Xiaowang DAI

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Staircase etch control in forming three-dimensional memory device
- Patent number 12,142,575
- Issue date Nov 12, 2024
- Yangtza Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,137,558
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,010,838
- Issue date Jun 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,991,880
- Issue date May 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 11,145,666
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 11,133,325
- Issue date Sep 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line contact structure for three-dimensional memory devices an...
- Patent number 11,101,276
- Issue date Aug 24, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact (TAC) for three-dimensional memory devices
- Patent number 10,937,806
- Issue date Mar 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,847,528
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,804,287
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer flatness control using backside compensation structure
- Patent number 10,763,099
- Issue date Sep 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 10,680,003
- Issue date Jun 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line contact structure for three-dimensional memory devices an...
- Patent number 10,672,711
- Issue date Jun 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact (TAC) for three-dimensional memory devices
- Patent number 10,658,378
- Issue date May 19, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,644,015
- Issue date May 5, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase etch control in forming three-dimensional memory device
- Patent number 10,522,474
- Issue date Dec 31, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual-deck channel hole structure of three-dimens...
- Patent number 10,515,975
- Issue date Dec 24, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20250031366
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240292622
- Publication date Aug 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230084008
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230083030
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230070357
- Publication date Mar 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210399001
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210005625
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20200411547
- Publication date Dec 31, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20200295019
- Publication date Sep 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200266211
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qian TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...
- Publication number 20200258837
- Publication date Aug 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243553
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200203285
- Publication date Jun 25, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE
- Publication number 20200058486
- Publication date Feb 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
METHOD FOR FORMING DUAL-DECK CHANNEL HOLE STRUCTURE OF THREE-DIMENS...
- Publication number 20190378849
- Publication date Dec 12, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20190341399
- Publication date Nov 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qian TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...
- Publication number 20190096810
- Publication date Mar 28, 2019
- Yangtze Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190096901
- Publication date Mar 28, 2019
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20190081070
- Publication date Mar 14, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20190074291
- Publication date Mar 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190051610
- Publication date Feb 14, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS

Xiaowang DAI

Person

Patents Grantslast 30 patents

Staircase etch control in forming three-dimensional memory device

Staircase structure for memory device

Memory cell structure of a three-dimensional memory device

Staircase structure for memory device

Three-dimensional memory devices and fabricating methods thereof

Staircase structure for memory device

Memory cell structure of a three-dimensional memory device

Word line contact structure for three-dimensional memory devices an...

Through array contact (TAC) for three-dimensional memory devices

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices and fabricating methods thereof

Wafer flatness control using backside compensation structure

Staircase structure for memory device

Word line contact structure for three-dimensional memory devices an...

Through array contact (TAC) for three-dimensional memory devices

Memory cell structure of a three-dimensional memory device

Staircase etch control in forming three-dimensional memory device

Method for forming dual-deck channel hole structure of three-dimens...

Patents Applicationslast 30 patents

STAIRCASE STRUCTURE FOR MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

STAIRCASE STRUCTURE FOR MEMORY DEVICE

THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES

WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE

WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE

METHOD FOR FORMING DUAL-DECK CHANNEL HOLE STRUCTURE OF THREE-DIMENS...

THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES

WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE