Xinyun Xie

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,957,785
- Issue date Mar 23, 2021
- Semiconductor Manufacturing (Shanghai) International Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,381,464
- Issue date Aug 13, 2019
- SEMICONDUCTOR MANUFACTURING INTL. (SHANGHAI) Corp.
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type semiconductor device
- Patent number 10,312,333
- Issue date Jun 4, 2019
- Semiconductor Manufacturing International (Beijing) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices having a material formed on reduced source/drain region
- Patent number 10,290,724
- Issue date May 14, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and FinFET transistor
- Patent number 10,134,761
- Issue date Nov 20, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved core and input/output device r...
- Patent number 9,985,015
- Issue date May 29, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating method of fin-type semiconductor device
- Patent number 9,923,065
- Issue date Mar 20, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET structure and method of forming same
- Patent number 9,899,380
- Issue date Feb 20, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, FinFET transistor and fabrication method thereof
- Patent number 9,799,676
- Issue date Oct 24, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a material formed on reduced source/drain regi...
- Patent number 9,673,325
- Issue date Jun 6, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and fabrication method thereof
- Patent number 9,634,087
- Issue date Apr 25, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for core and in/out-put device reliability improve at high-K...
- Patent number 9,502,403
- Issue date Nov 22, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,472,668
- Issue date Oct 18, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET SRAM ratio tuning
- Patent number 9,184,170
- Issue date Nov 10, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190326418
- Publication date Oct 24, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20180337265
- Publication date Nov 22, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE SEMICONDUCTOR DEVICE
- Publication number 20180175151
- Publication date Jun 21, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FINFET TRANSISTOR
- Publication number 20180006063
- Publication date Jan 4, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES HAVING A MATERIAL FORMED ON REDUCED SOURCE/DRAIN REGION
- Publication number 20170229559
- Publication date Aug 10, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED CORE AND INPUT/OUTPUT DEVICE R...
- Publication number 20170040310
- Publication date Feb 9, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Publication number 20170033190
- Publication date Feb 2, 2017
- Semiconductor Manufacturing International (Beijing) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, FINFET TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20160351591
- Publication date Dec 1, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20160240530
- Publication date Aug 18, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FINFET SOURCE/DRAIN FORMATION AND FINFET DEVICES
- Publication number 20160093738
- Publication date Mar 31, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20160020325
- Publication date Jan 21, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FINFET SRAM RATIO TUNING
- Publication number 20150102423
- Publication date Apr 16, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CORE AND IN/OUT-PUT DEVICE RELIABILITY IMPROVE AT HIGH-K...
- Publication number 20150035079
- Publication date Feb 5, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- XINYUN XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20130181279
- Publication date Jul 18, 2013
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Zhi TIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-WORKING VOLTAGES CMOS DEVICE WITH SINGLE GATE OXIDE LAYER THI...
- Publication number 20130049119
- Publication date Feb 28, 2013
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Xiaolu HUANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for manufacturing semiconductor device

Method for manufacturing semiconductor device

Fin-type semiconductor device

FinFET devices having a material formed on reduced source/drain region

Semiconductor device and FinFET transistor

Semiconductor device having improved core and input/output device r...

Fabricating method of fin-type semiconductor device

FINFET structure and method of forming same

Semiconductor device, FinFET transistor and fabrication method thereof

FinFET device having a material formed on reduced source/drain regi...

FinFET and fabrication method thereof

Method for core and in/out-put device reliability improve at high-K...

Semiconductor device and fabrication method thereof

Method for FinFET SRAM ratio tuning

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

FIN-TYPE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FINFET TRANSISTOR

FINFET DEVICES HAVING A MATERIAL FORMED ON REDUCED SOURCE/DRAIN REGION

SEMICONDUCTOR DEVICE HAVING IMPROVED CORE AND INPUT/OUTPUT DEVICE R...

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

SEMICONDUCTOR DEVICE, FINFET TRANSISTOR AND FABRICATION METHOD THEREOF

FINFET STRUCTURE AND METHOD OF FORMING SAME

METHODS FOR FINFET SOURCE/DRAIN FORMATION AND FINFET DEVICES

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR FINFET SRAM RATIO TUNING

METHOD FOR CORE AND IN/OUT-PUT DEVICE RELIABILITY IMPROVE AT HIGH-K...

SONOS STRUCTURE AND MANUFACTURING METHOD THEREOF

MULTI-WORKING VOLTAGES CMOS DEVICE WITH SINGLE GATE OXIDE LAYER THI...