Xianjin Wan

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 12,185,550
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,956,953
- Issue date Apr 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,785,776
- Issue date Oct 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding contacts having capping layer and method for forming the same
- Patent number 11,715,718
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jie Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,545,505
- Issue date Jan 3, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,482,532
- Issue date Oct 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding contacts having capping layer and method for forming the same
- Patent number 11,177,231
- Issue date Nov 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jie Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three- dimensional memory device
- Patent number 10,910,397
- Issue date Feb 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 10,886,291
- Issue date Jan 5, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 10,847,532
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 10,818,631
- Issue date Oct 27, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xinsheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 10,811,380
- Issue date Oct 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xinsheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 10,553,604
- Issue date Feb 4, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240407172
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240188291
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230389323
- Publication date Nov 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING CONTACTS HAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME
- Publication number 20230317665
- Publication date Oct 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jie Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20230016627
- Publication date Jan 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230005950
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20220216178
- Publication date Jul 7, 2022
- Yangtze Memory Technologies Co., Ltd.
- Xinsheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20220020725
- Publication date Jan 20, 2022
- Yangtze Memory Technologies Co., Ltd.
- Xinsheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210126005
- Publication date Apr 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING CONTACTS HAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME
- Publication number 20210091033
- Publication date Mar 25, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jie Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20210074718
- Publication date Mar 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200152653
- Publication date May 14, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING CONTACTS HAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME
- Publication number 20200051945
- Publication date Feb 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jie Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20200006277
- Publication date Jan 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xinsheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20200006278
- Publication date Jan 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xinsheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20200006285
- Publication date Jan 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xinsheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND M...
- Publication number 20190081060
- Publication date Mar 14, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190043879
- Publication date Feb 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS

Xianjin Wan

Person

Patents Grantslast 30 patents

Through array contact structure of three-dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Through array contact structure of three-dimensional memory device

Bonding contacts having capping layer and method for forming the same

Through array contact structure of three-dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Bonding contacts having capping layer and method for forming the same

Through array contact structure of three- dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Joint opening structures of three-dimensional memory devices and me...

Semiconductor structure and method of forming the same

Semiconductor structure and forming method thereof

Through array contact structure of three-dimensional memory device

Patents Applicationslast 30 patents

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

SEMICONDUCTOR DEVICES

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

BONDING CONTACTS HAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

BONDING CONTACTS HAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

BONDING CONTACTS HAVING CAPPING LAYER AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND M...

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE