Xing ZHANG

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High step coverage tungsten deposition
- Patent number 12,002,679
- Issue date Jun 4, 2024
- Lam Research Corporation
- Michael Bowes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with a wrap-around silicide source/drain contact stru...
- Patent number 10,700,173
- Issue date Jun 30, 2020
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce FinFET short channel gate height
- Patent number 10,643,900
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for threshold voltage control in FinF...
- Patent number 10,325,824
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with uniform gate heights
- Patent number 10,083,873
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Xing Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce FinFET short channel gate height
- Patent number 10,043,713
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with coplanar recessed gate layers and fab...
- Patent number 9,252,238
- Issue date Feb 2, 2016
- Lam Research Corporation
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform gate height for semiconductor structure with N and P type fins
- Patent number 8,987,083
- Issue date Mar 24, 2015
- GLOBALFOUNDRIES Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REACTANT GAS PULSE DELIVERY
- Publication number 20230130557
- Publication date Apr 27, 2023
- LAM RESEARCH CORPORATION
- Krishna BIRRU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH STEP COVERAGE TUNGSTEN DEPOSITION
- Publication number 20220181158
- Publication date Jun 9, 2022
- LAM RESEARCH CORPORATION
- Michael Bowes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...
- Publication number 20190312117
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR THRESHOLD VOLTAGE CONTROL IN FINF...
- Publication number 20180358272
- Publication date Dec 13, 2018
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE FINFET SHORT CHANNEL GATE HEIGHT
- Publication number 20180330995
- Publication date Nov 15, 2018
- GLOBALFOUNDRIES INC.
- Xinyuan DOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...
- Publication number 20160049495
- Publication date Feb 18, 2016
- LAM RESEARCH CORPORATION
- Kristina TREVINO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High step coverage tungsten deposition

FinFET device with a wrap-around silicide source/drain contact stru...

Method to reduce FinFET short channel gate height

Methods, apparatus and system for threshold voltage control in FinF...

Semiconductor structure with uniform gate heights

Method to reduce FinFET short channel gate height

Semiconductor structures with coplanar recessed gate layers and fab...

Uniform gate height for semiconductor structure with N and P type fins

Patents Applicationslast 30 patents

REACTANT GAS PULSE DELIVERY

HIGH STEP COVERAGE TUNGSTEN DEPOSITION

FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...

METHODS, APPARATUS AND SYSTEM FOR THRESHOLD VOLTAGE CONTROL IN FINF...

METHOD TO REDUCE FINFET SHORT CHANNEL GATE HEIGHT

SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...