Xinyuan Dou

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
STI structure with liner along lower portion of longitudinal sides...
- Patent number 10,910,276
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure to reduce soft-fail incidence and meth...
- Patent number 10,818,557
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming smooth sidewall structures using spacer materials
- Patent number 10,714,380
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Ravi P. Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce FinFET short channel gate height
- Patent number 10,643,900
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form high performance fin profile for 12LP and above
- Patent number 10,580,857
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES, INC.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective shallow trench isolation (STI) fill for stress engineerin...
- Patent number 10,522,679
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of the line (MOL) contact formation method and structure
- Patent number 10,347,531
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for fabricating finFET devices with...
- Patent number 10,153,211
- Issue date Dec 11, 2018
- GLOBALFOUNDRIES Inc.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including single diffusion break and e...
- Patent number 10,090,382
- Issue date Oct 2, 2018
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with uniform gate heights
- Patent number 10,083,873
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Xing Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming short channel and long channel finFET devices so...
- Patent number 10,074,732
- Issue date Sep 11, 2018
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce FinFET short channel gate height
- Patent number 10,043,713
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistors with single-diffusion breaks and...
- Patent number 10,014,296
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits using flowable chemical...
- Patent number 9,831,098
- Issue date Nov 28, 2017
- GLOBALFOUNDRIES, INC.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE CAPPING LAYERS OF SEMICONDUCTOR DEVICES
- Publication number 20200388693
- Publication date Dec 10, 2020
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMOOTH SIDEWALL STRUCTURES
- Publication number 20200135545
- Publication date Apr 30, 2020
- GLOBALFOUNDRIES INC.
- Ravi P. SRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE TO REDUCE SOFT-FAIL INCIDENCE AND METH...
- Publication number 20200013678
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO FORM HIGH PERFORMANCE FIN PROFILE FOR 12LP AND ABOVE
- Publication number 20190386100
- Publication date Dec 19, 2019
- GLOBALFOUNDRIES, Inc.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SHALLOW TRENCH ISOLATION (STI) FILL FOR STRESS ENGINEERIN...
- Publication number 20190131452
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Ashish Kumar JHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR FABRICATING FINFET DEVICES WITH...
- Publication number 20180358267
- Publication date Dec 13, 2018
- GLOBALFOUNDRIES INC.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE FINFET SHORT CHANNEL GATE HEIGHT
- Publication number 20180330995
- Publication date Nov 15, 2018
- GLOBALFOUNDRIES INC.
- Xinyuan DOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF THE LINE (MOL) CONTACT FORMATION METHOD AND STRUCTURE
- Publication number 20180240703
- Publication date Aug 23, 2018
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING FLOWABLE CHEMICAL...
- Publication number 20170018452
- Publication date Jan 19, 2017
- GLOBALFOUNDRIES, Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS

Xinyuan Dou

Person

Patents Grantslast 30 patents

STI structure with liner along lower portion of longitudinal sides...

Integrated circuit structure to reduce soft-fail incidence and meth...

Method of forming smooth sidewall structures using spacer materials

Method to reduce FinFET short channel gate height

Method to form high performance fin profile for 12LP and above

Selective shallow trench isolation (STI) fill for stress engineerin...

Middle of the line (MOL) contact formation method and structure

Methods, apparatus, and system for fabricating finFET devices with...

Integrated circuit structure including single diffusion break and e...

Semiconductor structure with uniform gate heights

Methods of forming short channel and long channel finFET devices so...

Method to reduce FinFET short channel gate height

Fin-type field effect transistors with single-diffusion breaks and...

Methods for fabricating integrated circuits using flowable chemical...

Patents Applicationslast 30 patents

GATE CAPPING LAYERS OF SEMICONDUCTOR DEVICES

SMOOTH SIDEWALL STRUCTURES

INTEGRATED CIRCUIT STRUCTURE TO REDUCE SOFT-FAIL INCIDENCE AND METH...

NOVEL METHOD TO FORM HIGH PERFORMANCE FIN PROFILE FOR 12LP AND ABOVE

SELECTIVE SHALLOW TRENCH ISOLATION (STI) FILL FOR STRESS ENGINEERIN...

METHODS, APPARATUS, AND SYSTEM FOR FABRICATING FINFET DEVICES WITH...

METHOD TO REDUCE FINFET SHORT CHANNEL GATE HEIGHT

MIDDLE OF THE LINE (MOL) CONTACT FORMATION METHOD AND STRUCTURE

METHODS FOR FABRICATING INTEGRATED CIRCUITS USING FLOWABLE CHEMICAL...