Xiaowei Ren

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Laterally diffused metal oxide semiconductor transistors for radio...
- Patent number 10,319,815
- Issue date Jun 11, 2019
- NXP USA, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic microwave integrated circuits
- Patent number 9,871,008
- Issue date Jan 16, 2018
- NXP USA, INC.
- Paul W. Sanders
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Methods of making a monolithic microwave integrated circuit
- Patent number 9,508,599
- Issue date Nov 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Paul W. Sanders
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
LDMOS minority carrier shunting
- Patent number 9,123,804
- Issue date Sep 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Monolithic microwave integrated circuit
- Patent number 9,064,712
- Issue date Jun 23, 2015
- Freescale Semiconductor Inc.
- Paul W. Sanders
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated circuits including integrated passive devices and method...
- Patent number 8,906,773
- Issue date Dec 9, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with minority carrier shunt region
- Patent number 8,772,870
- Issue date Jul 8, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Methods of forming laterally diffused metal oxide semiconductor tra...
- Patent number 8,753,948
- Issue date Jun 17, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low loss substrate for integrated passive devices
- Patent number 8,283,748
- Issue date Oct 9, 2012
- Freescale Semiconductors, Inc.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic elements and devices with trench under bond pad feature
- Patent number 8,134,241
- Issue date Mar 13, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jeffrey K. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low loss substrate for integrated passive devices
- Patent number 8,071,461
- Issue date Dec 6, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming an RF device with trench under bond pad feature
- Patent number 7,998,852
- Issue date Aug 16, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Jeffrey K. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF power transistor with large periphery metal-insulator-silicon sh...
- Patent number 7,589,370
- Issue date Sep 15, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Daniel J. Lamey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF power transistor device with high performance shunt capacitor an...
- Patent number 7,508,021
- Issue date Mar 24, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground shields for semiconductors
- Patent number 7,368,668
- Issue date May 6, 2008
- Freescale Semiconductor Inc.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS
- Publication number 20170077051
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- PAUL W. SANDERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING A MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
- Publication number 20150228545
- Publication date Aug 13, 2015
- FREESCALE SEMICONDUCTOR, INC.
- PAUL W. SANDERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH MINORITY CARRIER SHUNT REGION
- Publication number 20140284716
- Publication date Sep 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTORS FOR RADIO...
- Publication number 20140252467
- Publication date Sep 11, 2014
- FREESCALE SEMICONDUCTOR, INC.
- XIAOWEI REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING INTEGRATED PASSIVE DEVICES AND METHOD...
- Publication number 20140159198
- Publication date Jun 12, 2014
- XIAOWEI REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Device with Minority Carrier Shunt Region
- Publication number 20140117446
- Publication date May 1, 2014
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RADIO F...
- Publication number 20130105892
- Publication date May 2, 2013
- XIAOWEI REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
- Publication number 20120037969
- Publication date Feb 16, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Paul W. Sanders
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
LOW LOSS SUBSTRATE FOR INTEGRATED PASSIVE DEVICES
- Publication number 20120038023
- Publication date Feb 16, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC ELEMENTS AND DEVICES WITH TRENCH UNDER BOND PAD FEATURE
- Publication number 20110266687
- Publication date Nov 3, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Jeffrey K. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF DEVICE AND METHOD WITH TRENCH UNDER BOND PAD FEATURE
- Publication number 20100140814
- Publication date Jun 10, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Jeffrey K. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LOSS SUBSTRATE FOR INTEGRATED PASSIVE DEVICES
- Publication number 20100140714
- Publication date Jun 10, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF POWER TRANSISTOR WITH LARGE PERIPHERY METAL-INSULATOR-SILICON SH...
- Publication number 20080149981
- Publication date Jun 26, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Daniel J. Lamey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF POWER TRANSISTOR DEVICE WITH HIGH PERFORMANCE SHUNT CAPACITOR AN...
- Publication number 20070297120
- Publication date Dec 27, 2007
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an active semiconductor device over a passive dev...
- Publication number 20070232011
- Publication date Oct 4, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Bishnu P. Gogoi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ground shields for semiconductors
- Publication number 20070181339
- Publication date Aug 9, 2007
- Xiaowei Ren
- H01 - BASIC ELECTRIC ELEMENTS

Xiaowei Ren

Person

Patents Grantslast 30 patents

Laterally diffused metal oxide semiconductor transistors for radio...

Monolithic microwave integrated circuits

Methods of making a monolithic microwave integrated circuit

LDMOS minority carrier shunting

Monolithic microwave integrated circuit

Integrated circuits including integrated passive devices and method...

LDMOS device with minority carrier shunt region

Methods of forming laterally diffused metal oxide semiconductor tra...

Low loss substrate for integrated passive devices

Electronic elements and devices with trench under bond pad feature

Low loss substrate for integrated passive devices

Methods for forming an RF device with trench under bond pad feature

RF power transistor with large periphery metal-insulator-silicon sh...

RF power transistor device with high performance shunt capacitor an...

Ground shields for semiconductors

Patents Applicationslast 30 patents

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS

METHODS OF MAKING A MONOLITHIC MICROWAVE INTEGRATED CIRCUIT

LDMOS DEVICE WITH MINORITY CARRIER SHUNT REGION

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTORS FOR RADIO...

INTEGRATED CIRCUITS INCLUDING INTEGRATED PASSIVE DEVICES AND METHOD...

LDMOS Device with Minority Carrier Shunt Region

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RADIO F...

MONOLITHIC MICROWAVE INTEGRATED CIRCUIT

LOW LOSS SUBSTRATE FOR INTEGRATED PASSIVE DEVICES

ELECTRONIC ELEMENTS AND DEVICES WITH TRENCH UNDER BOND PAD FEATURE

RF DEVICE AND METHOD WITH TRENCH UNDER BOND PAD FEATURE

LOW LOSS SUBSTRATE FOR INTEGRATED PASSIVE DEVICES

RF POWER TRANSISTOR WITH LARGE PERIPHERY METAL-INSULATOR-SILICON SH...

RF POWER TRANSISTOR DEVICE WITH HIGH PERFORMANCE SHUNT CAPACITOR AN...

Method of forming an active semiconductor device over a passive dev...

Ground shields for semiconductors