Xiuguang XIAO

Follow

Person

Shenzhen, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Fast recovery diode and manufacturing method thereof
- Patent number 12,080,806
- Issue date Sep 3, 2024
- BYD SEMICONDUCTOR COMPANY LIMITED
- Xiuguang Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF, A...
- Publication number 20230015515
- Publication date Jan 19, 2023
- BYD SEMICONDUCTOR COMPANY LIMITED
- Hui ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST RECOVERY DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20220059707
- Publication date Feb 24, 2022
- BYD SEMICONDUCTOR COMPANY LIMITED
- Xiuguang XIAO
- H01 - BASIC ELECTRIC ELEMENTS