Xing Yu

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming MOSFET device having source/drain extension regi...
- Patent number 6,455,384
- Issue date Sep 24, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to fabricate a source-drain extension
- Patent number 6,376,319
- Issue date Apr 23, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to fabricate a novel source-drain extension
- Patent number 6,319,783
- Issue date Nov 20, 2001
- Chartered Semiconductor Manufatcuring Ltd.
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate and double poly capacitor analog process integration
- Patent number 6,218,234
- Issue date Apr 17, 2001
- Chartered Semiconductor Manufacturing, Ltd.
- Xing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a raised source/drain transistor
- Patent number 6,100,161
- Issue date Aug 8, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Xing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form CoSi.sub.2 on shallow junction by Si implantation
- Patent number 6,096,647
- Issue date Aug 1, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a raised source and drain without using selectiv...
- Patent number 6,090,691
- Issue date Jul 18, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Process to fabricate a novel source-drain extension
- Publication number 20020019102
- Publication date Feb 14, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Ting Cheng Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to fabricate a novel source-drain extension
- Publication number 20020013032
- Publication date Jan 31, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for forming MOSFET device having source/drain extension regi...

Process to fabricate a source-drain extension

Process to fabricate a novel source-drain extension

Dual gate and double poly capacitor analog process integration

Method of fabrication of a raised source/drain transistor

Method to form CoSi.sub.2 on shallow junction by Si implantation

Method for forming a raised source and drain without using selectiv...

Patents Applicationslast 30 patents

Process to fabricate a novel source-drain extension

Process to fabricate a novel source-drain extension