Xiaoqiu Huang

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Austin, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device including a conductive structure extending throug...
- Patent number 8,188,543
- Issue date May 29, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Todd C. Roggenbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a conductive stru...
- Patent number 7,820,519
- Issue date Oct 26, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Todd C. Roggenbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with channel stress
- Patent number 7,645,651
- Issue date Jan 12, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xiaoqiu Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS WITH CHANNEL STRESS
- Publication number 20090146180
- Publication date Jun 11, 2009
- Xiaoqiu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A CONDUCTIVE STRUCTURE EXTENDING THROUG...
- Publication number 20080122025
- Publication date May 29, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Todd C. Roggenbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A CONDUCTIVE STRU...
- Publication number 20080124889
- Publication date May 29, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Todd C. ROGGENBAUER
- H01 - BASIC ELECTRIC ELEMENTS