Xiang Hui ZHAO

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Wuhan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Staircase formation in three-dimensional memory device
- Patent number 11,997,851
- Issue date May 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming hole structure in semiconductor device
- Patent number 11,876,016
- Issue date Jan 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming hole structure in semiconductor device
- Patent number 11,817,348
- Issue date Nov 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase formation in three-dimensional memory device
- Patent number 10,790,295
- Issue date Sep 29, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING HOLE STRUCTURE IN SEMICONDUCTOR DEVICE
- Publication number 20210104429
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE FORMATION IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200411538
- Publication date Dec 31, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HOLE STRUCTURE IN SEMICONDUCTOR DEVICE
- Publication number 20200243373
- Publication date Jul 30, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE FORMATION IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190355738
- Publication date Nov 21, 2019
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui ZHAO
- H01 - BASIC ELECTRIC ELEMENTS