Xiaochuan Bi

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Sunnyvale, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Silicon IMPATT diode
- Patent number 10,103,278
- Issue date Oct 16, 2018
- Texas Instruments Incorporated
- Xiaochuan Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a baritt diode
- Patent number 9,525,077
- Issue date Dec 20, 2016
- Texas Instruments Incorporated
- Xiaochuan Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of the silicon IMPATT diode in an analog technology
- Patent number 9,412,879
- Issue date Aug 9, 2016
- Texas Instruments Incorporated
- Xiaochuan Bi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATION OF THE SILICON IMPATT DIODE IN AN ANALOG TECHNOLOGY
- Publication number 20160322511
- Publication date Nov 3, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Xiaochuan Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF THE SILICON IMPATT DIODE IN AN ANALOG TECHNOLOGY
- Publication number 20150021740
- Publication date Jan 22, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Xiaochuan Bi
- H01 - BASIC ELECTRIC ELEMENTS