Xin Lin

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor with an electrode well
- Patent number 11,695,013
- Issue date Jul 4, 2023
- NXP USA, INC.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with an improved breakdown performance
- Patent number 11,610,978
- Issue date Mar 21, 2023
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for extension of operation voltage
- Patent number 11,404,539
- Issue date Aug 2, 2022
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with diode coupled isolation ring
- Patent number 11,127,856
- Issue date Sep 21, 2021
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench and junction hybrid isolation
- Patent number 10,944,001
- Issue date Mar 9, 2021
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making high voltage transistors insensitive to needle de...
- Patent number 10,825,717
- Issue date Nov 3, 2020
- NXP B.V.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drain active area
- Patent number 10,672,903
- Issue date Jun 2, 2020
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconducting devices with lightly-...
- Patent number 10,418,483
- Issue date Sep 17, 2019
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor device
- Patent number 10,297,676
- Issue date May 21, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,217,860
- Issue date Feb 26, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,186,612
- Issue date Jan 22, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device isolation with RESURF layer arrangement
- Patent number 10,177,252
- Issue date Jan 8, 2019
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device isolation via depleted coupling layer
- Patent number 9,941,350
- Issue date Apr 10, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making
- Patent number 9,905,687
- Issue date Feb 27, 2018
- NXP USA, INC.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a tunable schottky diode with depleted conduc...
- Patent number 9,899,500
- Issue date Feb 20, 2018
- NXP USA, INC.
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device fabrication methods
- Patent number 9,893,164
- Issue date Feb 13, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making
- Patent number 9,871,135
- Issue date Jan 16, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating source region arrangement
- Patent number 9,831,338
- Issue date Nov 28, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial, self-biased isolation in semiconductor devices
- Patent number 9,825,169
- Issue date Nov 21, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused MOSFET with isolation region
- Patent number 9,761,707
- Issue date Sep 12, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 9,728,600
- Issue date Aug 8, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with enhanced 3D resurf
- Patent number 9,691,880
- Issue date Jun 27, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-adjusted isolation bias in semiconductor devices
- Patent number 9,680,011
- Issue date Jun 13, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diodes with multiple junctions
- Patent number 9,647,082
- Issue date May 9, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial, self-biased isolation in semiconductor devices
- Patent number 9,614,074
- Issue date Apr 4, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related fabrication methods
- Patent number 9,590,097
- Issue date Mar 7, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with peripheral breakdown protection
- Patent number 9,543,379
- Issue date Jan 10, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diodes with multiple junctions
- Patent number 9,543,454
- Issue date Jan 10, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with high-potential-biased isolation ring
- Patent number 9,508,845
- Issue date Nov 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resurf high voltage diode
- Patent number 9,496,333
- Issue date Nov 15, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPACITOR WITH AN ELECTRODE WELL
- Publication number 20230138580
- Publication date May 4, 2023
- NXP USA, Inc.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS With An Improved Breakdown Performance
- Publication number 20220293771
- Publication date Sep 15, 2022
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for Extension of Operation Voltage
- Publication number 20220069077
- Publication date Mar 3, 2022
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH DIODE COUPLED ISOLATION RING
- Publication number 20200328304
- Publication date Oct 15, 2020
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DRAIN ACTIVE AREA
- Publication number 20200035827
- Publication date Jan 30, 2020
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...
- Publication number 20180151723
- Publication date May 31, 2018
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT
- Publication number 20180130903
- Publication date May 10, 2018
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20170352756
- Publication date Dec 7, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL, SELF-BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170179279
- Publication date Jun 22, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES
- Publication number 20170125584
- Publication date May 4, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH MULTIPLE JUNCTIONS
- Publication number 20170084715
- Publication date Mar 23, 2017
- NXP USA, Inc.
- XIN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077295
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077219
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICE
- Publication number 20170077296
- Publication date Mar 16, 2017
- NXP USA, Inc.
- Hongning YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF
- Publication number 20170053999
- Publication date Feb 23, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS
- Publication number 20160181421
- Publication date Jun 23, 2016
- Freescale Semiconductor Inc.
- HONGNING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20160087096
- Publication date Mar 24, 2016
- HONGNING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF DIAGNOSING AND TREATING FIBROSIS
- Publication number 20160025745
- Publication date Jan 28, 2016
- University of Rochester
- Jia Guo
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Application
BIPOLAR TRANSISTOR DEVICE FABRICATION METHODS
- Publication number 20150380513
- Publication date Dec 31, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Diodes with Multiple Junctions
- Publication number 20150325674
- Publication date Nov 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Semiconductor Device with Multiple Threshold Voltages
- Publication number 20150325565
- Publication date Nov 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Peripheral Breakdown Protection
- Publication number 20150270333
- Publication date Sep 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Diode
- Publication number 20150228713
- Publication date Aug 13, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZENER DIODE DEVICES AND RELATED FABRICATION METHODS
- Publication number 20150162417
- Publication date Jun 11, 2015
- WEIZE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resurf High Voltage Diode
- Publication number 20150155350
- Publication date Jun 4, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diodes with Multiple Junctions and Fabrication Methods Therefor
- Publication number 20150123236
- Publication date May 7, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20150104920
- Publication date Apr 16, 2015
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Buried Conduction Path
- Publication number 20150097265
- Publication date Apr 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES
- Publication number 20150004768
- Publication date Jan 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING IMPROVED BIPOLAR TRANSISTORS
- Publication number 20140363945
- Publication date Dec 11, 2014
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Capacitor with an electrode well

LDMOS with an improved breakdown performance

Apparatus for extension of operation voltage

LDMOS with diode coupled isolation ring

Deep trench and junction hybrid isolation

Method for making high voltage transistors insensitive to needle de...

Semiconductor device with drain active area

Laterally diffused metal oxide semiconducting devices with lightly-...

Partially biased isolation in semiconductor device

Partially biased isolation in semiconductor devices

Partially biased isolation in semiconductor devices

Semiconductor device isolation with RESURF layer arrangement

Semiconductor device isolation via depleted coupling layer

Semiconductor device and method of making

Method of fabricating a tunable schottky diode with depleted conduc...

Bipolar transistor device fabrication methods

Semiconductor device and method of making

Alternating source region arrangement

Partial, self-biased isolation in semiconductor devices

Laterally diffused MOSFET with isolation region

Partially biased isolation in semiconductor devices

Semiconductor device with enhanced 3D resurf

Self-adjusted isolation bias in semiconductor devices

Diodes with multiple junctions

Partial, self-biased isolation in semiconductor devices

Semiconductor devices and related fabrication methods

Semiconductor device with peripheral breakdown protection

Diodes with multiple junctions

LDMOS device with high-potential-biased isolation ring

Resurf high voltage diode

Patents Applicationslast 30 patents

CAPACITOR WITH AN ELECTRODE WELL

LDMOS With An Improved Breakdown Performance

Apparatus for Extension of Operation Voltage

LDMOS WITH DIODE COUPLED ISOLATION RING

SEMICONDUCTOR DEVICE WITH DRAIN ACTIVE AREA

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...

SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

PARTIAL, SELF-BIASED ISOLATION IN SEMICONDUCTOR DEVICES

SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES

DIODES WITH MULTIPLE JUNCTIONS

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF

SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

METHODS OF DIAGNOSING AND TREATING FIBROSIS

BIPOLAR TRANSISTOR DEVICE FABRICATION METHODS

Methods of Fabricating Diodes with Multiple Junctions

Composite Semiconductor Device with Multiple Threshold Voltages

Semiconductor Device with Peripheral Breakdown Protection

High Voltage Diode

ZENER DIODE DEVICES AND RELATED FABRICATION METHODS

Resurf High Voltage Diode

Diodes with Multiple Junctions and Fabrication Methods Therefor

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

Semiconductor Device with Buried Conduction Path

DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES

METHODS FOR FABRICATING IMPROVED BIPOLAR TRANSISTORS