Xiangzheng Bo

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Austin, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for making a transistor with a stressor
- Patent number 7,799,650
- Issue date Sep 21, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device using a stressor
- Patent number 7,727,870
- Issue date Jun 1, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with multiple tensile stre...
- Patent number 7,678,698
- Issue date Mar 16, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING A TRANSISTOR WITH A STRESSOR
- Publication number 20090042351
- Publication date Feb 12, 2009
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD
- Publication number 20080272411
- Publication date Nov 6, 2008
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A STRESSOR
- Publication number 20080261362
- Publication date Oct 23, 2008
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS