Xiao Li

Person

Hubei, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Staircase structure for memory device
- Patent number 12,137,558
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,010,838
- Issue date Jun 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-stack three-dimensional memory device and fabrication meth...
- Patent number 11,968,832
- Issue date Apr 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming channel hole plug of three-dimensional memory de...
- Patent number 11,943,928
- Issue date Mar 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,943,923
- Issue date Mar 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,889,686
- Issue date Jan 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Miao Shen
Information Patent Grant
Structure of 3D NAND memory device and method of forming the same
- Patent number 11,856,776
- Issue date Dec 26, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stacks having silicon nitride gate-to-gate dielectric layers...
- Patent number 11,849,582
- Issue date Dec 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,844,216
- Issue date Dec 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,825,656
- Issue date Nov 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,800,710
- Issue date Oct 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having a shielding layer and method...
- Patent number 11,758,729
- Issue date Sep 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with deposited semiconductor plugs...
- Patent number 11,758,722
- Issue date Sep 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
Information Patent Grant
Three-dimensional memory device having a shielding layer and method...
- Patent number 11,758,731
- Issue date Sep 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,706,920
- Issue date Jul 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,665,903
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stacks having silicon nitride gate-to-gate dielectric layers...
- Patent number 11,605,644
- Issue date Mar 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,581,332
- Issue date Feb 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having a shielding layer and method...
- Patent number 11,508,745
- Issue date Nov 22, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,502,102
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabrication methods thereof
- Patent number 11,462,565
- Issue date Oct 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device using comb-like routing structure for reduced metal l...
- Patent number 11,443,807
- Issue date Sep 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory device with select gate cut
- Patent number 11,430,811
- Issue date Aug 30, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Bonded semiconductor structures having bonding contacts made of ind...
- Patent number 11,430,756
- Issue date Aug 30, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stacks having silicon oxynitride gate-to-gate dielectric lay...
- Patent number 11,424,266
- Issue date Aug 23, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,404,441
- Issue date Aug 2, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus comprising manganese-cobalt spinel oxide/carbon catalyst
- Patent number 11,394,033
- Issue date Jul 19, 2022
- Cornell University
- Yao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,380,701
- Issue date Jul 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-stack three-dimensional memory devices and methods for formin...
- Patent number 11,367,737
- Issue date Jun 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving channel hole uniformity of a three-dimensional...
- Patent number 11,329,061
- Issue date May 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...
- Publication number 20240179911
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSIENT ELECTROMAGNETIC DEVICE WITH VARIABLE COIL SHAPES AND TURN...
- Publication number 20240125966
- Publication date Apr 18, 2024
- Yangtze River Survey Technology Research Institute, Ministry of Water Resources
- Yuesheng LUAN
- G01 - MEASURING TESTING
Information Patent Application
Novel 3D NAND Memory Device And Method of Forming The Same
- Publication number 20240090223
- Publication date Mar 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL SIGNAL ADJUSTMENT APPARATUS, DEVICE AND METHOD, AND STORAGE...
- Publication number 20230336267
- Publication date Oct 19, 2023
- ACCELINK TECHNOLOGIES CO., LTD.
- Zhi CHEN
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
COMMUNICATION STATION, OPTICAL COMMUNICATION SYSTEM, DATA TRANSMISS...
- Publication number 20230299867
- Publication date Sep 21, 2023
- ACCELINK TECHNOLOGIES CO., LTD.
- Li Xiao
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230084008
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230083030
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220328523
- Publication date Oct 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...
- Publication number 20220238556
- Publication date Jul 28, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220013541
- Publication date Jan 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20210408026
- Publication date Dec 30, 2021
- Yangtze Memory Technologies Co., Ltd.
- Miao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20210366930
- Publication date Nov 25, 2021
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Remote Optical Fiber Dispersion Compensation Device And Method, Rem...
- Publication number 20210328671
- Publication date Oct 21, 2021
- Accelink Technologies Co., Ltd.
- Li Xiao
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING A SHIELDING LAYER AND METHOD...
- Publication number 20210272976
- Publication date Sep 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE USING COMB-LIKE ROUTING STRUCTURE FOR REDUCED METAL L...
- Publication number 20210272632
- Publication date Sep 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang HUO
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED PAD STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20210265377
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF
- Publication number 20210225874
- Publication date Jul 22, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20210167088
- Publication date Jun 3, 2021
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210143179
- Publication date May 13, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210143180
- Publication date May 13, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded Pad Structures of Three-Dimensional Memory Devices and Fab...
- Publication number 20210134824
- Publication date May 6, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE USING COMB-LIKE ROUTING STRUCTURE FOR REDUCED METAL L...
- Publication number 20210118511
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang HUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210118896
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF
- Publication number 20210104546
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF
- Publication number 20210104547
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF
- Publication number 20210104548
- Publication date Apr 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210104532
- Publication date Apr 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING A SHIELDING LAYER AND METHOD...
- Publication number 20210104534
- Publication date Apr 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF
- Publication number 20210104541
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STACK THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMIN...
- Publication number 20210104543
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Staircase structure for memory device

Staircase structure for memory device

Multiple-stack three-dimensional memory device and fabrication meth...

Method for forming channel hole plug of three-dimensional memory de...

Three-dimensional memory devices and fabrication methods thereof

Vertical memory devices

Structure of 3D NAND memory device and method of forming the same

Memory stacks having silicon nitride gate-to-gate dielectric layers...

Three-dimensional memory devices and fabricating methods thereof

3D NAND memory device and method of forming the same

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory device having a shielding layer and method...

Three-dimensional memory device with deposited semiconductor plugs...

Three-dimensional memory device having a shielding layer and method...

Three-dimensional memory devices and fabrication methods thereof

Three-dimensional memory devices and fabrication methods thereof

Memory stacks having silicon nitride gate-to-gate dielectric layers...

Three-dimensional memory devices and fabrication methods thereof

Three-dimensional memory device having a shielding layer and method...

Three-dimensional memory devices and fabrication methods thereof

Three-dimensional memory devices and fabrication methods thereof

Memory device using comb-like routing structure for reduced metal l...

3D NAND memory device with select gate cut

Bonded semiconductor structures having bonding contacts made of ind...

Memory stacks having silicon oxynitride gate-to-gate dielectric lay...

3D NAND memory device and method of forming the same

Apparatus comprising manganese-cobalt spinel oxide/carbon catalyst

Memory device and forming method thereof

Multi-stack three-dimensional memory devices and methods for formin...

Method for improving channel hole uniformity of a three-dimensional...

Patents Applicationslast 30 patents

MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...

TRANSIENT ELECTROMAGNETIC DEVICE WITH VARIABLE COIL SHAPES AND TURN...

Novel 3D NAND Memory Device And Method of Forming The Same

OPTICAL SIGNAL ADJUSTMENT APPARATUS, DEVICE AND METHOD, AND STORAGE...

COMMUNICATION STATION, OPTICAL COMMUNICATION SYSTEM, DATA TRANSMISS...

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...

STRUCTURE OF 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

VERTICAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

Remote Optical Fiber Dispersion Compensation Device And Method, Rem...

THREE-DIMENSIONAL MEMORY DEVICE HAVING A SHIELDING LAYER AND METHOD...

MEMORY DEVICE USING COMB-LIKE ROUTING STRUCTURE FOR REDUCED METAL L...

EMBEDDED PAD STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

Embedded Pad Structures of Three-Dimensional Memory Devices and Fab...

MEMORY DEVICE USING COMB-LIKE ROUTING STRUCTURE FOR REDUCED METAL L...

MEMORY DEVICE AND FORMING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF

MEMORY DEVICE AND FORMING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE HAVING A SHIELDING LAYER AND METHOD...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF

MULTI-STACK THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMIN...