Xiaochun Zhu

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Systems and methods for modifying neural networks for binary proces...
- Patent number 11,790,241
- Issue date Oct 17, 2023
- QUALCOMM Incorporated
- Matthias Reisser
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell for dot product operation in compute-in-memory chip
- Patent number 11,500,960
- Issue date Nov 15, 2022
- QUALCOMM Incorporated
- Zhongze Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Charge-sharing compute-in-memory system
- Patent number 11,494,629
- Issue date Nov 8, 2022
- QUALCOMM Incorporated
- Zhongze Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated device comprising memory bitcells comprising shared prel...
- Patent number 10,964,380
- Issue date Mar 30, 2021
- QUALCOMM Incorporated
- Zhongze Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random-access memory (SRAM) for in-memory computing
- Patent number 10,777,259
- Issue date Sep 15, 2020
- QUALCOMM Incorporated
- Zhongze Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 10,103,319
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-compensation of stray field of perpendicular magnetic elements
- Patent number 10,043,967
- Issue date Aug 7, 2018
- QUALCOMM Incorporated
- Wei-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary magnetic tunnel junction (MTJ) bit cell with shared b...
- Patent number 10,008,537
- Issue date Jun 26, 2018
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Thermally tolerant perpendicular magnetic anisotropy coupled elemen...
- Patent number 9,935,258
- Issue date Apr 3, 2018
- QUALCOMM Incorporated
- Wei-Chuan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing spin pumping induced damping of a free layer of a memory d...
- Patent number 9,929,211
- Issue date Mar 27, 2018
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamically controlling voltage for access operations to magneto-re...
- Patent number 9,842,638
- Issue date Dec 12, 2017
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamically controlling voltage for access operations to magneto-re...
- Patent number 9,754,654
- Issue date Sep 5, 2017
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Decoupling of source line layout from access transistor contact pla...
- Patent number 9,721,634
- Issue date Aug 1, 2017
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 9,634,237
- Issue date Apr 25, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic etch stop layer for spin-transfer torque magnetoresistive...
- Patent number 9,620,706
- Issue date Apr 11, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) devices employing a t...
- Patent number 9,590,010
- Issue date Mar 7, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference layer for perpendicular magnetic anisotropy magnetic tunn...
- Patent number 9,583,696
- Issue date Feb 28, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Reverse complement magnetic tunnel junction (MTJ) bit cells employi...
- Patent number 9,548,096
- Issue date Jan 17, 2017
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method of programming a memory cell
- Patent number 9,543,036
- Issue date Jan 10, 2017
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Reverse complement magnetic tunnel junction (MTJ) bit cells employi...
- Patent number 9,514,795
- Issue date Dec 6, 2016
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Shared source line magnetic tunnel junction (MTJ) bit cells employi...
- Patent number 9,496,314
- Issue date Nov 15, 2016
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction resistance comparison based physical unclo...
- Patent number 9,489,999
- Issue date Nov 8, 2016
- QUALCOMM Incorporated
- Brian Marc Rosenberg
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Magnesium oxide capping with a shorted path for perpendicular magne...
- Patent number 9,444,035
- Issue date Sep 13, 2016
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split write operation for resistive memory cache
- Patent number 9,411,727
- Issue date Aug 9, 2016
- QUALCOMM Incorporated
- Xiangyu Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Monolithic multi-channel adaptable STT-MRAM
- Patent number 9,384,810
- Issue date Jul 5, 2016
- QULACOMM Incorporated
- Seung H. Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing source loading effect in spin torque transfer magnetoresis...
- Patent number 9,368,715
- Issue date Jun 14, 2016
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) storage element and spin transfer to...
- Patent number 9,368,716
- Issue date Jun 14, 2016
- QUALCOMM Incorporated
- Shiqun Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physically unclonable function based on programming voltage of magn...
- Patent number 9,343,135
- Issue date May 17, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM sensing with magnetically annealed reference cell
- Patent number 9,324,404
- Issue date Apr 26, 2016
- QUALCOMM Incorporated
- Hari M. Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method of shared bit line MRAM
- Patent number 9,324,768
- Issue date Apr 26, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DIFFERENTIAL CHARGE SHARING FOR COMPUTE-IN-MEMORY (CIM) CELL
- Publication number 20220108742
- Publication date Apr 7, 2022
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
FLEXIBLE GAA NANOSHEET HEIGHT AND CHANNEL MATERIALS
- Publication number 20210233909
- Publication date Jul 29, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-SHARING COMPUTE-IN-MEMORY SYSTEM
- Publication number 20210133549
- Publication date May 6, 2021
- QUALCOMM Incorporated
- Zhongze WANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELL FOR DOT PRODUCT OPERATION IN COMPUTE-IN-MEMORY CHIP
- Publication number 20210124793
- Publication date Apr 29, 2021
- QUALCOMM Incorporated
- Zhongze WANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND METHODS FOR MODIFYING NEURAL NETWORKS FOR BINARY PROCES...
- Publication number 20210073650
- Publication date Mar 11, 2021
- QUALCOMM Incorporated
- Matthias REISSER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20170186942
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...
- Publication number 20170077387
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENTROPY SOURCE WITH MAGNETO-RESISTIVE ELEMENT FOR RANDOM NUMBER GEN...
- Publication number 20170010864
- Publication date Jan 12, 2017
- QUALCOMM Incorporated
- David JACOBSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIT CELL WITH SHARED BIT LINE
- Publication number 20160372518
- Publication date Dec 22, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLA...
- Publication number 20160315248
- Publication date Oct 27, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LIN...
- Publication number 20160254318
- Publication date Sep 1, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR AMELIORATING PERIPHERAL EDGE DAMAGE IN MAG...
- Publication number 20160254443
- Publication date Sep 1, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20160181508
- Publication date Jun 23, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...
- Publication number 20160155931
- Publication date Jun 2, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION RESISTANCE COMPARISON BASED PHYSICAL UNCLO...
- Publication number 20160148666
- Publication date May 26, 2016
- QUALCOMM Incorporated
- Brian Marc Rosenberg
- G11 - INFORMATION STORAGE
Information Patent Application
THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMEN...
- Publication number 20160126453
- Publication date May 5, 2016
- QUALCOMM Incorporated
- Wei-Chuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT WRITE OPERATION FOR RESISTIVE MEMORY CACHE
- Publication number 20160092355
- Publication date Mar 31, 2016
- QUALCOMM Incorporated
- Xiangyu DONG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...
- Publication number 20160072043
- Publication date Mar 10, 2016
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-COMPENSATION OF STRAY FIELD OF PERPENDICULAR MAGNETIC ELEMENTS
- Publication number 20160043304
- Publication date Feb 11, 2016
- QUALCOMM Incorporated
- Wei-Chuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20160005959
- Publication date Jan 7, 2016
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING SOURCE LOADING EFFECT IN SPIN TORQUE TRANSFER MAGNETORESIS...
- Publication number 20150349244
- Publication date Dec 3, 2015
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD OF PROGRAMMING A MEMORY CELL
- Publication number 20150340101
- Publication date Nov 26, 2015
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TRANSFER SWITCHING MAGNETIC ELEMENT FORMED FROM FERRIMAGNETIC...
- Publication number 20150303373
- Publication date Oct 22, 2015
- QUALCOMM Incorporated
- Wei-Chuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNN...
- Publication number 20150263266
- Publication date Sep 17, 2015
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT WRITE OPERATION FOR RESISTIVE MEMORY CACHE
- Publication number 20150121006
- Publication date Apr 30, 2015
- QUALCOMM Incorporated
- Xiangyu DONG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON PROGRAMMING VOLTAGE OF MAGN...
- Publication number 20150070979
- Publication date Mar 12, 2015
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL-...
- Publication number 20150074433
- Publication date Mar 12, 2015
- QUALCOMM Incorporated
- Xiaochun Zhu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON THE RANDOM LOGICAL STATE OF...
- Publication number 20150071431
- Publication date Mar 12, 2015
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON RESISTIVITY OF MAGNETORESIS...
- Publication number 20150071432
- Publication date Mar 12, 2015
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON THE INITIAL LOGICAL STATE O...
- Publication number 20150071430
- Publication date Mar 12, 2015
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE

Xiaochun Zhu

Person

Patents Grantslast 30 patents

Systems and methods for modifying neural networks for binary proces...

Memory cell for dot product operation in compute-in-memory chip

Charge-sharing compute-in-memory system

Integrated device comprising memory bitcells comprising shared prel...

Static random-access memory (SRAM) for in-memory computing

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Self-compensation of stray field of perpendicular magnetic elements

Complementary magnetic tunnel junction (MTJ) bit cell with shared b...

Thermally tolerant perpendicular magnetic anisotropy coupled elemen...

Reducing spin pumping induced damping of a free layer of a memory d...

Dynamically controlling voltage for access operations to magneto-re...

Dynamically controlling voltage for access operations to magneto-re...

Decoupling of source line layout from access transistor contact pla...

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Magnetic etch stop layer for spin-transfer torque magnetoresistive...

Perpendicular magnetic tunnel junction (pMTJ) devices employing a t...

Reference layer for perpendicular magnetic anisotropy magnetic tunn...

Reverse complement magnetic tunnel junction (MTJ) bit cells employi...

System and method of programming a memory cell

Reverse complement magnetic tunnel junction (MTJ) bit cells employi...

Shared source line magnetic tunnel junction (MTJ) bit cells employi...

Magnetic tunnel junction resistance comparison based physical unclo...

Magnesium oxide capping with a shorted path for perpendicular magne...

Split write operation for resistive memory cache

Monolithic multi-channel adaptable STT-MRAM

Reducing source loading effect in spin torque transfer magnetoresis...

Magnetic tunnel junction (MTJ) storage element and spin transfer to...

Physically unclonable function based on programming voltage of magn...

MRAM sensing with magnetically annealed reference cell

System and method of shared bit line MRAM

Patents Applicationslast 30 patents

DIFFERENTIAL CHARGE SHARING FOR COMPUTE-IN-MEMORY (CIM) CELL

FLEXIBLE GAA NANOSHEET HEIGHT AND CHANNEL MATERIALS

CHARGE-SHARING COMPUTE-IN-MEMORY SYSTEM

MEMORY CELL FOR DOT PRODUCT OPERATION IN COMPUTE-IN-MEMORY CHIP

SYSTEMS AND METHODS FOR MODIFYING NEURAL NETWORKS FOR BINARY PROCES...

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...

ENTROPY SOURCE WITH MAGNETO-RESISTIVE ELEMENT FOR RANDOM NUMBER GEN...

BIT CELL WITH SHARED BIT LINE

DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLA...

MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LIN...

METHOD AND APPARATUS FOR AMELIORATING PERIPHERAL EDGE DAMAGE IN MAG...

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...

MAGNETIC TUNNEL JUNCTION RESISTANCE COMPARISON BASED PHYSICAL UNCLO...

THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMEN...

SPLIT WRITE OPERATION FOR RESISTIVE MEMORY CACHE

MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...

SELF-COMPENSATION OF STRAY FIELD OF PERPENDICULAR MAGNETIC ELEMENTS

METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION STRUCTURE

REDUCING SOURCE LOADING EFFECT IN SPIN TORQUE TRANSFER MAGNETORESIS...

SYSTEM AND METHOD OF PROGRAMMING A MEMORY CELL

SPIN-TRANSFER SWITCHING MAGNETIC ELEMENT FORMED FROM FERRIMAGNETIC...

REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNN...

SPLIT WRITE OPERATION FOR RESISTIVE MEMORY CACHE

PHYSICALLY UNCLONABLE FUNCTION BASED ON PROGRAMMING VOLTAGE OF MAGN...

PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL-...

PHYSICALLY UNCLONABLE FUNCTION BASED ON THE RANDOM LOGICAL STATE OF...

PHYSICALLY UNCLONABLE FUNCTION BASED ON RESISTIVITY OF MAGNETORESIS...

PHYSICALLY UNCLONABLE FUNCTION BASED ON THE INITIAL LOGICAL STATE O...