Wolfgang Bergner

Person

Klagenfurt, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a silicon carbide semiconductor component
- Patent number 11,855,147
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,842,938
- Issue date Dec 12, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a varying gate runner resistivity per area
- Patent number 11,417,747
- Issue date Aug 16, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a semiconductor body of silicon carbide
- Patent number 11,282,926
- Issue date Mar 22, 2022
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,217,500
- Issue date Jan 4, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench contact structure and manufac...
- Patent number 11,133,378
- Issue date Sep 28, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide body and method of m...
- Patent number 11,063,142
- Issue date Jul 13, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component comprising trench gate stru...
- Patent number 11,043,560
- Issue date Jun 22, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device and methods of manufacturing thereof
- Patent number 10,896,952
- Issue date Jan 19, 2021
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide body and method of m...
- Patent number 10,886,370
- Issue date Jan 5, 2021
- Infineon Technologies AG
- Florian Grasse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and a circuit for controlling a field effect...
- Patent number 10,818,749
- Issue date Oct 27, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region
- Patent number 10,727,330
- Issue date Jul 28, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and a drift structure an...
- Patent number 10,700,182
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having a source electrode contact trench
- Patent number 10,700,192
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC trench transistor device and methods of manufacturing thereof
- Patent number 10,586,845
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 10,217,636
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region and trench gate structure
- Patent number 10,211,306
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and transistor cell having a diode region
- Patent number 10,038,087
- Issue date Jul 31, 2018
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with stripe-shaped trench gate structures and...
- Patent number 9,960,243
- Issue date May 1, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,960,230
- Issue date May 1, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 9,934,972
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,923,053
- Issue date Mar 20, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and transistor cell having a diode region
- Patent number 9,876,103
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a trench electrode
- Patent number 9,837,527
- Issue date Dec 5, 2017
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,577,073
- Issue date Feb 21, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,543,414
- Issue date Jan 10, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with stripe-shaped trench gate structures and...
- Patent number 9,530,850
- Issue date Dec 27, 2016
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
- Publication number 20230395663
- Publication date Dec 7, 2023
- INFINEON TECHNOLOGIES AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20220093483
- Publication date Mar 24, 2022
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
- Publication number 20210273054
- Publication date Sep 2, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA
- Publication number 20210119006
- Publication date Apr 22, 2021
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Trench Contact Structure and Manufac...
- Publication number 20210020740
- Publication date Jan 21, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY OF SILICON CARBIDE
- Publication number 20200295142
- Publication date Sep 17, 2020
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...
- Publication number 20200203513
- Publication date Jun 25, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter KONRATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device and Methods of Manufacturing Thereof
- Publication number 20200194544
- Publication date Jun 18, 2020
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Silicon Carbide Body and Method of M...
- Publication number 20200144370
- Publication date May 7, 2020
- INFINEON TECHNOLOGIES AG
- Florian Grasse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Diode Region
- Publication number 20200044076
- Publication date Feb 6, 2020
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...
- Publication number 20200006544
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190341447
- Publication date Nov 7, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20190311966
- Publication date Oct 10, 2019
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component Comprising Trench Gate Stru...
- Publication number 20190172910
- Publication date Jun 6, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Source Electrode Contact Trench
- Publication number 20190157447
- Publication date May 23, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and a Drift Structure an...
- Publication number 20180331204
- Publication date Nov 15, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Semiconductor Device and Transistor Cell Having a Diode Region
- Publication number 20180315845
- Publication date Nov 1, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor Device with a Variable Gate Dielectric Thickness
- Publication number 20180248000
- Publication date Aug 30, 2018
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20180204725
- Publication date Jul 19, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Diode Region and Trench Gate Structure
- Publication number 20180158920
- Publication date Jun 7, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Transistor Cell Having a Diode Region
- Publication number 20180122931
- Publication date May 3, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Source Trench Electrode
- Publication number 20180053841
- Publication date Feb 22, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide-Bandgap Semiconductor Device with Trench Gate Structures
- Publication number 20170345905
- Publication date Nov 30, 2017
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and a Circuit for Controlling a Field Effect...
- Publication number 20170170264
- Publication date Jun 15, 2017
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-Carbide Transistor Device with a Shielded Gate
- Publication number 20170117352
- Publication date Apr 27, 2017
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20170103894
- Publication date Apr 13, 2017
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Stripe-Shaped Trench Gate Structures and...
- Publication number 20170077251
- Publication date Mar 16, 2017
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Transistor Cell Having a Diode Region
- Publication number 20170033212
- Publication date Feb 2, 2017
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Wolfgang Bergner

Person

Patents Grantslast 30 patents

Method for producing a silicon carbide semiconductor component

Semiconductor device and method for forming a semiconductor device

Silicon carbide field-effect transistor including shielding areas

SiC device with channel regions extending along at least one of the...

Transistor device with a varying gate runner resistivity per area

Semiconductor device with a semiconductor body of silicon carbide

Semiconductor device and method for forming a semiconductor device

Semiconductor device including trench contact structure and manufac...

Silicon carbide field-effect transistor including shielding areas

Semiconductor device including silicon carbide body and method of m...

Silicon carbide semiconductor component comprising trench gate stru...

SiC device and methods of manufacturing thereof

Semiconductor device including silicon carbide body and method of m...

Semiconductor devices and a circuit for controlling a field effect...

Semiconductor device with diode region

Semiconductor device with transistor cells and a drift structure an...

Semiconductor device having a source electrode contact trench

SiC trench transistor device and methods of manufacturing thereof

Method of manufacturing a silicon carbide semiconductor device by r...

Semiconductor device with diode region and trench gate structure

Semiconductor device and transistor cell having a diode region

Semiconductor device with stripe-shaped trench gate structures and...

Silicon-carbide transistor device with a shielded gate

Method of manufacturing a silicon carbide semiconductor device by r...

Silicon-carbide transistor device with a shielded gate

Semiconductor device and transistor cell having a diode region

Semiconductor device with a trench electrode

Method of forming a silicon-carbide device with a shielded gate

Method of forming a silicon-carbide device with a shielded gate

Semiconductor device with stripe-shaped trench gate structures and...

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT

Semiconductor Device and Method for Forming a Semiconductor Device

Silicon Carbide Semiconductor Component

METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT

SiC Device with Channel Regions Extending Along at least one of the...

TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA

Semiconductor Device Including Trench Contact Structure and Manufac...

SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY OF SILICON CARBIDE

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...

SiC Device and Methods of Manufacturing Thereof

Semiconductor Device Including Silicon Carbide Body and Method of M...

Semiconductor Device with Diode Region

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...

Silicon Carbide Semiconductor Component

Semiconductor Device and Method for Forming a Semiconductor Device

Silicon Carbide Semiconductor Component Comprising Trench Gate Stru...

Semiconductor Device Having a Source Electrode Contact Trench

Semiconductor Device with Transistor Cells and a Drift Structure an...

Semiconductor Device and Transistor Cell Having a Diode Region

Vertical Transistor Device with a Variable Gate Dielectric Thickness

Method of Manufacturing a Silicon Carbide Semiconductor Device by R...

Semiconductor Device with Diode Region and Trench Gate Structure

Semiconductor Device and Transistor Cell Having a Diode Region

Semiconductor Device with a Source Trench Electrode

Wide-Bandgap Semiconductor Device with Trench Gate Structures

Semiconductor Devices and a Circuit for Controlling a Field Effect...

Silicon-Carbide Transistor Device with a Shielded Gate

Method of Manufacturing a Silicon Carbide Semiconductor Device by R...

Semiconductor Device with Stripe-Shaped Trench Gate Structures and...

Semiconductor Device and Transistor Cell Having a Diode Region