Woun-suck Yang

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Recessed transistor and method of manufacturing the same
- Patent number 9,012,982
- Issue date Apr 21, 2015
- Samsung Electronics Co., Ltd.
- Keun-Nam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit semiconductor device including stacked level tra...
- Patent number 7,977,725
- Issue date Jul 12, 2011
- Samsung Electronics Co., Ltd.
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing multi-channel transistor device and multi-c...
- Patent number 7,935,600
- Issue date May 3, 2011
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having a junction extend...
- Patent number 7,803,684
- Issue date Sep 28, 2010
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing multi-channel transistor device and multi-c...
- Patent number 7,655,988
- Issue date Feb 2, 2010
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a junction extended by a selective epit...
- Patent number 7,592,686
- Issue date Sep 22, 2009
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating fin field effect transistor using isotropic e...
- Patent number 7,429,505
- Issue date Sep 30, 2008
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor of a semiconductor device having a punchthrough protecti...
- Patent number 7,393,769
- Issue date Jul 1, 2008
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates in FinFETs with trench insulation surrounding FIN p...
- Patent number 7,279,774
- Issue date Oct 9, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating fin field effect transistor using isotropic e...
- Patent number 7,153,733
- Issue date Dec 26, 2006
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING MULTI-CHANNEL TRANSISTOR DEVICE AND MULTI-C...
- Publication number 20100093146
- Publication date Apr 15, 2010
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating semiconductor device having a junction extend...
- Publication number 20100015768
- Publication date Jan 21, 2010
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Semiconductor Device Including Stacked Level Tra...
- Publication number 20090108318
- Publication date Apr 30, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed transistor and method of manufacturing the same
- Publication number 20080185641
- Publication date Aug 7, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Keun-Nam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM devices including fin transistors and methods of operating the...
- Publication number 20080084731
- Publication date Apr 10, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Chul Lee
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE WITH CHANNEL FIN STRUCTURE AND METHO...
- Publication number 20070293011
- Publication date Dec 20, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR USING ISOTROPIC E...
- Publication number 20070077693
- Publication date Apr 5, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing multi-channel transistor device and multi-c...
- Publication number 20060073662
- Publication date Apr 6, 2006
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a junction extended by a selective epit...
- Publication number 20060054969
- Publication date Mar 16, 2006
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a transistor with void-free gate electrode
- Publication number 20060046370
- Publication date Mar 2, 2006
- Yong-chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating fin field effect transistor using isotropic e...
- Publication number 20050208715
- Publication date Sep 22, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor of a semiconductor device having a punchthrough protecti...
- Publication number 20050199930
- Publication date Sep 15, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor device with channel fin structure and metho...
- Publication number 20050179030
- Publication date Aug 18, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS

Woun-suck Yang

Person

Patents Grantslast 30 patents

Recessed transistor and method of manufacturing the same

Integrated circuit semiconductor device including stacked level tra...

Method of manufacturing multi-channel transistor device and multi-c...

Method of fabricating semiconductor device having a junction extend...

Method of manufacturing multi-channel transistor device and multi-c...

Semiconductor device having a junction extended by a selective epit...

Method of fabricating fin field effect transistor using isotropic e...

Transistor of a semiconductor device having a punchthrough protecti...

Bulk substrates in FinFETs with trench insulation surrounding FIN p...

Method of fabricating fin field effect transistor using isotropic e...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING MULTI-CHANNEL TRANSISTOR DEVICE AND MULTI-C...

Method of fabricating semiconductor device having a junction extend...

Integrated Circuit Semiconductor Device Including Stacked Level Tra...

Recessed transistor and method of manufacturing the same

DRAM devices including fin transistors and methods of operating the...

FIELD EFFECT TRANSISTOR DEVICE WITH CHANNEL FIN STRUCTURE AND METHO...

METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR USING ISOTROPIC E...

Method of manufacturing multi-channel transistor device and multi-c...

Semiconductor device having a junction extended by a selective epit...

Method of manufacturing a transistor with void-free gate electrode

Method of fabricating fin field effect transistor using isotropic e...

Transistor of a semiconductor device having a punchthrough protecti...

Field effect transistor device with channel fin structure and metho...