Xiong-Fei Yu

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple layer high-k gate dielectric stack for workfunction engineering
- Patent number 12,015,066
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in semiconductor devices
- Patent number 11,915,979
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,908,695
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,862,468
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in semiconductor devices
- Patent number 11,756,832
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a lanthanum containing layer
- Patent number 11,699,621
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-conformal oxide liner and manufacturing methods thereof
- Patent number 11,640,977
- Issue date May 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,462,626
- Issue date Oct 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,257,819
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for patterning a lanthanum containing layer
- Patent number 11,171,061
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing metal gate devices with multiple barrier layers
- Patent number 11,171,134
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices and FinFET devices having...
- Patent number 11,107,897
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,069,531
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,991,695
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Passivator for gate dielectric
- Patent number 10,964,543
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 10,879,061
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Chun-Heng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal treatment for gate dielectrics
- Patent number 10,879,371
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having isolation struc...
- Patent number 10,867,859
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a lanthanum containing layer
- Patent number 10,867,869
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-conformal oxide liner and manufacturing methods thereof
- Patent number 10,784,359
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors having conformal oxide layers and meth...
- Patent number 10,756,199
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,622,356
- Issue date Apr 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Techniques providing metal gate devices with multiple barrier layers
- Patent number 10,522,544
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a lanthanum containing layer
- Patent number 10,504,795
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivator for gate dielectric
- Patent number 10,468,258
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer on semiconductor devices
- Patent number 10,374,055
- Issue date Aug 6, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and FinFET devices having shielding layers
- Patent number 10,367,078
- Issue date Jul 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing metal gate devices with multiple barrier layers
- Patent number 10,312,236
- Issue date Jun 4, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET doping methods and structures thereof
- Patent number 10,276,399
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379366
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures in Semiconductor Devices
- Publication number 20240153823
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Methods That Include Treating Spacers to Widen Gate
- Publication number 20240145250
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20240021693
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING
- Publication number 20230378294
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230377891
- Publication date Nov 23, 2023
- Taiwan Semiconducor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-CONFORMAL OXIDE LINER AND MANUFACTURING METHODS THEREOF
- Publication number 20230207646
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220376077
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20220367279
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220246433
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220173104
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan CHANG
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for Patterning a Lanthanum Containing Layer
- Publication number 20220059412
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering
- Publication number 20210399104
- Publication date Dec 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Methods That Include Treating Spacers to Widen Gate
- Publication number 20210343533
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20210126101
- Publication date Apr 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210126105
- Publication date Apr 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20210098303
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES AND FINFET DEVICES
- Publication number 20210028285
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Conformal Oxide Liner and Manufacturing Methods Thereof
- Publication number 20210005727
- Publication date Jan 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200243524
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan CHANG
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Device and Method of Forming
- Publication number 20200135474
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing Metal Gate Devices with Multiple Barrier Layers
- Publication number 20200126985
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Patterning a Lanthanum Containing Layer
- Publication number 20200083115
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivator for Gate Dielectric
- Publication number 20200066535
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Patterning a Lanthanum Containing Layer
- Publication number 20200006157
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal Treatment for Gate Dielectrics
- Publication number 20190378913
- Publication date Dec 12, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-CONFORMAL OXIDE LINER AND MANUFACTURING METHODS THEREOF
- Publication number 20190355823
- Publication date Nov 21, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PATTERNING A LANTHANUM CONTAINING LAYER
- Publication number 20190304846
- Publication date Oct 3, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Yu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing Metal Gate Devices with Multiple Barrier Layers
- Publication number 20190259753
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistors having Conformal Oxide Layers and Meth...
- Publication number 20190245057
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS

Xiong-Fei Yu

Person

Patents Grantslast 30 patents

Fin field effect transistor having conformal and non-conformal gate...

Triple layer high-k gate dielectric stack for workfunction engineering

Gate structures in semiconductor devices

Replacement gate methods that include treating spacers to widen gate

Semiconductor device and method

Gate structures in semiconductor devices

Method for patterning a lanthanum containing layer

Non-conformal oxide liner and manufacturing methods thereof

Semiconductor device and method of manufacture

Semiconductor device

Method for patterning a lanthanum containing layer

Techniques providing metal gate devices with multiple barrier layers

Methods of forming semiconductor devices and FinFET devices having...

Replacement gate methods that include treating spacers to widen gate

Method for manufacturing semiconductor device

Passivator for gate dielectric

Semiconductor device and method for forming the same

Thermal treatment for gate dielectrics

Methods of fabricating semiconductor devices having isolation struc...

Method for patterning a lanthanum containing layer

Non-conformal oxide liner and manufacturing methods thereof

Fin field effect transistors having conformal oxide layers and meth...

Semiconductor device and method of manufacturing the same

Techniques providing metal gate devices with multiple barrier layers

Method for patterning a lanthanum containing layer

Passivator for gate dielectric

Buffer layer on semiconductor devices

Semiconductor devices and FinFET devices having shielding layers

Techniques providing metal gate devices with multiple barrier layers

FinFET doping methods and structures thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES

Gate Structures in Semiconductor Devices

Replacement Gate Methods That Include Treating Spacers to Widen Gate

GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING

SEMICONDUCTOR DEVICE AND METHOD

NON-CONFORMAL OXIDE LINER AND MANUFACTURING METHODS THEREOF

Semiconductor Device and Method of Manufacture

GATE STRUCTURES IN SEMICONDUCTOR DEVICES

Semiconductor Device and Method

SEMICONDUCTOR DEVICE

Method for Patterning a Lanthanum Containing Layer

Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering

Replacement Gate Methods That Include Treating Spacers to Widen Gate

GATE STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

Semiconductor Device and Method of Manufacture

GATE STRUCTURES IN SEMICONDUCTOR DEVICES

METHODS OF FORMING SEMICONDUCTOR DEVICES AND FINFET DEVICES

Non-Conformal Oxide Liner and Manufacturing Methods Thereof

SEMICONDUCTOR DEVICE

Semiconductor Device and Method of Forming

Techniques Providing Metal Gate Devices with Multiple Barrier Layers

Method for Patterning a Lanthanum Containing Layer

Passivator for Gate Dielectric

Method for Patterning a Lanthanum Containing Layer

Thermal Treatment for Gate Dielectrics

NON-CONFORMAL OXIDE LINER AND MANUFACTURING METHODS THEREOF

METHOD FOR PATTERNING A LANTHANUM CONTAINING LAYER

Techniques Providing Metal Gate Devices with Multiple Barrier Layers

Fin Field Effect Transistors having Conformal Oxide Layers and Meth...