Wolfgang Raberg

Person

Fountainebleau, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating an integrated electronic circuit with program...
- Patent number 8,492,810
- Issue date Jul 23, 2013
- Qimonda AG
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fast and local anneal of anti-ferromagneti...
- Patent number 8,470,092
- Issue date Jun 25, 2013
- International Business Machines Corporation
- Ulrich Karl Klostermann
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for fast and local anneal of anti-ferromagneti...
- Patent number 8,105,445
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Ulrich Karl Klostermann
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
MRAM structure using sacrificial layer for anti-ferromagnet and met...
- Patent number 7,782,577
- Issue date Aug 24, 2010
- Infineon Technologies AG
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory having cap structure for magnetoresistive junction and metho...
- Patent number 7,602,032
- Issue date Oct 13, 2009
- Altis Semiconductor SNC
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fast and local anneal of anti-ferromagnetic (AF) exchang...
- Patent number 7,473,656
- Issue date Jan 6, 2009
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and method of manufacture
- Patent number 7,423,282
- Issue date Sep 9, 2008
- Infineon Technologies AG
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for writing to magnetoresistive memory cells and magnetoresi...
- Patent number 7,408,803
- Issue date Aug 5, 2008
- Infineon Technologies AG
- Martin Freitag
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic liner for conductive lines of magnetic memory cells a...
- Patent number 7,344,896
- Issue date Mar 18, 2008
- Infineon Technologies AG
- Rainer Leuschner
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing an annular microstructure element
- Patent number 7,316,933
- Issue date Jan 8, 2008
- Infineon Technologies AG
- Alfred Kersch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a magnetic tunnel junction stack for a magneto...
- Patent number 7,211,446
- Issue date May 1, 2007
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junctions for MRAM devices
- Patent number 7,149,105
- Issue date Dec 12, 2006
- Infineon Technologies AG
- Stephen L. Brown
- G11 - INFORMATION STORAGE
Information Patent Grant
Spacer integration scheme in MRAM technology
- Patent number 6,985,384
- Issue date Jan 10, 2006
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MTJ stack with crystallization inhibiting layer
- Patent number 6,977,181
- Issue date Dec 20, 2005
- Infincon Technologies AG
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...
- Publication number 20100314360
- Publication date Dec 16, 2010
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...
- Publication number 20080308537
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory structure and method of manufacture
- Publication number 20080006810
- Publication date Jan 10, 2008
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM structure using sacrificial layer for anti-ferromagnet and met...
- Publication number 20070278602
- Publication date Dec 6, 2007
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating an integrated electronic circuit with program...
- Publication number 20070200155
- Publication date Aug 30, 2007
- Infineon Technologies AG
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory having cap structure for magnetoresistive junction and metho...
- Publication number 20060245116
- Publication date Nov 2, 2006
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Application
Method for writing to magnetoresistive memory cells and magnetoresi...
- Publication number 20060171196
- Publication date Aug 3, 2006
- Martin Freitag
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic liner for conductive lines of magnetic memory cells a...
- Publication number 20060019487
- Publication date Jan 26, 2006
- Rainer Leuschner
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ STACK WITH CRYSTALLIZATION INHIBITING LAYER
- Publication number 20050282295
- Publication date Dec 22, 2005
- Wolfgang Raberg
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE AND METHOD OF PATTERNING A MAGNETIC TUNNEL JUNCTION STACK...
- Publication number 20050277206
- Publication date Dec 15, 2005
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Application
Method for producing an annular microstructure element
- Publication number 20050250344
- Publication date Nov 10, 2005
- Alfred Kersch
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic tunnel junctions for MRAM devices
- Publication number 20050185454
- Publication date Aug 25, 2005
- Stephen L. Brown
- G11 - INFORMATION STORAGE
Information Patent Application
Method and apparatus for fast and local anneal of anti-ferromagneti...
- Publication number 20050087519
- Publication date Apr 28, 2005
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS

Wolfgang Raberg

Person

Patents Grantslast 30 patents

Method of fabricating an integrated electronic circuit with program...

Method and apparatus for fast and local anneal of anti-ferromagneti...

Method and apparatus for fast and local anneal of anti-ferromagneti...

MRAM structure using sacrificial layer for anti-ferromagnet and met...

Memory having cap structure for magnetoresistive junction and metho...

Method for fast and local anneal of anti-ferromagnetic (AF) exchang...

Memory structure and method of manufacture

Method for writing to magnetoresistive memory cells and magnetoresi...

Ferromagnetic liner for conductive lines of magnetic memory cells a...

Method for producing an annular microstructure element

Method of patterning a magnetic tunnel junction stack for a magneto...

Magnetic tunnel junctions for MRAM devices

Spacer integration scheme in MRAM technology

MTJ stack with crystallization inhibiting layer

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...

METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...

Memory structure and method of manufacture

MRAM structure using sacrificial layer for anti-ferromagnet and met...

Method of fabricating an integrated electronic circuit with program...

Memory having cap structure for magnetoresistive junction and metho...

Method for writing to magnetoresistive memory cells and magnetoresi...

Ferromagnetic liner for conductive lines of magnetic memory cells a...

MTJ STACK WITH CRYSTALLIZATION INHIBITING LAYER

STRUCTURE AND METHOD OF PATTERNING A MAGNETIC TUNNEL JUNCTION STACK...

Method for producing an annular microstructure element

Magnetic tunnel junctions for MRAM devices

Method and apparatus for fast and local anneal of anti-ferromagneti...