Xiaowei Deng

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Sense amplifier look-through latch for FAMOS-based EPROM
- Patent number 11,495,301
- Issue date Nov 8, 2022
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Array power supply-based screening of static random access memory c...
- Patent number 11,355,182
- Issue date Jun 7, 2022
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Array power supply-based screening of static random access memory c...
- Patent number 9,805,788
- Issue date Oct 31, 2017
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Array power supply-based screening of static random access memory c...
- Patent number 9,576,643
- Issue date Feb 21, 2017
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM with buffered-read bit cells and its testing
- Patent number 9,472,268
- Issue date Oct 18, 2016
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Array power supply-based screening of static random access memory c...
- Patent number 9,466,356
- Issue date Oct 11, 2016
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Array power supply-based screening of static random access memory c...
- Patent number 9,455,021
- Issue date Sep 27, 2016
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM with buffered-read bit cells and its testing
- Patent number 9,412,437
- Issue date Aug 9, 2016
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Universal test structures based SRAM on-chip parametric test module...
- Patent number 9,208,899
- Issue date Dec 8, 2015
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Bitline leakage detection in memories
- Patent number 9,208,902
- Issue date Dec 8, 2015
- Texas Instruments Incorporated
- Beena Pious
- G11 - INFORMATION STORAGE
Information Patent Grant
Functional screening of static random access memories using an arra...
- Patent number 9,208,832
- Issue date Dec 8, 2015
- Texas Insturments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Efficient static random-access memory layout
- Patent number 8,760,927
- Issue date Jun 24, 2014
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random-access memory cell array with deep well regions
- Patent number 8,716,808
- Issue date May 6, 2014
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing power in SRAM using supply voltage control
- Patent number 8,670,265
- Issue date Mar 11, 2014
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random access memory cell with single-sided buffer and asymm...
- Patent number 8,654,562
- Issue date Feb 18, 2014
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Disturb-free static random access memory cell
- Patent number 8,654,575
- Issue date Feb 18, 2014
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Solid-state memory cell with improved read stability
- Patent number 8,498,143
- Issue date Jul 30, 2013
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Array-based integrated circuit with reduced proximity effects
- Patent number 8,472,229
- Issue date Jun 25, 2013
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Array-based integrated circuit with reduced proximity effects
- Patent number 8,472,228
- Issue date Jun 25, 2013
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit-by-bit write assist for solid-state memory
- Patent number 8,462,542
- Issue date Jun 11, 2013
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Characterization of bits in a functional memory
- Patent number 8,437,213
- Issue date May 7, 2013
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of screening static random access memories for unstable memo...
- Patent number 8,432,760
- Issue date Apr 30, 2013
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and methods for measuring margins in an SRAM bit
- Patent number 8,379,467
- Issue date Feb 19, 2013
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with equalization write assist in solid-state memory
- Patent number 8,305,798
- Issue date Nov 6, 2012
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and structure for SRAM cell trip voltage measurement
- Patent number 8,233,341
- Issue date Jul 31, 2012
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Margin testing of static random access memory cells
- Patent number 8,228,749
- Issue date Jul 24, 2012
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and structure for SRAM Vmin/Vmax measurement
- Patent number 8,174,914
- Issue date May 8, 2012
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and methods for measuring margins in an SRAM bit
- Patent number 8,139,431
- Issue date Mar 20, 2012
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method for screening SRAMS
- Patent number 8,064,279
- Issue date Nov 22, 2011
- Texas Instruments Incorporated
- Theodore W. Houston
- G11 - INFORMATION STORAGE
Information Patent Grant
Universal structure for memory cell characterization
- Patent number 7,936,623
- Issue date May 3, 2011
- Texas Instruments Incorporated
- Xiaowei Deng
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SENSE AMPLIFIER LOOK-THROUGH LATCH FOR FAMOS-BASED EPROM
- Publication number 20210304824
- Publication date Sep 30, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Array Power Supply-Based Screening of Static Random Access Memory C...
- Publication number 20180068713
- Publication date Mar 8, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Array Power Supply-Based Screening of Static Random Access Memory C...
- Publication number 20150348615
- Publication date Dec 3, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Array Power Supply-Based Screening of Static Random Access Memory C...
- Publication number 20150340084
- Publication date Nov 26, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Array Power Supply-Based Screening of Static Random Access Memory C...
- Publication number 20150340081
- Publication date Nov 26, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM WITH BUFFERED-READ BIT CELLS AND ITS TESTING
- Publication number 20140126277
- Publication date May 8, 2014
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
STATIC RANDOM ACCESS MEMORY CELL WITH SINGLE-SIDED BUFFER AND ASYMM...
- Publication number 20140078819
- Publication date Mar 20, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM WITH BUFFERED-READ BIT CELLS AND ITS TESTING
- Publication number 20130343136
- Publication date Dec 26, 2013
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Static Random-Access Memory Cell Array with Deep Well Regions
- Publication number 20130320458
- Publication date Dec 5, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING POWER IN SRAM USING SUPPLY VOLTAGE CONTROL
- Publication number 20130294149
- Publication date Nov 7, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Efficient Static Random-Access Memory Layout
- Publication number 20130182495
- Publication date Jul 18, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Static Random Access Memory Cell with Single-Sided Buffer and Asymm...
- Publication number 20130182490
- Publication date Jul 18, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Electrical Screening of Static Random Access Memories at Varying Lo...
- Publication number 20130176772
- Publication date Jul 11, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
DISTURB-FREE STATIC RANDOM ACCESS MEMORY CELL
- Publication number 20130064007
- Publication date Mar 14, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
ARRAY-BASED INTEGRATED CIRCUIT WITH REDUCED PROXIMITY EFFECTS
- Publication number 20130044536
- Publication date Feb 21, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Screening Static Random Access Memories for Unstable Memo...
- Publication number 20130028036
- Publication date Jan 31, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Array Power Supply-Based Screening of Static Random Access Memory C...
- Publication number 20130021864
- Publication date Jan 24, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Solid-State Memory Cell with Improved Read Stability
- Publication number 20120224414
- Publication date Sep 6, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Array-Based Integrated Circuit with Reduced Proximity Effects
- Publication number 20120106225
- Publication date May 3, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Disturb-Free Static Random Access Memory Cell
- Publication number 20120014173
- Publication date Jan 19, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell with Equalization Write Assist in Solid-State Memory
- Publication number 20120014194
- Publication date Jan 19, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM with buffered-read bit cells and its testing
- Publication number 20120014195
- Publication date Jan 19, 2012
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Bit-by-Bit Write Assist for Solid-State Memory
- Publication number 20110317476
- Publication date Dec 29, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Margin Testing of Static Random Access Memory Cells
- Publication number 20110299349
- Publication date Dec 8, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
UNIVERSAL TEST STRUCTURES BASED SRAM ON-CHIP PARAMETRIC TEST MODULE...
- Publication number 20110273946
- Publication date Nov 10, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
UNIVERSAL STRUCTURE FOR MEMORY CELL CHARACTERIZATION
- Publication number 20110199806
- Publication date Aug 18, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MEMORY CELL CHARACTERIZATION USING UNIVERSAL STRUCTURE
- Publication number 20110158017
- Publication date Jun 30, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Structure and Methods for Measuring Margins in an SRAM Bit
- Publication number 20110158018
- Publication date Jun 30, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Method and structure for SRAM VMIN/VMAX measurement
- Publication number 20110051539
- Publication date Mar 3, 2011
- Xiaowei Deng
- G11 - INFORMATION STORAGE
Information Patent Application
Method and structure for SRAM cell trip voltage measurement
- Publication number 20110051540
- Publication date Mar 3, 2011
- Xiaowei Deng
- G11 - INFORMATION STORAGE

Xiaowei Deng

Person

Patents Grantslast 30 patents

Sense amplifier look-through latch for FAMOS-based EPROM

Array power supply-based screening of static random access memory c...

Array power supply-based screening of static random access memory c...

Array power supply-based screening of static random access memory c...

SRAM with buffered-read bit cells and its testing

Array power supply-based screening of static random access memory c...

Array power supply-based screening of static random access memory c...

SRAM with buffered-read bit cells and its testing

Universal test structures based SRAM on-chip parametric test module...

Bitline leakage detection in memories

Functional screening of static random access memories using an arra...

Efficient static random-access memory layout

Static random-access memory cell array with deep well regions

Reducing power in SRAM using supply voltage control

Static random access memory cell with single-sided buffer and asymm...

Disturb-free static random access memory cell

Solid-state memory cell with improved read stability

Array-based integrated circuit with reduced proximity effects

Array-based integrated circuit with reduced proximity effects

Bit-by-bit write assist for solid-state memory

Characterization of bits in a functional memory

Method of screening static random access memories for unstable memo...

Structure and methods for measuring margins in an SRAM bit

Memory cell with equalization write assist in solid-state memory

Method and structure for SRAM cell trip voltage measurement

Margin testing of static random access memory cells

Method and structure for SRAM Vmin/Vmax measurement

Structure and methods for measuring margins in an SRAM bit

Structure and method for screening SRAMS

Universal structure for memory cell characterization

Patents Applicationslast 30 patents

SENSE AMPLIFIER LOOK-THROUGH LATCH FOR FAMOS-BASED EPROM

Array Power Supply-Based Screening of Static Random Access Memory C...

Array Power Supply-Based Screening of Static Random Access Memory C...

Array Power Supply-Based Screening of Static Random Access Memory C...

Array Power Supply-Based Screening of Static Random Access Memory C...

SRAM WITH BUFFERED-READ BIT CELLS AND ITS TESTING

STATIC RANDOM ACCESS MEMORY CELL WITH SINGLE-SIDED BUFFER AND ASYMM...

SRAM WITH BUFFERED-READ BIT CELLS AND ITS TESTING

Static Random-Access Memory Cell Array with Deep Well Regions

REDUCING POWER IN SRAM USING SUPPLY VOLTAGE CONTROL

Efficient Static Random-Access Memory Layout

Static Random Access Memory Cell with Single-Sided Buffer and Asymm...

Electrical Screening of Static Random Access Memories at Varying Lo...

DISTURB-FREE STATIC RANDOM ACCESS MEMORY CELL

ARRAY-BASED INTEGRATED CIRCUIT WITH REDUCED PROXIMITY EFFECTS

Method of Screening Static Random Access Memories for Unstable Memo...

Array Power Supply-Based Screening of Static Random Access Memory C...

Solid-State Memory Cell with Improved Read Stability

Array-Based Integrated Circuit with Reduced Proximity Effects

Disturb-Free Static Random Access Memory Cell

Memory Cell with Equalization Write Assist in Solid-State Memory

SRAM with buffered-read bit cells and its testing

Bit-by-Bit Write Assist for Solid-State Memory

Margin Testing of Static Random Access Memory Cells

UNIVERSAL TEST STRUCTURES BASED SRAM ON-CHIP PARAMETRIC TEST MODULE...

UNIVERSAL STRUCTURE FOR MEMORY CELL CHARACTERIZATION

METHOD FOR MEMORY CELL CHARACTERIZATION USING UNIVERSAL STRUCTURE

Structure and Methods for Measuring Margins in an SRAM Bit

Method and structure for SRAM VMIN/VMAX measurement

Method and structure for SRAM cell trip voltage measurement