Wolfgang Jantscher

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide device with transistor cell and clamp regions in a...
- Patent number 12,057,473
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench gate structure and buried shi...
- Patent number 11,961,904
- Issue date Apr 16, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with transistor cell and clamp region
- Patent number 11,876,133
- Issue date Jan 16, 2024
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 11,545,561
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a transistor device having a superjunction str...
- Patent number 11,527,608
- Issue date Dec 13, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate structure and method of man...
- Patent number 11,211,468
- Issue date Dec 28, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a superjunction transistor device
- Patent number 10,971,582
- Issue date Apr 6, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 10,903,341
- Issue date Jan 26, 2021
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-based superjunction semiconductor device
- Patent number 10,541,301
- Issue date Jan 21, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming recombination centers in a semiconductor device
- Patent number 10,347,491
- Issue date Jul 9, 2019
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method of manufacturing semiconductor devic...
- Patent number 10,269,896
- Issue date Apr 23, 2019
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-based superjunction semiconductor device
- Patent number 9,859,361
- Issue date Jan 2, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS having a non-depletable extension zone formed between an acti...
- Patent number 9,773,863
- Issue date Sep 26, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor wafer and method of manufacturing semiconductor devic...
- Patent number 9,653,540
- Issue date May 16, 2017
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including proton irr...
- Patent number 9,012,980
- Issue date Apr 21, 2015
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...
- Publication number 20240222498
- Publication date Jul 4, 2024
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20220102549
- Publication date Mar 31, 2022
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...
- Publication number 20220102487
- Publication date Mar 31, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRENCH GATE STRUCTURE
- Publication number 20220085186
- Publication date Mar 17, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...
- Publication number 20210408279
- Publication date Dec 30, 2021
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A TRANSISTOR DEVICE HAVING A SUPERJUNCTION STR...
- Publication number 20210193796
- Publication date Jun 24, 2021
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing a MOSFET
- Publication number 20210151584
- Publication date May 20, 2021
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate Structure and Method of Man...
- Publication number 20200312979
- Publication date Oct 1, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Superjunction Transistor Device
- Publication number 20200044019
- Publication date Feb 6, 2020
- Infineon Technologies Dresden GmbH & Co. KG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing a MOSFET
- Publication number 20190081158
- Publication date Mar 14, 2019
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Recombination Centers in a Semiconductor Device
- Publication number 20180182629
- Publication date Jun 28, 2018
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-Based Superjunction Semiconductor Device
- Publication number 20180138266
- Publication date May 17, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Field Dielectric in an Edge Area
- Publication number 20170373140
- Publication date Dec 28, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Wafer and Method of Manufacturing Semiconductor Devic...
- Publication number 20170243938
- Publication date Aug 24, 2017
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Wafer and Method of Manufacturing Semiconductor Devic...
- Publication number 20160329398
- Publication date Nov 10, 2016
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-Based Superjunction Semiconductor Device
- Publication number 20160233295
- Publication date Aug 11, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD DIELECTRIC IN AN EDGE AREA
- Publication number 20150333168
- Publication date Nov 19, 2015
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS

Wolfgang Jantscher

Person

Patents Grantslast 30 patents

Silicon carbide device with transistor cell and clamp regions in a...

Semiconductor device including trench gate structure and buried shi...

Silicon carbide device with transistor cell and clamp region

Methods for manufacturing a MOSFET

Method for producing a transistor device having a superjunction str...

Silicon carbide device with trench gate structure and method of man...

Method for forming a superjunction transistor device

Methods for manufacturing a MOSFET

SiC-based superjunction semiconductor device

Forming recombination centers in a semiconductor device

Semiconductor wafer and method of manufacturing semiconductor devic...

SiC-based superjunction semiconductor device

VDMOS having a non-depletable extension zone formed between an acti...

Semiconductor wafer and method of manufacturing semiconductor devic...

Method of manufacturing a semiconductor device including proton irr...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...

SILICON CARBIDE DEVICE WITH TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...

METHOD FOR PRODUCING A TRANSISTOR DEVICE HAVING A SUPERJUNCTION STR...

Methods for Manufacturing a MOSFET

Silicon Carbide Device with Trench Gate Structure and Method of Man...

Method for Forming a Superjunction Transistor Device

Methods for Manufacturing a MOSFET

Forming Recombination Centers in a Semiconductor Device

SiC-Based Superjunction Semiconductor Device

Semiconductor Device with Field Dielectric in an Edge Area

Semiconductor Wafer and Method of Manufacturing Semiconductor Devic...

Semiconductor Wafer and Method of Manufacturing Semiconductor Devic...

SiC-Based Superjunction Semiconductor Device

SEMICONDUCTOR DEVICE WITH FIELD DIELECTRIC IN AN EDGE AREA