Xia An

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for characterizing fluctuation induced by single particle ir...
- Patent number 11,525,857
- Issue date Dec 13, 2022
- Peking University
- Xia An
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Radiation-hardened-by-design (RHBD) multi-gate device
- Patent number 9,508,852
- Issue date Nov 29, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of a germanium-based schottky junction
- Patent number 9,484,208
- Issue date Nov 1, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing gate dielectric layer deposited on germanium-...
- Patent number 9,312,126
- Issue date Apr 12, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for isolating active regions in germanium-based MOS device
- Patent number 9,147,597
- Issue date Sep 29, 2015
- Peking University
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for predicting reliable lifetime of SOI mosfet device
- Patent number 9,086,448
- Issue date Jul 21, 2015
- Peking University
- Ru Huang
- G01 - MEASURING TESTING
Information Patent Grant
CMOS device for reducing radiation-induced charge collection and me...
- Patent number 8,877,594
- Issue date Nov 4, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ge-based NMOS device and method for fabricating the same
- Patent number 8,865,543
- Issue date Oct 21, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor nano circular ring
- Patent number 8,722,312
- Issue date May 13, 2014
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strained channel field effect transistor and the method for fabrica...
- Patent number 8,673,722
- Issue date Mar 18, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device for reducing charge sharing effect and fabrication meth...
- Patent number 8,652,929
- Issue date Feb 18, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface treatment method for germanium-based device
- Patent number 8,632,691
- Issue date Jan 21, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 8,541,847
- Issue date Sep 24, 2013
- Peking University
- Xia An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for introducing channel stress and field effect transistor f...
- Patent number 8,450,155
- Issue date May 28, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR CHARACTERIZING FLUCTUATION INDUCED BY SINGLE PARTICLE IR...
- Publication number 20220276299
- Publication date Sep 1, 2022
- Peking University
- Xia AN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PREPARATION METHOD OF A GERMANIUM-BASED SCHOTTKY JUNCTION
- Publication number 20160133475
- Publication date May 12, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Radiation-Hardened-by-Design (RHBD) Multi-Gate Device and a Fabri...
- Publication number 20160027911
- Publication date Jan 28, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SEPARATING THRESHOLD VOLTAGE SHIFTS CAUSED BY TWO EFFECT...
- Publication number 20150219698
- Publication date Aug 6, 2015
- Peking University
- Xia An
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR PROCESSING GATE DIELECTRIC LAYER DEPOSITED ON GERMANIUM-...
- Publication number 20150179439
- Publication date Jun 25, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ISOLATING ACTIVE REGIONS IN GERMANIUM-BASED MOS DEVICE
- Publication number 20150031188
- Publication date Jan 29, 2015
- Peking University
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION RESISTANT CMOS DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20150014765
- Publication date Jan 15, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GE-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20140117465
- Publication date May 1, 2014
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE TREATMENT METHOD FOR GERMANIUM-BASED DEVICE
- Publication number 20130309875
- Publication date Nov 21, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS Device for Reducing Charge Sharing Effect and Fabrication Meth...
- Publication number 20130161757
- Publication date Jun 27, 2013
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE FOR REDUCING RADIATION-INDUCED CHARGE COLLECTION AND ME...
- Publication number 20130119445
- Publication date May 16, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Predicting Reliable Lifetime of SOI Mosfet Device
- Publication number 20130103351
- Publication date Apr 25, 2013
- Ru Huang
- G01 - MEASURING TESTING
Information Patent Application
GERMANIUM-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20130069126
- Publication date Mar 21, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Field Effect Transistor and the Method for Fabrica...
- Publication number 20130043515
- Publication date Feb 21, 2013
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OBTAINING DISTRIBUTION OF CHARGES ALONG CHANNEL IN MOS T...
- Publication number 20130013245
- Publication date Jan 10, 2013
- Peking University
- Ru Huang
- G01 - MEASURING TESTING
Information Patent Application
FABRICATION METHOD OF GERMANIUM-BASED N-TYPE SCHOTTKY FIELD EFFECT...
- Publication number 20120289004
- Publication date Nov 15, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT METHOD FOR GERMANIUM BASED DEVICE
- Publication number 20120264311
- Publication date Oct 18, 2012
- Peking University
- Xia An
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR NANO CIRCULAR RING
- Publication number 20120190202
- Publication date Jul 26, 2012
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20120187495
- Publication date Jul 26, 2012
- Xia An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTRODUCING CHANNEL STRESS AND FIELD EFFECT TRANSISTOR F...
- Publication number 20120032239
- Publication date Feb 9, 2012
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for characterizing fluctuation induced by single particle ir...

Radiation-hardened-by-design (RHBD) multi-gate device

Preparation method of a germanium-based schottky junction

Method for processing gate dielectric layer deposited on germanium-...

Method for isolating active regions in germanium-based MOS device

Method for predicting reliable lifetime of SOI mosfet device

CMOS device for reducing radiation-induced charge collection and me...

Ge-based NMOS device and method for fabricating the same

Method for fabricating semiconductor nano circular ring

Strained channel field effect transistor and the method for fabrica...

CMOS device for reducing charge sharing effect and fabrication meth...

Interface treatment method for germanium-based device

Semiconductor device and method for fabricating the same

Method for introducing channel stress and field effect transistor f...

Patents Applicationslast 30 patents

METHOD FOR CHARACTERIZING FLUCTUATION INDUCED BY SINGLE PARTICLE IR...

PREPARATION METHOD OF A GERMANIUM-BASED SCHOTTKY JUNCTION

A Radiation-Hardened-by-Design (RHBD) Multi-Gate Device and a Fabri...

METHOD FOR SEPARATING THRESHOLD VOLTAGE SHIFTS CAUSED BY TWO EFFECT...

METHOD FOR PROCESSING GATE DIELECTRIC LAYER DEPOSITED ON GERMANIUM-...

METHOD FOR ISOLATING ACTIVE REGIONS IN GERMANIUM-BASED MOS DEVICE

RADIATION RESISTANT CMOS DEVICE AND METHOD FOR FABRICATING THE SAME

GE-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME

INTERFACE TREATMENT METHOD FOR GERMANIUM-BASED DEVICE

CMOS Device for Reducing Charge Sharing Effect and Fabrication Meth...

CMOS DEVICE FOR REDUCING RADIATION-INDUCED CHARGE COLLECTION AND ME...

Method for Predicting Reliable Lifetime of SOI Mosfet Device

GERMANIUM-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME

Strained Channel Field Effect Transistor and the Method for Fabrica...

METHOD FOR OBTAINING DISTRIBUTION OF CHARGES ALONG CHANNEL IN MOS T...

FABRICATION METHOD OF GERMANIUM-BASED N-TYPE SCHOTTKY FIELD EFFECT...

SURFACE TREATMENT METHOD FOR GERMANIUM BASED DEVICE

METHOD FOR FABRICATING SEMICONDUCTOR NANO CIRCULAR RING

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD FOR INTRODUCING CHANNEL STRESS AND FIELD EFFECT TRANSISTOR F...