Xiaonan Chen

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Compute-in-memory bitcell with capacitively-coupled write operation
- Patent number 11,631,455
- Issue date Apr 18, 2023
- QUALCOMM Incorporated
- Seyed Arash Mirhaj
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Compute-in-memory (CIM) bit cell circuits each disposed in an orien...
- Patent number 11,626,156
- Issue date Apr 11, 2023
- QUALCOMM Incorporated
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Digital compute-in-memory (DCIM) bit cell circuit layouts and DCIM...
- Patent number 11,581,037
- Issue date Feb 14, 2023
- QUALCOMM Incorporated
- Xiaonan Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory programming methods and memory systems
- Patent number 10,991,427
- Issue date Apr 27, 2021
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated device comprising memory bitcells comprising shared prel...
- Patent number 10,964,380
- Issue date Mar 30, 2021
- QUALCOMM Incorporated
- Zhongze Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric gated fin field effect transistor (FET) (finFET) diodes
- Patent number 10,340,370
- Issue date Jul 2, 2019
- QUALCOMM Incorporated
- Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory programming methods and memory systems
- Patent number 10,304,531
- Issue date May 28, 2019
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Grant
System, apparatus, and method of programming a one-time programmabl...
- Patent number 10,290,352
- Issue date May 14, 2019
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile one-time programmable memory device
- Patent number 9,876,123
- Issue date Jan 23, 2018
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random-access memory (SRAM) sensor for bias temperature inst...
- Patent number 9,812,188
- Issue date Nov 7, 2017
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory programming methods and memory systems
- Patent number 9,773,551
- Issue date Sep 26, 2017
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Grant
High dielectric constant/metal gate (HK/MG) compatible floating gat...
- Patent number 9,576,801
- Issue date Feb 21, 2017
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, and devices, and methods for programming a resistive memor...
- Patent number 9,576,658
- Issue date Feb 21, 2017
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile multiple time programmable memory device
- Patent number 9,508,439
- Issue date Nov 29, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential one-time-programmable (OTP) memory array
- Patent number 9,496,048
- Issue date Nov 15, 2016
- QUALCOMM Incorporated
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Volatile memory and one-time program (OTP) compatible memory cell a...
- Patent number 9,449,709
- Issue date Sep 20, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Volatile/non-volatile SRAM device
- Patent number 9,431,097
- Issue date Aug 30, 2016
- QUALCOMM Incorporated
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory elements, resistive memory cells, and resistive me...
- Patent number 9,419,220
- Issue date Aug 16, 2016
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) s...
- Patent number 9,413,349
- Issue date Aug 9, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, and devices, and methods for programming a resistive memor...
- Patent number 9,281,062
- Issue date Mar 8, 2016
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic high-dielectric-constant (HK) metal-gate (MG) one-time-progra...
- Patent number 9,245,648
- Issue date Jan 26, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory programming methods and memory systems
- Patent number 9,230,685
- Issue date Jan 5, 2016
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Grant
Stabilization of resistive memory
- Patent number 9,224,471
- Issue date Dec 29, 2015
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming resistive memory elements
- Patent number 9,112,138
- Issue date Aug 18, 2015
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performing forming processes on resistive memory
- Patent number 9,001,561
- Issue date Apr 7, 2015
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Stabilization of resistive memory
- Patent number 8,958,233
- Issue date Feb 17, 2015
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, and devices, and methods for programming a resistive memor...
- Patent number 8,787,095
- Issue date Jul 22, 2014
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory programming
- Patent number 8,773,899
- Issue date Jul 8, 2014
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Performing forming processes on resistive memory
- Patent number 8,730,708
- Issue date May 20, 2014
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory programming
- Patent number 8,446,758
- Issue date May 21, 2013
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DIGITAL COMPUTE-IN-MEMORY (DCIM) BIT CELL CIRCUIT LAYOUTS AND DCIM...
- Publication number 20220392524
- Publication date Dec 8, 2022
- QUALCOMM Incorporated
- Xiaonan Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTE-IN-MEMORY BITCELL WITH CAPACITIVELY-COUPLED WRITE OPERATION
- Publication number 20220230679
- Publication date Jul 21, 2022
- QUALCOMM Incorporated
- Seyed Arash MIRHAJ
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTE-IN-MEMORY (CIM) BIT CELL CIRCUITS EACH DISPOSED IN AN ORIEN...
- Publication number 20220172770
- Publication date Jun 2, 2022
- QUALCOMM Incorporated
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL CHARGE SHARING FOR COMPUTE-IN-MEMORY (CIM) CELL
- Publication number 20220108742
- Publication date Apr 7, 2022
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Programming Methods and Memory Systems
- Publication number 20190279713
- Publication date Sep 12, 2019
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM, APPARATUS, AND METHOD OF PROGRAMMING A ONE-TIME PROGRAMMABL...
- Publication number 20190156895
- Publication date May 23, 2019
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC GATED FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) DIODES
- Publication number 20180158935
- Publication date Jun 7, 2018
- QUALCOMM Incorporated
- Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Programming Methods and Memory Systems
- Publication number 20170365339
- Publication date Dec 21, 2017
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL ONE-TIME-PROGRAMMABLE (OTP) MEMORY ARRAY
- Publication number 20160268002
- Publication date Sep 15, 2016
- QUALCOMM Incorporated
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM, APPARATUS, AND METHOD OF PROGRAMMING A ONE-TIME PROGRAMMABL...
- Publication number 20160254056
- Publication date Sep 1, 2016
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
STATIC RANDOM-ACCESS MEMORY (SRAM) SENSOR
- Publication number 20160247554
- Publication date Aug 25, 2016
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMOR...
- Publication number 20160180932
- Publication date Jun 23, 2016
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
VOLATILE/NON-VOLATILE SRAM DEVICE
- Publication number 20160180925
- Publication date Jun 23, 2016
- QUALCOMM Incorporated
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH DIELECTRIC CONSTANT/METAL GATE (HK/MG) COMPATIBLE FLOATING GAT...
- Publication number 20160155748
- Publication date Jun 2, 2016
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Programming Methods and Memory Systems
- Publication number 20160118119
- Publication date Apr 28, 2016
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE ONE-TIME PROGRAMMABLE MEMORY DEVICE
- Publication number 20160020220
- Publication date Jan 21, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MULTIPLE TIME PROGRAMMABLE MEMORY DEVICE
- Publication number 20160012896
- Publication date Jan 14, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ELEMENTS, RESISTIVE MEMORY CELLS, AND RESISTIVE ME...
- Publication number 20150333257
- Publication date Nov 19, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABILIZATION OF RESISTIVE MEMORY
- Publication number 20150138875
- Publication date May 21, 2015
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMOR...
- Publication number 20140328120
- Publication date Nov 6, 2014
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY
- Publication number 20140313814
- Publication date Oct 23, 2014
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Programming Methods And Memory Systems
- Publication number 20140112052
- Publication date Apr 24, 2014
- Micron Technology, Inc.
- Jonathan Strand
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING RESISTIVE MEMORY ELEMENTS AND RELATED RESISTIVE...
- Publication number 20130334483
- Publication date Dec 19, 2013
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY PROGRAMMING
- Publication number 20130258754
- Publication date Oct 3, 2013
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMOR...
- Publication number 20130223163
- Publication date Aug 29, 2013
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY
- Publication number 20130107605
- Publication date May 2, 2013
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
STABILIZATION OF RESISTIVE MEMORY
- Publication number 20130094275
- Publication date Apr 18, 2013
- Micron Technology, Inc.
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY PROGRAMMING
- Publication number 20120147667
- Publication date Jun 14, 2012
- Xiaonan Chen
- G11 - INFORMATION STORAGE

Xiaonan Chen

Person

Patents Grantslast 30 patents

Compute-in-memory bitcell with capacitively-coupled write operation

Compute-in-memory (CIM) bit cell circuits each disposed in an orien...

Digital compute-in-memory (DCIM) bit cell circuit layouts and DCIM...

Memory programming methods and memory systems

Integrated device comprising memory bitcells comprising shared prel...

Asymmetric gated fin field effect transistor (FET) (finFET) diodes

Memory programming methods and memory systems

System, apparatus, and method of programming a one-time programmabl...

Non-volatile one-time programmable memory device

Static random-access memory (SRAM) sensor for bias temperature inst...

Memory programming methods and memory systems

High dielectric constant/metal gate (HK/MG) compatible floating gat...

Systems, and devices, and methods for programming a resistive memor...

Non-volatile multiple time programmable memory device

Differential one-time-programmable (OTP) memory array

Volatile memory and one-time program (OTP) compatible memory cell a...

Volatile/non-volatile SRAM device

Resistive memory elements, resistive memory cells, and resistive me...

High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) s...

Systems, and devices, and methods for programming a resistive memor...

Logic high-dielectric-constant (HK) metal-gate (MG) one-time-progra...

Memory programming methods and memory systems

Stabilization of resistive memory

Methods of forming resistive memory elements

Performing forming processes on resistive memory

Stabilization of resistive memory

Systems, and devices, and methods for programming a resistive memor...

Variable resistance memory programming

Performing forming processes on resistive memory

Variable resistance memory programming

Patents Applicationslast 30 patents

DIGITAL COMPUTE-IN-MEMORY (DCIM) BIT CELL CIRCUIT LAYOUTS AND DCIM...

COMPUTE-IN-MEMORY BITCELL WITH CAPACITIVELY-COUPLED WRITE OPERATION

COMPUTE-IN-MEMORY (CIM) BIT CELL CIRCUITS EACH DISPOSED IN AN ORIEN...

DIFFERENTIAL CHARGE SHARING FOR COMPUTE-IN-MEMORY (CIM) CELL

Memory Programming Methods and Memory Systems

SYSTEM, APPARATUS, AND METHOD OF PROGRAMMING A ONE-TIME PROGRAMMABL...

ASYMMETRIC GATED FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) DIODES

Memory Programming Methods and Memory Systems

DIFFERENTIAL ONE-TIME-PROGRAMMABLE (OTP) MEMORY ARRAY

SYSTEM, APPARATUS, AND METHOD OF PROGRAMMING A ONE-TIME PROGRAMMABL...

STATIC RANDOM-ACCESS MEMORY (SRAM) SENSOR

SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMOR...

VOLATILE/NON-VOLATILE SRAM DEVICE

HIGH DIELECTRIC CONSTANT/METAL GATE (HK/MG) COMPATIBLE FLOATING GAT...

Memory Programming Methods and Memory Systems

NON-VOLATILE ONE-TIME PROGRAMMABLE MEMORY DEVICE

NON-VOLATILE MULTIPLE TIME PROGRAMMABLE MEMORY DEVICE

RESISTIVE MEMORY ELEMENTS, RESISTIVE MEMORY CELLS, AND RESISTIVE ME...

STABILIZATION OF RESISTIVE MEMORY

SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMOR...

PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY

Memory Programming Methods And Memory Systems

METHODS OF FORMING RESISTIVE MEMORY ELEMENTS AND RELATED RESISTIVE...

VARIABLE RESISTANCE MEMORY PROGRAMMING

SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMOR...

PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY

STABILIZATION OF RESISTIVE MEMORY

VARIABLE RESISTANCE MEMORY PROGRAMMING