Wolodymyr Czubatyj

Person

Hamtramck, MI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device with low reset current
- Patent number 9,000,408
- Issue date Apr 7, 2015
- Ovonyx, Inc.
- Sergey Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 8,796,101
- Issue date Aug 5, 2014
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance materials with superior data retention characte...
- Patent number 8,685,291
- Issue date Apr 1, 2014
- Ovonyx, Inc.
- Carl Schell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of making same
- Patent number 8,581,223
- Issue date Nov 12, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel variable resistance memory cell utilizing crystalline pr...
- Patent number 8,363,446
- Issue date Jan 29, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Breakdown layer via lateral diffusion
- Patent number 8,350,661
- Issue date Jan 8, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 8,344,348
- Issue date Jan 1, 2013
- Ovonyx, Inc.
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change device with offset contact
- Patent number 8,344,350
- Issue date Jan 1, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 8,269,208
- Issue date Sep 18, 2012
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory that switches between crystalline phases
- Patent number 8,178,385
- Issue date May 15, 2012
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of programming multi-layer chalcogenide devices
- Patent number 8,000,125
- Issue date Aug 16, 2011
- Ovonyx, Inc.
- Regino Sandoval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature and pressure control methods to fill features with prog...
- Patent number 7,994,034
- Issue date Aug 9, 2011
- Ovonyx, Inc.
- Jeff Fournier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of drift in phase-change memory via thermally-managed pro...
- Patent number 7,978,508
- Issue date Jul 12, 2011
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change device with offset contact
- Patent number 7,952,087
- Issue date May 31, 2011
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite chalcogenide materials and devices
- Patent number 7,935,951
- Issue date May 3, 2011
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory that switches between crystalline phases
- Patent number 7,923,724
- Issue date Apr 12, 2011
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of making same
- Patent number 7,902,536
- Issue date Mar 8, 2011
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Chalcogenide devices exhibiting stable operation from the as-fabric...
- Patent number 7,786,462
- Issue date Aug 31, 2010
- Ovonyx, Inc.
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer chalcogenide devices
- Patent number 7,767,992
- Issue date Aug 3, 2010
- Ovonyx, Inc.
- Regino Sandoval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of making same
- Patent number 7,723,715
- Issue date May 25, 2010
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically rewritable non-volatile memory element and method of m...
- Patent number 7,692,272
- Issue date Apr 6, 2010
- Elpida Memory, Inc.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a carbon layer between phase change layers of a phase chang...
- Patent number 7,649,191
- Issue date Jan 19, 2010
- Intel Corporation
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically rewritable non-volatile memory element and method of m...
- Patent number 7,589,364
- Issue date Sep 15, 2009
- Elpida Memory, Inc.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chalcogenide devices and materials having reduced germanium or tell...
- Patent number 7,525,117
- Issue date Apr 28, 2009
- Ovonyx, Inc.
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with improved contacts
- Patent number 7,473,574
- Issue date Jan 6, 2009
- Ovonyx, Inc.
- Sergey A. Kostylev
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistance memory element with threshold switching mat...
- Patent number 7,459,762
- Issue date Dec 2, 2008
- Ovonyx, Inc.
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically programmable memory element with improved contacts
- Patent number 7,407,829
- Issue date Aug 5, 2008
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of accelerated life testing of programmable resistance memo...
- Patent number 7,327,602
- Issue date Feb 5, 2008
- Ovonyx, Inc.
- Sergey A. Kostylev
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming a carbon layer between phase change layers of a phase chang...
- Patent number 7,282,730
- Issue date Oct 16, 2007
- Intel Corporation
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reading phase change memories without triggering reset cell thresho...
- Patent number 7,280,390
- Issue date Oct 9, 2007
- Ovonyx, Inc.
- Sergey A. Kostylev
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Memory Device
- Publication number 20120329237
- Publication date Dec 27, 2012
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device and Method of Making Same
- Publication number 20110227027
- Publication date Sep 22, 2011
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Application
Phase Change Device with Offset Contact
- Publication number 20110194340
- Publication date Aug 11, 2011
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memory That Switches Between Crystalline Phases
- Publication number 20110157970
- Publication date Jun 30, 2011
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable Resistance Materials with Superior Data Retention Characte...
- Publication number 20110084240
- Publication date Apr 14, 2011
- Carl Schell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chalcogenide Devices Exhibiting Stable Operation from the As-Fabric...
- Publication number 20100321991
- Publication date Dec 23, 2010
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Breakdown Layer via Lateral Diffusion
- Publication number 20100301988
- Publication date Dec 2, 2010
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory and method of making same
- Publication number 20100283029
- Publication date Nov 11, 2010
- Charles Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF CHALCOGENIDE MATERIALS VIA VAPORIZATION PROCESS
- Publication number 20100203709
- Publication date Aug 12, 2010
- Wolodymyr Czubatyj
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Deposition of Chalcogenide Materials via Vaporization Process
- Publication number 20100203263
- Publication date Aug 12, 2010
- Wolodymyr Czubatyj
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Reduction of Drift in Phase-Change Memory via Thermally-Managed Pro...
- Publication number 20100182826
- Publication date Jul 22, 2010
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device
- Publication number 20100084625
- Publication date Apr 8, 2010
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilevel Variable Resistance Memory Cell Utilizing Crystalline Pr...
- Publication number 20100027328
- Publication date Feb 4, 2010
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Application
Method for manufacturing Chalcogenide devices
- Publication number 20090298222
- Publication date Dec 3, 2009
- Ovonyx, Inc.
- Tyler Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature and pressure control methods to fill features with prog...
- Publication number 20090227092
- Publication date Sep 10, 2009
- Ovonyx, Inc.
- Jeff Fournier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device
- Publication number 20090225588
- Publication date Sep 10, 2009
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile programmable variable resistance element
- Publication number 20090166601
- Publication date Jul 2, 2009
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device With Low Reset Current
- Publication number 20090095951
- Publication date Apr 16, 2009
- Ovonyx, Inc.
- Sergey Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory element with improved contacts
- Publication number 20090057645
- Publication date Mar 5, 2009
- Sergey A. Kostylev
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Programming Multi-Layer Chalcogenide Devices
- Publication number 20080273372
- Publication date Nov 6, 2008
- Regino Sandoval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change device with offset contact
- Publication number 20080224120
- Publication date Sep 18, 2008
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chalcogenide semiconductor memory device with insulating dielectric
- Publication number 20080064198
- Publication date Mar 13, 2008
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Application
Chalcogenide devices exhibiting stable operation from the as-fabric...
- Publication number 20080048167
- Publication date Feb 28, 2008
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layered chalcogenide and related devices having enhanced oper...
- Publication number 20080042119
- Publication date Feb 21, 2008
- Ovonyx, Inc.
- Regino Sandoval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Chalcogenide Materials and Devices
- Publication number 20080035907
- Publication date Feb 14, 2008
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MAKING SAME
- Publication number 20080023685
- Publication date Jan 31, 2008
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a carbon layer between phase change layers of a phase chang...
- Publication number 20070297213
- Publication date Dec 27, 2007
- Intel Corporation
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory element with improved contacts
- Publication number 20070235709
- Publication date Oct 11, 2007
- Sergey A. Kostylev
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically rewritable non-volatile memory element and method of m...
- Publication number 20070164267
- Publication date Jul 19, 2007
- ELPIDA MEMORY, INC.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrically rewritable non-volatile memory element and method of m...
- Publication number 20070096074
- Publication date May 3, 2007
- ELPIDA MEMORY, INC.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS

Wolodymyr Czubatyj

Person

Patents Grantslast 30 patents

Memory device with low reset current

Memory device

Variable resistance materials with superior data retention characte...

Memory device and method of making same

Multilevel variable resistance memory cell utilizing crystalline pr...

Breakdown layer via lateral diffusion

Memory device

Phase change device with offset contact

Memory device

Phase change memory that switches between crystalline phases

Method of programming multi-layer chalcogenide devices

Temperature and pressure control methods to fill features with prog...

Reduction of drift in phase-change memory via thermally-managed pro...

Phase change device with offset contact

Composite chalcogenide materials and devices

Phase change memory that switches between crystalline phases

Memory device and method of making same

Chalcogenide devices exhibiting stable operation from the as-fabric...

Multi-layer chalcogenide devices

Memory device and method of making same

Electrically rewritable non-volatile memory element and method of m...

Forming a carbon layer between phase change layers of a phase chang...

Electrically rewritable non-volatile memory element and method of m...

Chalcogenide devices and materials having reduced germanium or tell...

Memory element with improved contacts

Programmable resistance memory element with threshold switching mat...

Electrically programmable memory element with improved contacts

Methods of accelerated life testing of programmable resistance memo...

Forming a carbon layer between phase change layers of a phase chang...

Reading phase change memories without triggering reset cell thresho...

Patents Applicationslast 30 patents

Memory Device

Memory Device and Method of Making Same

Phase Change Device with Offset Contact

Phase Change Memory That Switches Between Crystalline Phases

Variable Resistance Materials with Superior Data Retention Characte...

Chalcogenide Devices Exhibiting Stable Operation from the As-Fabric...

Breakdown Layer via Lateral Diffusion

Programmable resistance memory and method of making same

DEPOSITION OF CHALCOGENIDE MATERIALS VIA VAPORIZATION PROCESS

Deposition of Chalcogenide Materials via Vaporization Process

Reduction of Drift in Phase-Change Memory via Thermally-Managed Pro...

Memory Device

Multilevel Variable Resistance Memory Cell Utilizing Crystalline Pr...

Method for manufacturing Chalcogenide devices

Temperature and pressure control methods to fill features with prog...

Memory Device

Non-volatile programmable variable resistance element

Memory Device With Low Reset Current

Memory element with improved contacts

Method of Programming Multi-Layer Chalcogenide Devices

Phase change device with offset contact

Chalcogenide semiconductor memory device with insulating dielectric

Chalcogenide devices exhibiting stable operation from the as-fabric...

Multi-layered chalcogenide and related devices having enhanced oper...

Composite Chalcogenide Materials and Devices

MEMORY DEVICE AND METHOD OF MAKING SAME

Forming a carbon layer between phase change layers of a phase chang...

Memory element with improved contacts

Electrically rewritable non-volatile memory element and method of m...

Electrically rewritable non-volatile memory element and method of m...