Woong Chul SHIN

Person

Daejeon, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Multilayer electronic component having moisture-proof layer on body...
- Patent number 11,651,900
- Issue date May 16, 2023
- SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Chae Min Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of purifying carbon nanotubes
- Patent number 10,703,632
- Issue date Jul 7, 2020
- SK Innovation Co., Ltd.
- Yeon Hwa La
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of recovering 1,3-butadiene and methylethylketone from dehyd...
- Patent number 10,040,733
- Issue date Aug 7, 2018
- SK Innovation Co., Ltd.
- Dae Sung Song
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Phase change memory devices including phase change layer formed by...
- Patent number 8,445,318
- Issue date May 21, 2013
- Samsung Electronics Co., Ltd.
- Woong-chul Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline aluminum oxide layers having increased energy band gap,...
- Patent number 8,062,978
- Issue date Nov 22, 2011
- Samsung Electronics Co., Inc.
- Sang-moo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming aluminum oxide layer and method of manufacturing...
- Patent number 8,043,952
- Issue date Oct 25, 2011
- Samsung Electronics Co., Ltd.
- Sang-moo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming phase change layer using a germanium precursor an...
- Patent number 8,003,162
- Issue date Aug 23, 2011
- Samsung Electronics Co., Ltd.
- Woong-chul Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a phase change layer and method of manufacturing...
- Patent number 7,902,048
- Issue date Mar 8, 2011
- Samsung Electronics Co., Ltd.
- Woong-chul Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of surface treating a phase change layer and method of manuf...
- Patent number 7,754,586
- Issue date Jul 13, 2010
- Samsung Electronics Co., Ltd.
- Woong-chul Shin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory devices and programming methods thereof includi...
- Patent number 7,668,016
- Issue date Feb 23, 2010
- Samsung Electronics Co., Ltd.
- Jung-hun Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage node including diffusion barrier layer, phase change memory...
- Patent number 7,655,940
- Issue date Feb 2, 2010
- Samsung Electronics Co., Ltd.
- Jong-bong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating phase change RAM including a fullerene layer
- Patent number 7,572,662
- Issue date Aug 11, 2009
- Samsung Electronics Co., Ltd.
- Yoon-ho Khang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multibit phase change memory device and method of driving the same
- Patent number 7,233,017
- Issue date Jun 19, 2007
- Electronics and Telecommunications Research Institute
- Sung Min Yoon
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
WIRE COATING APPARATUS
- Publication number 20240194632
- Publication date Jun 13, 2024
- Woong Chul SHIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
BONDING WIRE FOR SEMICONDUCTOR PACKAGE
- Publication number 20240096516
- Publication date Mar 21, 2024
- Woong Chul SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER ELECTRONIC COMPONENT HAVING MOISTURE-PROOF LAYER ON BODY...
- Publication number 20230245830
- Publication date Aug 3, 2023
- Samsung Electro-Mechanics Co., Ltd.
- Chae Min PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER ELECTRONIC COMPONENT
- Publication number 20210090806
- Publication date Mar 25, 2021
- Samsung Electro-Mechanics Co., Ltd.
- Chae Min PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINAL HOLDER AND TERMINAL CASE
- Publication number 20200214408
- Publication date Jul 9, 2020
- Woong Soo SHIN
- A45 - HAND OR TRAVELLING ARTICLES
Information Patent Application
METHOD OF PURIFYING CARBON NANOTUBES
- Publication number 20180065855
- Publication date Mar 8, 2018
- SK INNOVATION CO., LTD.
- Yeon Hwa LA
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF RECOVERING 1,3-BUTADIENE AND METHYLETHYLKETONE FROM DEHYD...
- Publication number 20160251281
- Publication date Sep 1, 2016
- SK GLOBAL CHEMICAL CO., LTD.
- Dae Sung Song
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Application
HORIZONTAL-TYPE ATOMIC LAYER DEPOSITION APPARATUS FOR LARGE-AREA SU...
- Publication number 20140318456
- Publication date Oct 30, 2014
- NCD CO., LTD.
- Woong Chul SHIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS FOR LARGE-AREA ATOMIC LAYER DEPOSITION
- Publication number 20140165910
- Publication date Jun 19, 2014
- NCD CO., LTD.
- Woong Chul SHIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Phase change memory devices including phase change layer formed by...
- Publication number 20110212568
- Publication date Sep 1, 2011
- Woong-chul Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Storage nodes, phase change memories including a doped phase change...
- Publication number 20090279352
- Publication date Nov 12, 2009
- Jin-seo Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crystalline aluminum oxide layers having increased energy band gap,...
- Publication number 20090071934
- Publication date Mar 19, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Sang-moo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming aluminum oxide layer and method of manufacturing...
- Publication number 20090061613
- Publication date Mar 5, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Sang-moo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory devices and programming methods thereof includi...
- Publication number 20090034341
- Publication date Feb 5, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jung-hun Sung
- G11 - INFORMATION STORAGE
Information Patent Application
Gate stack, capacitorless dynamic random access memory including th...
- Publication number 20090021979
- Publication date Jan 22, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jung-hun Sung
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory devices including phase change layer formed by...
- Publication number 20080210924
- Publication date Sep 4, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Woong-chul Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change memory device and method of fabricating the same
- Publication number 20080173860
- Publication date Jul 24, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Woong-chul Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming phase change layer, method of manufacturing a sto...
- Publication number 20080156651
- Publication date Jul 3, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Youn-seon Kang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Phase change layers having different crystal lattices in single lay...
- Publication number 20080145702
- Publication date Jun 19, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Woong-chul Shin
- G11 - INFORMATION STORAGE
Information Patent Application
Storage node including diffusion barrier layer, phase change memory...
- Publication number 20080128677
- Publication date Jun 5, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Jong-bong Park
- G11 - INFORMATION STORAGE
Information Patent Application
Method of forming phase change layer using a germanium precursor an...
- Publication number 20080118636
- Publication date May 22, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Woong-chul Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming a phase change layer and method of manufacturing...
- Publication number 20080108175
- Publication date May 8, 2008
- Woong-chul Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of surface treating a phase change layer and method of manuf...
- Publication number 20080090326
- Publication date Apr 17, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Woong-chul Shin
- G11 - INFORMATION STORAGE
Information Patent Application
Method of manufacturing a thin film structure, method of manufactur...
- Publication number 20080050892
- Publication date Feb 28, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Woong-Chul Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Storage nodes, phase change memories including a doped phase change...
- Publication number 20080023686
- Publication date Jan 31, 2008
- Jin-seo Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming phase change material thin films and methods of...
- Publication number 20070160760
- Publication date Jul 12, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Woong-chul Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of fabricating phase change RAM including a fullerene layer
- Publication number 20070152754
- Publication date Jul 5, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Yoon-ho Khang
- G11 - INFORMATION STORAGE
Information Patent Application
Gate structure including multi-tunneling layer and method of fabric...
- Publication number 20070114572
- Publication date May 24, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Kwang-Soo Seol
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multibit phase change memory device and method of driving the same
- Publication number 20060091374
- Publication date May 4, 2006
- Sung Min Yoon
- G11 - INFORMATION STORAGE

Woong Chul SHIN

Person

Patents Grantslast 30 patents

Multilayer electronic component having moisture-proof layer on body...

Method of purifying carbon nanotubes

Method of recovering 1,3-butadiene and methylethylketone from dehyd...

Phase change memory devices including phase change layer formed by...

Crystalline aluminum oxide layers having increased energy band gap,...

Method of forming aluminum oxide layer and method of manufacturing...

Method of forming phase change layer using a germanium precursor an...

Method of forming a phase change layer and method of manufacturing...

Method of surface treating a phase change layer and method of manuf...

Non-volatile memory devices and programming methods thereof includi...

Storage node including diffusion barrier layer, phase change memory...

Method of fabricating phase change RAM including a fullerene layer

Multibit phase change memory device and method of driving the same

Patents Applicationslast 30 patents

WIRE COATING APPARATUS

BONDING WIRE FOR SEMICONDUCTOR PACKAGE

MULTILAYER ELECTRONIC COMPONENT HAVING MOISTURE-PROOF LAYER ON BODY...

MULTILAYER ELECTRONIC COMPONENT

TERMINAL HOLDER AND TERMINAL CASE

METHOD OF PURIFYING CARBON NANOTUBES

METHOD OF RECOVERING 1,3-BUTADIENE AND METHYLETHYLKETONE FROM DEHYD...

HORIZONTAL-TYPE ATOMIC LAYER DEPOSITION APPARATUS FOR LARGE-AREA SU...

APPARATUS FOR LARGE-AREA ATOMIC LAYER DEPOSITION

Phase change memory devices including phase change layer formed by...

Storage nodes, phase change memories including a doped phase change...

Crystalline aluminum oxide layers having increased energy band gap,...

Method of forming aluminum oxide layer and method of manufacturing...

Non-volatile memory devices and programming methods thereof includi...

Gate stack, capacitorless dynamic random access memory including th...

Phase change memory devices including phase change layer formed by...

Phase change memory device and method of fabricating the same

Method of forming phase change layer, method of manufacturing a sto...

Phase change layers having different crystal lattices in single lay...

Storage node including diffusion barrier layer, phase change memory...

Method of forming phase change layer using a germanium precursor an...

Method of forming a phase change layer and method of manufacturing...

Method of surface treating a phase change layer and method of manuf...

Method of manufacturing a thin film structure, method of manufactur...

Storage nodes, phase change memories including a doped phase change...

Methods of forming phase change material thin films and methods of...

Method of fabricating phase change RAM including a fullerene layer

Gate structure including multi-tunneling layer and method of fabric...

Multibit phase change memory device and method of driving the same