Xiying Costa

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile storage system with adjustable select gates as a funct...
- Patent number 10,573,388
- Issue date Feb 25, 2020
- Western Digital Technologies, Inc.
- Mahim Raj Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line dependent pass voltages in non-volatile memory
- Patent number 10,388,390
- Issue date Aug 20, 2019
- SanDisk Technologies LLC
- Xiying Costa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory structure having a back gate electrode
- Patent number 10,355,007
- Issue date Jul 16, 2019
- SanDisk Technologies LLC
- Xiying Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line dependent pass voltages in non-volatile memory
- Patent number 10,283,208
- Issue date May 7, 2019
- SanDisk Technologies LLC
- Xiying Costa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory devices containing inter-tier dummy memory...
- Patent number 10,056,399
- Issue date Aug 21, 2018
- SanDisk Technologies LLC
- Xiying Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line dependent pass voltages in non-volatile memory
- Patent number 10,049,758
- Issue date Aug 14, 2018
- SanDisk Technologies LLC
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked vertical memory array architectures, systems and methods
- Patent number 9,672,917
- Issue date Jun 6, 2017
- SanDisk Technologies LLC
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical NAND and method of making thereof using sequential stack e...
- Patent number 9,515,080
- Issue date Dec 6, 2016
- SanDisk Technologies LLC
- Akira Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recovery of partially programmed block in non-volatile memory
- Patent number 9,460,799
- Issue date Oct 4, 2016
- SanDisk Technologies LLC
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Group word line erase and erase-verify methods for 3D non-volatile...
- Patent number 9,330,778
- Issue date May 3, 2016
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact three dimensional vertical NAND and method of making thereof
- Patent number 9,331,090
- Issue date May 3, 2016
- SanDisk Technologies Inc.
- Johann Alsmeier
- G11 - INFORMATION STORAGE
Information Patent Grant
Pseudo block operation mode in 3D NAND
- Patent number 9,240,241
- Issue date Jan 19, 2016
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Selection of data for redundancy calculation by likely error rate
- Patent number 9,177,673
- Issue date Nov 3, 2015
- SanDisk Technologies Inc.
- Deepak Raghu
- G11 - INFORMATION STORAGE
Information Patent Grant
Surface treatment to improve resistive-switching characteristics
- Patent number 9,178,149
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Michael Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erase operation for 3D non-volatile memory with controllable gate-i...
- Patent number 9,142,304
- Issue date Sep 22, 2015
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Selection of data for redundancy calculation by likely error rate
- Patent number 9,136,022
- Issue date Sep 15, 2015
- SanDisk Technologies Inc.
- Deepak Raghu
- G11 - INFORMATION STORAGE
Information Patent Grant
3D stacked non-volatile storage programming to conductive state
- Patent number 9,099,202
- Issue date Aug 4, 2015
- SanDisk Technologies Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Group word line erase and erase-verify methods for 3D non-volatile...
- Patent number 9,047,973
- Issue date Jun 2, 2015
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase operation for 3D non-volatile memory with controllable gate-i...
- Patent number 9,019,775
- Issue date Apr 28, 2015
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Balanced method for programming multi-layer cell memories
- Patent number 8,934,292
- Issue date Jan 13, 2015
- Sandisk 3D LLC
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Pseudo block operation mode in 3D NAND
- Patent number 8,923,054
- Issue date Dec 30, 2014
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Pseudo block operation mode in 3D NAND
- Patent number 8,913,431
- Issue date Dec 16, 2014
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase operation with controlled select gate voltage for 3D non-vola...
- Patent number 8,908,435
- Issue date Dec 9, 2014
- SanDisk Technologies Inc.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase for 3D non-volatile memory with sequential selection of word...
- Patent number 8,908,444
- Issue date Dec 9, 2014
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical NAND and method of making thereof using sequential stack e...
- Patent number 8,884,357
- Issue date Nov 11, 2014
- SanDisk Technologies Inc.
- Chi-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erase operation with controlled select gate voltage for 3D non-vola...
- Patent number 8,885,412
- Issue date Nov 11, 2014
- SanDisk Technologies Inc.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Counter doping compensation methods to improve diode performance
- Patent number 8,883,589
- Issue date Nov 11, 2014
- Sandisk 3D LLC
- Xiying Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft erase operation for 3D non-volatile memory with selective inhi...
- Patent number 8,879,333
- Issue date Nov 4, 2014
- SanDisk Technologies Inc.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact three dimensional vertical NAND and method of making thereof
- Patent number 8,878,278
- Issue date Nov 4, 2014
- SanDisk Technologies Inc.
- Johann Alsmeier
- G11 - INFORMATION STORAGE
Information Patent Grant
Surface treatment to improve resistive-switching characteristics
- Patent number 8,872,151
- Issue date Oct 28, 2014
- Intermolecular, Inc.
- Michael Miller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE STORAGE SYSTEM WITH ADJUSTABLE SELECT GATES AS A FUNCT...
- Publication number 20190311770
- Publication date Oct 10, 2019
- Western Digital Technologies, Inc.
- Mahim Raj Gupta
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DEPENDENT PASS VOLTAGES IN NON-VOLATILE MEMORY
- Publication number 20190221274
- Publication date Jul 18, 2019
- SANDISK TECHNOLOGIES LLC
- Xiying Costa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WORD LINE DEPENDENT PASS VOLTAGES IN NON-VOLATILE MEMORY
- Publication number 20180322935
- Publication date Nov 8, 2018
- SANDISK TECHNOLOGIES LLC
- Xiying Costa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES CONTAINING INTER-TIER DUMMY MEMORY...
- Publication number 20180182771
- Publication date Jun 28, 2018
- SanDisk Technologies LLC
- Xiying Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Word Line Dependent Pass Voltages In Non-Volatile Memory
- Publication number 20180012667
- Publication date Jan 11, 2018
- SanDisk Technologies LLC
- Xiying Costa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE
- Publication number 20170098655
- Publication date Apr 6, 2017
- SanDisk Technologies LLC
- Xiying COSTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Erase Operation For 3D Non-Volatile Memory With Controllable Gate-I...
- Publication number 20150170748
- Publication date Jun 18, 2015
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Selection of Data for Redundancy Calculation By Likely Error Rate
- Publication number 20150121157
- Publication date Apr 30, 2015
- SANDISK TECHNOLOGIES INC.
- Deepak Raghu
- G11 - INFORMATION STORAGE
Information Patent Application
Selection of Data for Redundancy Calculation By Likely Error Rate
- Publication number 20150117099
- Publication date Apr 30, 2015
- SANDISK TECHNOLOGIES INC.
- Deepak Raghu
- G11 - INFORMATION STORAGE
Information Patent Application
Pseudo Block Operation Mode In 3D NAND
- Publication number 20150092493
- Publication date Apr 2, 2015
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Group Word Line Erase And Erase-Verify Methods For 3D Non-Volatile...
- Publication number 20150043278
- Publication date Feb 12, 2015
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
COMPACT THREE DIMENSIONAL VERTICAL NAND AND METHOD OF MAKING THEREOF
- Publication number 20150037950
- Publication date Feb 5, 2015
- SANDISK TECHNOLOGIES INC.
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDO BLOCK OPERATION MODE IN 3D NAND
- Publication number 20140369123
- Publication date Dec 18, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
PSEUDO BLOCK OPERATION MODE IN 3D NAND
- Publication number 20140369122
- Publication date Dec 18, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Surface Treatment to Improve Resistive-Switching Characteristics
- Publication number 20140322887
- Publication date Oct 30, 2014
- Michael Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NAND AND METHOD OF MAKING THEREOF USING SEQUENTIAL STACK E...
- Publication number 20140284697
- Publication date Sep 25, 2014
- SanDisk Technologies, Inc.
- Chi-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOFT ERASE OPERATION FOR 3D NON-VOLATILE MEMORY WITH SELECTIVE INHI...
- Publication number 20140269081
- Publication date Sep 18, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL NAND AND METHOD OF MAKING THEREOF USING SEQUENTIAL STACK E...
- Publication number 20140264525
- Publication date Sep 18, 2014
- SanDisk Technologies, Inc.
- Akira Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Erase For 3D Non-Volatile Memory With Sequential Selection Of Word...
- Publication number 20140247661
- Publication date Sep 4, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Group Word Line Erase And Erase-Verify Methods For 3D Non-Volatile...
- Publication number 20140247668
- Publication date Sep 4, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Erase Operation With Controlled Select Gate Voltage For 3D Non-Vola...
- Publication number 20140226416
- Publication date Aug 14, 2014
- SANDISK TECHNOLOGIES INC.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
GROUP WORD LINE ERASE AND ERASE-VERIFY METHODS FOR 3D NON-VOLATILE...
- Publication number 20140226414
- Publication date Aug 14, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
3D STACKED NON-VOLATILE STORAGE PROGRAMMING TO CONDUCTIVE STATE
- Publication number 20140126291
- Publication date May 8, 2014
- SANDISK TECHNOLOGIES INC.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
Erase For 3D Non-Volatile Memory With Sequential Selection Of Word...
- Publication number 20140043916
- Publication date Feb 13, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Surface Treatment to Improve Resistive-Switching Characteristics
- Publication number 20140001430
- Publication date Jan 2, 2014
- INTERMOLECULAR INC.
- Michael Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment For A Select Gate Transistor In A Stac...
- Publication number 20130322174
- Publication date Dec 5, 2013
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
Erase Inhibit For 3D Non-Volatile Memory
- Publication number 20130294167
- Publication date Nov 7, 2013
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
Soft Erase Operation For 3D Non-Volatile Memory With Selective Inhi...
- Publication number 20130279256
- Publication date Oct 24, 2013
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Erase Operation For 3D Non-Volatile Memory With Controllable Gate-I...
- Publication number 20130279257
- Publication date Oct 24, 2013
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
COMPACT THREE DIMENSIONAL VERTICAL NAND AND METHOD OF MAKING THEREOF
- Publication number 20130248974
- Publication date Sep 26, 2013
- SanDisk Technologies, Inc.
- Johann ALSMEIER
- G11 - INFORMATION STORAGE

Xiying Costa

Person

Patents Grantslast 30 patents

Non-volatile storage system with adjustable select gates as a funct...

Word line dependent pass voltages in non-volatile memory

Three-dimensional memory structure having a back gate electrode

Word line dependent pass voltages in non-volatile memory

Three-dimensional memory devices containing inter-tier dummy memory...

Word line dependent pass voltages in non-volatile memory

Stacked vertical memory array architectures, systems and methods

Vertical NAND and method of making thereof using sequential stack e...

Recovery of partially programmed block in non-volatile memory

Group word line erase and erase-verify methods for 3D non-volatile...

Compact three dimensional vertical NAND and method of making thereof

Pseudo block operation mode in 3D NAND

Selection of data for redundancy calculation by likely error rate

Surface treatment to improve resistive-switching characteristics

Erase operation for 3D non-volatile memory with controllable gate-i...

Selection of data for redundancy calculation by likely error rate

3D stacked non-volatile storage programming to conductive state

Group word line erase and erase-verify methods for 3D non-volatile...

Erase operation for 3D non-volatile memory with controllable gate-i...

Balanced method for programming multi-layer cell memories

Pseudo block operation mode in 3D NAND

Pseudo block operation mode in 3D NAND

Erase operation with controlled select gate voltage for 3D non-vola...

Erase for 3D non-volatile memory with sequential selection of word...

Vertical NAND and method of making thereof using sequential stack e...

Erase operation with controlled select gate voltage for 3D non-vola...

Counter doping compensation methods to improve diode performance

Soft erase operation for 3D non-volatile memory with selective inhi...

Compact three dimensional vertical NAND and method of making thereof

Surface treatment to improve resistive-switching characteristics

Patents Applicationslast 30 patents

NON-VOLATILE STORAGE SYSTEM WITH ADJUSTABLE SELECT GATES AS A FUNCT...

WORD LINE DEPENDENT PASS VOLTAGES IN NON-VOLATILE MEMORY

WORD LINE DEPENDENT PASS VOLTAGES IN NON-VOLATILE MEMORY

THREE-DIMENSIONAL MEMORY DEVICES CONTAINING INTER-TIER DUMMY MEMORY...

Word Line Dependent Pass Voltages In Non-Volatile Memory

THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE

Erase Operation For 3D Non-Volatile Memory With Controllable Gate-I...

Selection of Data for Redundancy Calculation By Likely Error Rate

Selection of Data for Redundancy Calculation By Likely Error Rate

Pseudo Block Operation Mode In 3D NAND

Group Word Line Erase And Erase-Verify Methods For 3D Non-Volatile...

COMPACT THREE DIMENSIONAL VERTICAL NAND AND METHOD OF MAKING THEREOF

PSEUDO BLOCK OPERATION MODE IN 3D NAND

PSEUDO BLOCK OPERATION MODE IN 3D NAND

Surface Treatment to Improve Resistive-Switching Characteristics

VERTICAL NAND AND METHOD OF MAKING THEREOF USING SEQUENTIAL STACK E...

SOFT ERASE OPERATION FOR 3D NON-VOLATILE MEMORY WITH SELECTIVE INHI...

VERTICAL NAND AND METHOD OF MAKING THEREOF USING SEQUENTIAL STACK E...

Erase For 3D Non-Volatile Memory With Sequential Selection Of Word...

Group Word Line Erase And Erase-Verify Methods For 3D Non-Volatile...

Erase Operation With Controlled Select Gate Voltage For 3D Non-Vola...

GROUP WORD LINE ERASE AND ERASE-VERIFY METHODS FOR 3D NON-VOLATILE...

3D STACKED NON-VOLATILE STORAGE PROGRAMMING TO CONDUCTIVE STATE

Erase For 3D Non-Volatile Memory With Sequential Selection Of Word...

Surface Treatment to Improve Resistive-Switching Characteristics

Threshold Voltage Adjustment For A Select Gate Transistor In A Stac...

Erase Inhibit For 3D Non-Volatile Memory

Soft Erase Operation For 3D Non-Volatile Memory With Selective Inhi...

Erase Operation For 3D Non-Volatile Memory With Controllable Gate-I...

COMPACT THREE DIMENSIONAL VERTICAL NAND AND METHOD OF MAKING THEREOF