Xiaojie Hao

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory element incorporating perpendicular enhancement layer
- Patent number 10,910,555
- Issue date Feb 2, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number RE47975
- Issue date May 5, 2020
- Avalanche Technology, Inc.
- Jing Zhang
Information Patent Grant
Selector device having asymmetric conductance for memory applications
- Patent number 10,559,624
- Issue date Feb 11, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for sensing memory element coupled to selector device
- Patent number 10,153,017
- Issue date Dec 11, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element with iridium anti-ferromagnetic coupling layer
- Patent number 10,032,979
- Issue date Jul 24, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic fixed layer with high anisotropy
- Patent number 10,008,663
- Issue date Jun 26, 2018
- Avalanche Technology, Inc.
- Xiaojie Hao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 9,871,191
- Issue date Jan 16, 2018
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with composite fixed layer
- Patent number 9,831,421
- Issue date Nov 28, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number 9,679,625
- Issue date Jun 13, 2017
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with tri-layer reference layer
- Patent number 9,543,506
- Issue date Jan 10, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Unipolar-switching perpendicular MRAM and method for using same
- Patent number 9,502,092
- Issue date Nov 22, 2016
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 9,306,154
- Issue date Apr 5, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 9,082,951
- Issue date Jul 14, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Memory Element Incorporating Perpendicular Enhancement Layer
- Publication number 20200227628
- Publication date Jul 16, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Selector Device Having Asymmetric Conductance for Memory Applications
- Publication number 20180240844
- Publication date Aug 23, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20180076384
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for Sensing Memory Element Coupled to Selector Device
- Publication number 20180075891
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170288137
- Publication date Oct 5, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20160204341
- Publication date Jul 14, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
UNIPOLAR-SWITCHING PERPENDICULAR MRAM AND METHOD FOR USING SAME
- Publication number 20160180908
- Publication date Jun 23, 2016
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO...
- Publication number 20160055893
- Publication date Feb 25, 2016
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150325783
- Publication date Nov 12, 2015
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER
- Publication number 20150311431
- Publication date Oct 29, 2015
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150287908
- Publication date Oct 8, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150171315
- Publication date Jun 18, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS

Xiaojie Hao

Person

Patents Grantslast 30 patents

Magnetic memory element incorporating perpendicular enhancement layer

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Selector device having asymmetric conductance for memory applications

Method for sensing memory element coupled to selector device

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Perpendicular magnetic fixed layer with high anisotropy

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with composite fixed layer

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Magnetic random access memory with tri-layer reference layer

Unipolar-switching perpendicular MRAM and method for using same

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with perpendicular enhancement layer

Patents Applicationslast 30 patents

Magnetic Memory Element Incorporating Perpendicular Enhancement Layer

Selector Device Having Asymmetric Conductance for Memory Applications

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Method for Sensing Memory Element Coupled to Selector Device

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

UNIPOLAR-SWITCHING PERPENDICULAR MRAM AND METHOD FOR USING SAME

PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER