XIAOWEI LI

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Patents Grantslast 30 patents

Information Patent Grant
Independent radiant gas preheating for precursor disassociation con...
- Patent number 8,663,390
- Issue date Mar 4, 2014
- Applied Materials, Inc.
- David Keith Carlson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of CL2 and/or HCL during silicon epitaxial film formation
- Patent number 8,586,456
- Issue date Nov 19, 2013
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent radiant gas preheating for precursor disassociation con...
- Patent number 7,976,634
- Issue date Jul 12, 2011
- Applied Materials, Inc.
- David Keith Carlson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of CL2 and/or HCL during silicon epitaxial film formation
- Patent number 7,960,256
- Issue date Jun 14, 2011
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of Cl2 and/or HCl during silicon epitaxial film formation
- Patent number 7,732,305
- Issue date Jun 8, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of Cl2 and/or HCl during silicon epitaxial film formation
- Patent number 7,682,940
- Issue date Mar 23, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CON...
- Publication number 20170362702
- Publication date Dec 21, 2017
- Applied Materials, Inc.
- David Keith CARLSON
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CON...
- Publication number 20140175054
- Publication date Jun 26, 2014
- Applied Materials, Inc.
- David Keith CARLSON
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CON...
- Publication number 20110259432
- Publication date Oct 27, 2011
- David Keith Carlson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION
- Publication number 20110230036
- Publication date Sep 22, 2011
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION
- Publication number 20100221902
- Publication date Sep 2, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Independent Radiant Gas Preheating for Precursor Disassociation Con...
- Publication number 20080210163
- Publication date Sep 4, 2008
- David Keith Carlson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Use of Cl2 and/or HCl during silicon epitaxial film formation
- Publication number 20060260538
- Publication date Nov 23, 2006
- APPLIED MATERIALS, INC.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of CL2 and/or HCL during silicon epitaxial film formation
- Publication number 20060115933
- Publication date Jun 1, 2006
- APPLIED MATERIALS, INC.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Independent radiant gas preheating for precursor disassociation con...

Use of CL2 and/or HCL during silicon epitaxial film formation

Independent radiant gas preheating for precursor disassociation con...

Use of CL2 and/or HCL during silicon epitaxial film formation

Use of Cl2 and/or HCl during silicon epitaxial film formation

Use of Cl2 and/or HCl during silicon epitaxial film formation

Patents Applicationslast 30 patents

INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CON...

INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CON...

INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CON...

USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION

USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION

Independent Radiant Gas Preheating for Precursor Disassociation Con...

Use of Cl2 and/or HCl during silicon epitaxial film formation

Use of CL2 and/or HCL during silicon epitaxial film formation