Xiaojun Yu

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Compact model for device/circuit/chip leakage current (IDDQ) calcul...
- Patent number 9,639,652
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor process temperature optimization
- Patent number 9,349,609
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tucked active region without dummy poly for performance boost and v...
- Patent number 9,337,338
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tucked active region without dummy poly for performance boost and v...
- Patent number 9,105,722
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) device having gate s...
- Patent number 9,082,877
- Issue date Jul 14, 2015
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate interconnect for semiconductor device
- Patent number 8,993,389
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tucked active region without dummy poly for performance boost and v...
- Patent number 8,853,035
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS having a sic/sige alloy stack
- Patent number 8,835,234
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) device having gate s...
- Patent number 8,803,243
- Issue date Aug 12, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-gate shallow trench isolation structure formation
- Patent number 8,785,291
- Issue date Jul 22, 2014
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-gate shallow trench isolation structure formation
- Patent number 8,779,469
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intra die variation monitor using through-silicon via
- Patent number 8,754,412
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET including sloped threshold voltage adjusting materia...
- Patent number 8,629,022
- Issue date Jan 14, 2014
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact model for device/circuit/chip leakage current (IDDQ) calcul...
- Patent number 8,626,480
- Issue date Jan 7, 2014
- International Business Machines Corporation
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Polysilicon resistor and E-fuse for integration with metal gate and...
- Patent number 8,481,397
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Roger A. Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS having a SiC/SiGe alloy stack
- Patent number 8,476,706
- Issue date Jul 2, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective partial gate stack for improved device isolation
- Patent number 8,466,496
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET including sloped threshold voltage adjusting materia...
- Patent number 8,445,974
- Issue date May 21, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing threshold voltage adjustment through gate diele...
- Patent number 8,354,309
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment through gate dielectric stack modifica...
- Patent number 8,106,455
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor devices and method of fabricating
- Patent number 7,999,332
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Jun Yuan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Metal gate compatible flash memory gate stack
- Patent number 7,834,387
- Issue date Nov 16, 2010
- International Business Machines Corporation
- Roger A. Booth, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical antifuse having a multi-thickness dielectric layer
- Patent number 7,825,479
- Issue date Nov 2, 2010
- International Business Machines Corporation
- Roger A. Booth, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...
- Publication number 20150349089
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESS TEMPERATURE OPTIMIZATION
- Publication number 20150279692
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...
- Publication number 20150001585
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE HAVING GATE S...
- Publication number 20140349451
- Publication date Nov 27, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE INTERCONNECT FOR SEMICONDUCTOR DEVICE
- Publication number 20140191295
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...
- Publication number 20140123097
- Publication date May 1, 2014
- International Business Machines Corporation
- Paul Chang
- G01 - MEASURING TESTING
Information Patent Application
POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION
- Publication number 20140070274
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS HAVING A SIC/SIGE ALLOY STACK
- Publication number 20130273699
- Publication date Oct 17, 2013
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS HAVING A SIC/SIGE ALLOY STACK
- Publication number 20130168695
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Intra Die Variation Monitor Using Through-Silicon Via
- Publication number 20130168673
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Metal Oxide Semiconductor (CMOS) Device Having Gate S...
- Publication number 20130168776
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE PARTIAL GATE STACK FOR IMPROVED DEVICE ISOLATION
- Publication number 20130126976
- Publication date May 23, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION
- Publication number 20130099281
- Publication date Apr 25, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tucked Active Region Without Dummy Poly For Performance Boost and V...
- Publication number 20130087832
- Publication date Apr 11, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...
- Publication number 20120171831
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...
- Publication number 20120108017
- Publication date May 3, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON RESISTOR AND E-FUSE FOR INTEGRATION WITH METAL GATE AND...
- Publication number 20110215321
- Publication date Sep 8, 2011
- International Business Machines Corporation
- Roger A. Booth, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...
- Publication number 20110163385
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...
- Publication number 20110082680
- Publication date Apr 7, 2011
- International Business Machines Corporation
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Asymmetric Semiconductor Devices and Method of Fabricating
- Publication number 20100289085
- Publication date Nov 18, 2010
- International Business Machines Corporation
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...
- Publication number 20100276753
- Publication date Nov 4, 2010
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL ANTIFUSE HAVING A MULTI-THICKNESS DIELECTRIC LAYER
- Publication number 20100032732
- Publication date Feb 11, 2010
- International Business Machines Corporation
- Roger A. Booth, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE COMPATIBLE FLASH MEMORY GATE STACK
- Publication number 20090256211
- Publication date Oct 15, 2009
- International Business Machines Corporation
- Roger A. Booth, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Compact model for device/circuit/chip leakage current (IDDQ) calcul...

Semiconductor process temperature optimization

Tucked active region without dummy poly for performance boost and v...

Tucked active region without dummy poly for performance boost and v...

Complementary metal oxide semiconductor (CMOS) device having gate s...

Dummy gate interconnect for semiconductor device

Tucked active region without dummy poly for performance boost and v...

MOS having a sic/sige alloy stack

Complementary metal oxide semiconductor (CMOS) device having gate s...

Post-gate shallow trench isolation structure formation

Post-gate shallow trench isolation structure formation

Intra die variation monitor using through-silicon via

Asymmetric FET including sloped threshold voltage adjusting materia...

Compact model for device/circuit/chip leakage current (IDDQ) calcul...

Polysilicon resistor and E-fuse for integration with metal gate and...

CMOS having a SiC/SiGe alloy stack

Selective partial gate stack for improved device isolation

Asymmetric FET including sloped threshold voltage adjusting materia...

Method of providing threshold voltage adjustment through gate diele...

Threshold voltage adjustment through gate dielectric stack modifica...

Asymmetric semiconductor devices and method of fabricating

Metal gate compatible flash memory gate stack

Electrical antifuse having a multi-thickness dielectric layer

Patents Applicationslast 30 patents

TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...

SEMICONDUCTOR PROCESS TEMPERATURE OPTIMIZATION

TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE HAVING GATE S...

DUMMY GATE INTERCONNECT FOR SEMICONDUCTOR DEVICE

COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...

POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION

MOS HAVING A SIC/SIGE ALLOY STACK

CMOS HAVING A SIC/SIGE ALLOY STACK

Intra Die Variation Monitor Using Through-Silicon Via

Complementary Metal Oxide Semiconductor (CMOS) Device Having Gate S...

SELECTIVE PARTIAL GATE STACK FOR IMPROVED DEVICE ISOLATION

POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION

Tucked Active Region Without Dummy Poly For Performance Boost and V...

ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...

THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...

POLYSILICON RESISTOR AND E-FUSE FOR INTEGRATION WITH METAL GATE AND...

ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...

COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...

Asymmetric Semiconductor Devices and Method of Fabricating

Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...

ELECTRICAL ANTIFUSE HAVING A MULTI-THICKNESS DIELECTRIC LAYER

METAL GATE COMPATIBLE FLASH MEMORY GATE STACK