomehri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor solid phase epitaxy damage control method and integra...
- Patent number 6,933,579
- Issue date Aug 23, 2005
- Advanced Micro Devices, Inc.
- William George En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-compounded contacts, and method of ma...
- Patent number 6,872,644
- Issue date Mar 29, 2005
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET SEMICONDUCTOR DEVICES WITH STRESSED CHANNEL REGIONS
- Publication number 20160293706
- Publication date Oct 6, 2016
- GLOBALFOUNDRIES INC.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON...
- Publication number 20160204261
- Publication date Jul 14, 2016
- GLOBALFOUNDRIES INC.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON...
- Publication number 20160163863
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING METASTABLE REPLACEMENT FINS FOR A FINFET SEMICON...
- Publication number 20160064250
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Ajey P. Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMICONDUC...
- Publication number 20160035863
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES INC.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICON...
- Publication number 20160013296
- Publication date Jan 14, 2016
- GLOBALFOUNDRIES INC.
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMICONDUC...
- Publication number 20150255608
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMICONDUC...
- Publication number 20150255542
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVI...
- Publication number 20150024573
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES Inc.
- Ajey P. Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICON...
- Publication number 20140264488
- Publication date Sep 18, 2014
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING ELECTRICALLY-ISOLATED FINFET SEMICONDUCTOR...
- Publication number 20140213033
- Publication date Jul 31, 2014
- GLOBALFOUNDRIES, Inc.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DIFFERENT FINFET DEVICES WITH DIFFERENT THRESHOL...
- Publication number 20140070322
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES INC.
- Ajey P. Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINFET DEVICES WITH ALTERNATIVE CHANNEL MATERIALS
- Publication number 20140011341
- Publication date Jan 9, 2014
- GLOBALFOUNDRIES INC.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINFET DEVICES WITH ALTERNATIVE CHANNEL MATERIALS
- Publication number 20130309847
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES INC.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR M...
- Publication number 20130005114
- Publication date Jan 3, 2013
- GLOBALFOUNDRIES INC.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
- Publication number 20120193751
- Publication date Aug 2, 2012
- Toshiba America Electronic Components, Inc
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR M...
- Publication number 20120040517
- Publication date Feb 16, 2012
- GLOBALFOUNDRIES INC.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FINNED SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20110237046
- Publication date Sep 29, 2011
- GLOBALFOUNDRIES INC.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR M...
- Publication number 20110081764
- Publication date Apr 7, 2011
- GLOBALFOUNDRIES INC.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN BODY SEMICONDUCTOR DEVICES HAVING IMPROVED CONTACT RESISTANCE...
- Publication number 20110062443
- Publication date Mar 17, 2011
- GLOBALFOUNDRIES INC.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FIN STRUCTURES USING A SACRIFICIAL ETCH STOP LAYE...
- Publication number 20100248454
- Publication date Sep 30, 2010
- Advanced Micro Devices, Inc.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING STRUCTURE WITH FRACTIONAL DIMENSION OF...
- Publication number 20080237803
- Publication date Oct 2, 2008
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING STRUCTURE WITH SUB-LITHOGRAPHY DIMENSIONS
- Publication number 20080241574
- Publication date Oct 2, 2008
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
STRAINED FULLY DEPLETED SILICON ON INSULATOR SEMICONDUCTOR DEVICE
- Publication number 20080054316
- Publication date Mar 6, 2008
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ABRUPT JUNCTIONS IN DEVICES BY USING SILICIDE GROWTH D...
- Publication number 20060211245
- Publication date Sep 21, 2006
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW JUNCTION SEMICONDUCTOR
- Publication number 20060180873
- Publication date Aug 17, 2006
- Mario M. Pelella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES
- Publication number 20060177998
- Publication date Aug 10, 2006
- Harrity & Snyder, L.L.P.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained fully depleted silicon on insulator semiconductor device a...
- Publication number 20060099752
- Publication date May 11, 2006
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of abrupt junctions in devices by using silicide growth d...
- Publication number 20050121731
- Publication date Jun 9, 2005
- Witold P. Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing as a channel region to reduce source/drain juncti...
- Publication number 20050048743
- Publication date Mar 3, 2005
- Advanced Micro Devices, Inc.
- Ihsan J. Djomehri
- H01 - BASIC ELECTRIC ELEMENTS

Witold P. Maszara

Person

Patents Grantslast 30 patents

Methods of forming low defect replacement fins for a FinFET semicon...

Methods of forming different FinFET devices with different threshol...

Channel cladding last process flow for forming a channel region on...

Semiconductor device having structure with fractional dimension of...

Methods of forming stressed channel regions for a FinFET semiconduc...

Channel cladding last process flow for forming a channel region on...

Methods of forming stressed channel regions for a FinFET semiconduc...

Methods of forming replacement fins for a FinFET semiconductor devi...

Methods of forming stressed channel regions for a FinFET semiconduc...

Methods of making fins and fin field effect transistors (FinFETs)

Methods for fabricating electrically-isolated finFET semiconductor...

Methods for forming isolated fin structures on bulk semiconductor m...

Methods of forming FinFET devices with alternative channel materials

Methods of forming FinFET devices with alternative channel materials

Strained fully depleted silicon on insulator semiconductor device

Method of manufacturing a finned semiconductor device structure

Methods for forming isolated fin structures on bulk semiconductor m...

Methods for forming isolated fin structures on bulk semiconductor m...

Thin body semiconductor devices having improved contact resistance...

Fully silicided gate structure for FinFET devices

Method of forming fin structures using a sacrificial etch stop laye...

Strained fully depleted silicon on insulator semiconductor device a...

Formation of abrupt junctions in devices by using silicide growth d...

Shallow junction semiconductor

Formation of abrupt junctions in devices by using silicide growth d...

Formation of finFET using a sidewall epitaxial layer

Shallow junction semiconductor and method for the fabrication thereof

Method of growing as a channel region to reduce source/drain juncti...

Semiconductor solid phase epitaxy damage control method and integra...

Semiconductor device with non-compounded contacts, and method of ma...

Patents Applicationslast 30 patents

FINFET SEMICONDUCTOR DEVICES WITH STRESSED CHANNEL REGIONS

CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON...

CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON...

METHODS OF FORMING METASTABLE REPLACEMENT FINS FOR A FINFET SEMICON...

METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMICONDUC...

METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICON...

METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMICONDUC...

METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMICONDUC...

METHODS OF FORMING REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVI...

METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICON...

METHODS FOR FABRICATING ELECTRICALLY-ISOLATED FINFET SEMICONDUCTOR...

METHODS OF FORMING DIFFERENT FINFET DEVICES WITH DIFFERENT THRESHOL...

METHODS OF FORMING FINFET DEVICES WITH ALTERNATIVE CHANNEL MATERIALS

METHODS OF FORMING FINFET DEVICES WITH ALTERNATIVE CHANNEL MATERIALS

METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR M...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR M...

METHOD OF MANUFACTURING A FINNED SEMICONDUCTOR DEVICE STRUCTURE

METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR M...

THIN BODY SEMICONDUCTOR DEVICES HAVING IMPROVED CONTACT RESISTANCE...

METHOD OF FORMING FIN STRUCTURES USING A SACRIFICIAL ETCH STOP LAYE...

SEMICONDUCTOR DEVICE HAVING STRUCTURE WITH FRACTIONAL DIMENSION OF...

SEMICONDUCTOR DEVICE HAVING STRUCTURE WITH SUB-LITHOGRAPHY DIMENSIONS

STRAINED FULLY DEPLETED SILICON ON INSULATOR SEMICONDUCTOR DEVICE

FORMATION OF ABRUPT JUNCTIONS IN DEVICES BY USING SILICIDE GROWTH D...

SHALLOW JUNCTION SEMICONDUCTOR

FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES

Strained fully depleted silicon on insulator semiconductor device a...

Formation of abrupt junctions in devices by using silicide growth d...

Method of growing as a channel region to reduce source/drain juncti...