Xiaoyu Che

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Foggy-fine drain-side select gate re-program for on-pitch semi-circ...
- Patent number 12,142,323
- Issue date Nov 12, 2024
- SanDisk Technologies LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Grant
Utilizing data pattern effect to control read clock timing and bit...
- Patent number 11,887,674
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory programming with selectively skipped verify pulses for perfo...
- Patent number 11,605,437
- Issue date Mar 14, 2023
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT
- Publication number 20240386973
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...
- Publication number 20240290390
- Publication date Aug 29, 2024
- Western Digital Technologies, Inc.
- Yanjie Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FOGGY-FINE DRAIN-SIDE SELECT GATE RE-PROGRAM FOR ON-PITCH SEMI-CIRC...
- Publication number 20240079061
- Publication date Mar 7, 2024
- SANDISK TECHNOLOGIES LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE NEGATIVE WORD LINE VOLTAGE
- Publication number 20240071527
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TECHNIQUES TO REDUCE PROGRAMMING STRESS IN A MEMORY DEVICE
- Publication number 20230317170
- Publication date Oct 5, 2023
- SANDISK TECHNOLOGIES LLC
- Xiaoyu Che
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZING DATA PATTERN EFFECT TO CONTROL READ CLOCK TIMING AND BIT...
- Publication number 20230317174
- Publication date Oct 5, 2023
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED VERIFY PULSES FOR PERFO...
- Publication number 20220415417
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Foggy-fine drain-side select gate re-program for on-pitch semi-circ...

Utilizing data pattern effect to control read clock timing and bit...

Memory programming with selectively skipped verify pulses for perfo...

Patents Applicationslast 30 patents

HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT

PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...

FOGGY-FINE DRAIN-SIDE SELECT GATE RE-PROGRAM FOR ON-PITCH SEMI-CIRC...

ADAPTIVE NEGATIVE WORD LINE VOLTAGE

PROGRAMMING TECHNIQUES TO REDUCE PROGRAMMING STRESS IN A MEMORY DEVICE

UTILIZING DATA PATTERN EFFECT TO CONTROL READ CLOCK TIMING AND BIT...

MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED VERIFY PULSES FOR PERFO...