Xiuyu Cai

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming replacement low-k spacer in tight pitch fin field effect tr...
- Patent number 11,374,111
- Issue date Jun 28, 2022
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area contacts for small transistors
- Patent number 10,749,031
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unmerged epitaxial process for FinFET devices with aggressive fin p...
- Patent number 10,734,499
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including low-K spacer material
- Patent number 10,629,743
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming replacement low-K spacer in tight pitch fin field effect tr...
- Patent number 10,622,457
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET including tunable fin height and tunable fin width ratio
- Patent number 10,622,357
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming replacement low-K spacer in tight pitch fin field effect tr...
- Patent number 10,593,780
- Issue date Mar 17, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure having low resistance contacts and fabrication method
- Patent number 10,546,856
- Issue date Jan 28, 2020
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for protecting gates during epitaxial growth
- Patent number 10,446,665
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES INC.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unmerged epitaxial process for FinFET devices with aggressive fin p...
- Patent number 10,388,754
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including low-k spacer material
- Patent number 10,361,311
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High doped III-V source/drain junctions for field effect transistors
- Patent number 10,355,086
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs having strained channels, and methods of fabricating finFET...
- Patent number 10,355,020
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Qing Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having fins with in-situ doped, punch-through...
- Patent number 10,290,636
- Issue date May 14, 2019
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET including tunable fin height and tunable fin width ratio
- Patent number 10,276,573
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High doped III-V source/drain junctions for field effect transistors
- Patent number 10,256,304
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a protection layer on a semiconductor device and...
- Patent number 10,249,726
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including low-K spacer material
- Patent number 10,217,869
- Issue date Feb 26, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fins including sidewall recesses
- Patent number 10,153,371
- Issue date Dec 11, 2018
- STMicroelectronics, Inc.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical slit transistor with optimized AC performance
- Patent number 10,134,903
- Issue date Nov 20, 2018
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Series resistance reduction in vertically stacked silicon nanowire...
- Patent number 10,134,840
- Issue date Nov 20, 2018
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having low contact resistance and low current...
- Patent number 10,062,762
- Issue date Aug 28, 2018
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unmerged epitaxial process for FinFET devices with aggressive fin p...
- Patent number 10,032,884
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated structure having an epitaxial SiGe layer e...
- Patent number 10,032,912
- Issue date Jul 24, 2018
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device spacers
- Patent number 10,014,299
- Issue date Jul 3, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor device with self-aligned contact e...
- Patent number 10,014,379
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure cut after formation of epitaxial active regions
- Patent number 10,008,415
- Issue date Jun 26, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement low-k spacer
- Patent number 9,985,135
- Issue date May 29, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for protecting gates during epitaxial growth
- Patent number 9,941,388
- Issue date Apr 10, 2018
- GLOBALFOUNDRIES Inc.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High doped III-V source/drain junctions for field effect transistors
- Patent number 9,935,201
- Issue date Apr 3, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TR...
- Publication number 20200152765
- Publication date May 14, 2020
- International Business Machines Corporation
- Xiuyu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET INCLUDING TUNABLE FIN HEIGHT AND TUNABLE FIN WIDTH RATIO
- Publication number 20190206868
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL
- Publication number 20190148557
- Publication date May 16, 2019
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...
- Publication number 20180277648
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL
- Publication number 20180219096
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR PROTECTING GATES DURING EPITAXIAL GROWTH
- Publication number 20180190787
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS
- Publication number 20180175202
- Publication date Jun 21, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL
- Publication number 20180090327
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH FILLED GATE LINE END RE...
- Publication number 20170200812
- Publication date Jul 13, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT LOW-K SPACER
- Publication number 20170194153
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT LOW-K SPACER
- Publication number 20170194499
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A PROTECTION LAYER ON A SEMICONDUCTOR DEVICE AND...
- Publication number 20170179246
- Publication date Jun 22, 2017
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT LOW-K SPACER
- Publication number 20170148894
- Publication date May 25, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS
- Publication number 20170140994
- Publication date May 18, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...
- Publication number 20170117274
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...
- Publication number 20170117276
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS
- Publication number 20170110583
- Publication date Apr 20, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TR...
- Publication number 20170103917
- Publication date Apr 13, 2017
- International Business Machines Corporation
- Xiuyu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TR...
- Publication number 20170104082
- Publication date Apr 13, 2017
- International Business Machines Corporation
- Xiuyu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE SPACERS
- Publication number 20170092645
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACT E...
- Publication number 20170077247
- Publication date Mar 16, 2017
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SLIT TRANSISTOR WITH OPTIMIZED AC PERFORMANCE
- Publication number 20170077306
- Publication date Mar 16, 2017
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING RELIABLE CONTACTS ON TIGHT SEMICONDUCTOR PITCH
- Publication number 20170069627
- Publication date Mar 9, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SERIES RESISTANCE REDUCTION IN VERTICALLY STACKED SILICON NANOWIRE...
- Publication number 20170053982
- Publication date Feb 23, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS
- Publication number 20170033221
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS
- Publication number 20170033197
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE AREA CONTACTS FOR SMALL TRANSISTORS
- Publication number 20170012130
- Publication date Jan 12, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING CONTROLLABLE UNMERGED EPITAXIAL MAT...
- Publication number 20170012042
- Publication date Jan 12, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL FINFET WITH RELAXED PFET REGION
- Publication number 20160372493
- Publication date Dec 22, 2016
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSING RMG METAL GATE STACK FOR FORMING SELF-ALIGNED CONTACT
- Publication number 20160372576
- Publication date Dec 22, 2016
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Forming replacement low-k spacer in tight pitch fin field effect tr...

Large area contacts for small transistors

Unmerged epitaxial process for FinFET devices with aggressive fin p...

Semiconductor structure including low-K spacer material

Forming replacement low-K spacer in tight pitch fin field effect tr...

FinFET including tunable fin height and tunable fin width ratio

Forming replacement low-K spacer in tight pitch fin field effect tr...

CMOS structure having low resistance contacts and fabrication method

Method and structure for protecting gates during epitaxial growth

Unmerged epitaxial process for FinFET devices with aggressive fin p...

Semiconductor structure including low-k spacer material

High doped III-V source/drain junctions for field effect transistors

FinFETs having strained channels, and methods of fabricating finFET...

Semiconductor device having fins with in-situ doped, punch-through...

FinFET including tunable fin height and tunable fin width ratio

High doped III-V source/drain junctions for field effect transistors

Methods of forming a protection layer on a semiconductor device and...

Semiconductor structure including low-K spacer material

Semiconductor device with fins including sidewall recesses

Vertical slit transistor with optimized AC performance

Series resistance reduction in vertically stacked silicon nanowire...

Semiconductor devices having low contact resistance and low current...

Unmerged epitaxial process for FinFET devices with aggressive fin p...

Semiconductor integrated structure having an epitaxial SiGe layer e...

Field effect transistor device spacers

Methods of forming semiconductor device with self-aligned contact e...

Gate structure cut after formation of epitaxial active regions

Replacement low-k spacer

Method and structure for protecting gates during epitaxial growth

High doped III-V source/drain junctions for field effect transistors

Patents Applicationslast 30 patents

FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TR...

FINFET INCLUDING TUNABLE FIN HEIGHT AND TUNABLE FIN WIDTH RATIO

SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL

UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...

SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL

METHOD AND STRUCTURE FOR PROTECTING GATES DURING EPITAXIAL GROWTH

HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS

SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL

METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH FILLED GATE LINE END RE...

REPLACEMENT LOW-K SPACER

REPLACEMENT LOW-K SPACER

METHODS OF FORMING A PROTECTION LAYER ON A SEMICONDUCTOR DEVICE AND...

REPLACEMENT LOW-K SPACER

GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS

UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...

UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN P...

HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS

FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TR...

FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TR...

FIELD EFFECT TRANSISTOR DEVICE SPACERS

METHODS OF FORMING SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACT E...

VERTICAL SLIT TRANSISTOR WITH OPTIMIZED AC PERFORMANCE

FORMING RELIABLE CONTACTS ON TIGHT SEMICONDUCTOR PITCH

SERIES RESISTANCE REDUCTION IN VERTICALLY STACKED SILICON NANOWIRE...

HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS

HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS

LARGE AREA CONTACTS FOR SMALL TRANSISTORS

METHOD AND STRUCTURE OF FORMING CONTROLLABLE UNMERGED EPITAXIAL MAT...

DUAL CHANNEL FINFET WITH RELAXED PFET REGION

RECESSING RMG METAL GATE STACK FOR FORMING SELF-ALIGNED CONTACT