Xiangguo Meng

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method for integrating gate dielectric layers of diff...
- Patent number 11,961,740
- Issue date Apr 16, 2024
- Shanghai Huali Integrated Circuit Corporation
- Lian Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for using oxidation layers to improve device su...
- Patent number 9,449,866
- Issue date Sep 20, 2016
- Shanghai Huali Microelectronics Corporation
- Quanbo Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for improved uniformity of SiGe thickness
- Patent number 9,390,915
- Issue date Jul 12, 2016
- Shanghai Huali Microelectronics Corporation
- Quanbo Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING FULLY DEPLETED SILICON-ON-INSULATOR PMOS DEV...
- Publication number 20240186402
- Publication date Jun 6, 2024
- Shanghai Huali Integrated Circuit Corporation
- Siyuan CHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR INTEGRATING GATE DIELECTRIC LAYERS OF DIFF...
- Publication number 20220139711
- Publication date May 5, 2022
- Shanghai Huali Integrated Circuit Corporation
- Lian LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS FOR IMPROVED UNIFORMITY OF SiGe THICKNESS
- Publication number 20160218005
- Publication date Jul 28, 2016
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Quanbo Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS FOR USING OXIDATION LAYERS TO IMPROVE DEVICE SU...
- Publication number 20150270127
- Publication date Sep 24, 2015
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Quanbo Li
- H01 - BASIC ELECTRIC ELEMENTS