Woo Jin Lee

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming insulation film by modified PEALD
- Patent number 10,378,106
- Issue date Aug 13, 2019
- ASM IP Holding B.V.
- Akiko Kobayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of tailoring conformality of Si-containing film
- Patent number 8,669,185
- Issue date Mar 11, 2014
- ASM Japan K.K.
- Shigeyuki Onizawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming conformal film having si-N bonds on high-aspect r...
- Patent number 8,394,466
- Issue date Mar 12, 2013
- ASM Japan K.K.
- Kuo-wei Hong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming stress-tuned dielectric film having Si-N bonds by...
- Patent number 8,334,219
- Issue date Dec 18, 2012
- ASM Japan K.K.
- Woo-Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of depositing dielectric film having Si-N bonds by modified...
- Patent number 8,173,554
- Issue date May 8, 2012
- ASM Japan K.K.
- Woo Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming conformal dielectric film having Si-N bonds by PECVD
- Patent number 8,142,862
- Issue date Mar 27, 2012
- ASM Japan K.K.
- Woo Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of depositing dielectric film having Si-N bonds by modified...
- Patent number 8,129,291
- Issue date Mar 6, 2012
- ASM Japan K.K.
- Woo Jin Lee
Information Patent Grant
Method for forming dielectric film using siloxane-silazane mixture
- Patent number 8,003,174
- Issue date Aug 23, 2011
- ASM Japan K.K.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming conformal dielectric film having Si-N bonds by PECVD
- Patent number 7,972,980
- Issue date Jul 5, 2011
- ASM Japan K.K.
- Woo Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming conformal dielectric film having Si-N bonds by PECVD
- Patent number 7,919,416
- Issue date Apr 5, 2011
- ASM Japan K.K.
- Woo-Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming highly conformal amorphous carbon layer
- Patent number 7,842,622
- Issue date Nov 30, 2010
- ASM Japan K.K.
- Woo-Jin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation technology on semiconductor substrate
- Patent number 7,622,369
- Issue date Nov 24, 2009
- ASM Japan K.K.
- Woo Jin Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Forming Conformal Film Having Si-N Bonds on High-Aspect R...
- Publication number 20120058282
- Publication date Mar 8, 2012
- ASM JAPAN K.K.
- Kuo-wei Hong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM
- Publication number 20120028469
- Publication date Feb 2, 2012
- ASM JAPAN K.K.
- Shigeyuki Onizawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED...
- Publication number 20110086516
- Publication date Apr 14, 2011
- ASM JAPAN K.K.
- Woo Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Forming Stress-Tuned Dielectric Film Having Si-N Bonds by...
- Publication number 20110014795
- Publication date Jan 20, 2011
- ASM JAPAN K.K.
- Woo Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING HIGHLY CONFORMAL AMORPHOUS CARBON LAYER
- Publication number 20100291713
- Publication date Nov 18, 2010
- ASM JAPAN K.K.
- Woo-Jin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD
- Publication number 20100221925
- Publication date Sep 2, 2010
- ASM JAPAN K.K.
- Woo Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD
- Publication number 20100184302
- Publication date Jul 22, 2010
- ASM JAPAN K.K.
- Woo Jin LEE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD
- Publication number 20100144162
- Publication date Jun 10, 2010
- ASM JAPAN K.K.
- Woo Jin Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Forming Insulation Film by Modified PEALD
- Publication number 20100124621
- Publication date May 20, 2010
- ASM JAPAN K.K.
- Akiko Kobayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DEVICE ISOLATION TECHNOLOGY ON SEMICONDUCTOR SUBSTRATE
- Publication number 20090298257
- Publication date Dec 3, 2009
- ASM JAPAN K.K.
- Woo Jin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DIELECTRIC FILM USING SILOXANE-SILAZANE MIXTURE
- Publication number 20090156017
- Publication date Jun 18, 2009
- ASM JAPAN K.K.
- Atsuki FUKAZAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Woo Jin Lee

Person

Patents Grantslast 30 patents

Method of forming insulation film by modified PEALD

Method of tailoring conformality of Si-containing film

Method of forming conformal film having si-N bonds on high-aspect r...

Method of forming stress-tuned dielectric film having Si-N bonds by...

Method of depositing dielectric film having Si-N bonds by modified...

Method of forming conformal dielectric film having Si-N bonds by PECVD

Method of depositing dielectric film having Si-N bonds by modified...

Method for forming dielectric film using siloxane-silazane mixture

Method of forming conformal dielectric film having Si-N bonds by PECVD

Method of forming conformal dielectric film having Si-N bonds by PECVD

Method of forming highly conformal amorphous carbon layer

Device isolation technology on semiconductor substrate

Patents Applicationslast 30 patents

Method of Forming Conformal Film Having Si-N Bonds on High-Aspect R...

METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM

METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED...

Method of Forming Stress-Tuned Dielectric Film Having Si-N Bonds by...

METHOD OF FORMING HIGHLY CONFORMAL AMORPHOUS CARBON LAYER

METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD

Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD

METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD

Method of Forming Insulation Film by Modified PEALD

DEVICE ISOLATION TECHNOLOGY ON SEMICONDUCTOR SUBSTRATE

METHOD FOR FORMING DIELECTRIC FILM USING SILOXANE-SILAZANE MIXTURE