Xuefeng Liu

Person

South Burlington, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electrostatic discharge diode having dielectric isolation layer
- Patent number 12,119,341
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 11,011,513
- Issue date May 18, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of input/output device in vertical field-effect transis...
- Patent number 10,964,812
- Issue date Mar 30, 2021
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of input/output device in vertical field-effect transis...
- Patent number 10,840,373
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs
- Patent number 10,811,528
- Issue date Oct 20, 2020
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices having spiral conductive structures
- Patent number 10,784,333
- Issue date Sep 22, 2020
- International Business Machines Corporation
- Peng Xu
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Integration of electrostatic discharge protection into vertical fin...
- Patent number 10,741,544
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory thin film transistor unit cell
- Patent number 10,727,273
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Praveen Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating metal-insulator-metal capacitors with fabrication of ve...
- Patent number 10,699,959
- Issue date Jun 30, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating metal-insulator-metal capacitors with fabrication of ve...
- Patent number 10,692,772
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of input/output device in vertical field-effect transis...
- Patent number 10,615,276
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 10,504,889
- Issue date Dec 10, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices having spiral conductive structures
- Patent number 10,431,646
- Issue date Oct 1, 2019
- International Business Machines Corporation
- Peng Xu
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Forming vertical transport field effect transistors with uniform bo...
- Patent number 10,396,179
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating metal-insulator-metal capacitors with fabrication of ve...
- Patent number 10,388,572
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming vertical transport field effect transistors with uniform bo...
- Patent number 10,361,285
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming eDRAM unit cell with VFET and via capacitance
- Patent number 10,319,852
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection using vertical fin CMOS technology
- Patent number 10,276,558
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avoiding gate metal via shorting to source or drain contacts
- Patent number 10,043,744
- Issue date Aug 7, 2018
- International Business Machines Corporation
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming vertical transport field effect transistors with uniform bo...
- Patent number 9,991,365
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming eDRAM unit cell with VFET and via capacitance
- Patent number 9,991,267
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avoiding gate metal via shorting to source or drain contacts
- Patent number 9,837,351
- Issue date Dec 5, 2017
- International Business Machines Corporation
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of bipolar transistor into complimentary metal-oxide-se...
- Patent number 9,786,656
- Issue date Oct 10, 2017
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On chip bias temperature instability characterization of a semicond...
- Patent number 9,404,960
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Hanyi Ding
- G01 - MEASURING TESTING
Information Patent Grant
Integrated LDMOS devices for silicon photonics
- Patent number 9,304,335
- Issue date Apr 5, 2016
- GLOBALFOUNDRIES Inc.
- John J. Ellis-Monaghan
- G02 - OPTICS
Information Patent Grant
Fabricating polysilicon MOS devices and passive ESD devices
- Patent number 9,087,808
- Issue date Jul 21, 2015
- International Business Machines Corporation
- John J. Ellis-Monaghan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Si and SiGeC on a buried oxide layer on a substrate
- Patent number 9,087,925
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of very high insertion loss of the substrate noise decoup...
- Patent number 9,059,183
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Hanyi Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with reduced sub-collector length...
- Patent number 9,059,138
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual L-shaped drift regions in an LDMOS device and method of making...
- Patent number 9,059,281
- Issue date Jun 16, 2015
- International Business Machines Corporation
- David G. Brochu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER
- Publication number 20230110825
- Publication date Apr 13, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF ELECTROSTATIC DISCHARGE PROTECTION INTO VERTICAL FIN...
- Publication number 20200152619
- Publication date May 14, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY THIN FILM TRANSISTOR UNIT CELL
- Publication number 20200119093
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Praveen JOSEPH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...
- Publication number 20200066711
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF INPUT/OUTPUT DEVICE IN VERTICAL FIELD-EFFECT TRANSIS...
- Publication number 20200066906
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF INPUT/OUTPUT DEVICE IN VERTICAL FIELD-EFFECT TRANSIS...
- Publication number 20200013891
- Publication date Jan 9, 2020
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES HAVING SPIRAL CONDUCTIVE STRUCTURES
- Publication number 20190341444
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two Step Fin Etch and Reveal for VTFETs and High Breakdown LDVTFETs
- Publication number 20190296142
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES HAVING SPIRAL CONDUCTIVE STRUCTURES
- Publication number 20190273127
- Publication date Sep 5, 2019
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING METAL-INSULATOR-METAL CAPACITORS WITH FABRICATION OF VE...
- Publication number 20190259666
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING METAL-INSULATOR-METAL CAPACITORS WITH FABRICATION OF VE...
- Publication number 20190252264
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF INPUT/OUTPUT DEVICE IN VERTICAL FIELD-EFFECT TRANSIS...
- Publication number 20190198667
- Publication date Jun 27, 2019
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION USING VERTICAL FIN CMOS TECHNOLOGY
- Publication number 20190131292
- Publication date May 2, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS WITH UNIFORM BO...
- Publication number 20180315835
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS WITH UNIFORM BO...
- Publication number 20180315834
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING METAL-INSULATOR-METAL CAPACITORS WITH FABRICATION OF VE...
- Publication number 20180254218
- Publication date Sep 6, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING eDRAM UNIT CELL WITH VFET AND VIA CAPACITANCE
- Publication number 20180211963
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVOIDING GATE METAL VIA SHORTING TO SOURCE OR DRAIN CONTACTS
- Publication number 20180061754
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVOIDING GATE METAL VIA SHORTING TO SOURCE OR DRAIN CONTACTS
- Publication number 20170352621
- Publication date Dec 7, 2017
- International Business Machines Corporation
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED LDMOS DEVICES FOR SILICON PHOTONICS
- Publication number 20160018677
- Publication date Jan 21, 2016
- International Business Machines Corporation
- John J. ELLIS-MONAGHAN
- G02 - OPTICS
Information Patent Application
ON CHIP BIAS TEMPERATURE INSTABILITY CHARACTERIZATION OF A SEMICOND...
- Publication number 20150091601
- Publication date Apr 2, 2015
- International Business Machines Corporation
- Hanyi Ding
- G01 - MEASURING TESTING
Information Patent Application
STRUCTURE, SYSTEM AND METHOD FOR DEVICE RADIO FREQUENCY (RF) RELIAB...
- Publication number 20150024693
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Donald J. Cook
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
DUAL L-SHAPED DRIFT REGIONS IN AN LDMOS DEVICE AND METHOD OF MAKING...
- Publication number 20150014771
- Publication date Jan 15, 2015
- International Business Machines Corporation
- David G. Brochu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING POLYSILICON MOS DEVICES AND PASSIVE ESD DEVICES
- Publication number 20140339607
- Publication date Nov 20, 2014
- John J. Ellis-Monaghan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER
- Publication number 20140239498
- Publication date Aug 28, 2014
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...
- Publication number 20140235021
- Publication date Aug 21, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING POLYSILICON MOS DEVICES AND PASSIVE ESD DEVICES
- Publication number 20140183753
- Publication date Jul 3, 2014
- International Business Machines Corporation
- John J. Ellis-Monaghan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
BACK-END-OF-LINE METAL-OXIDE-SEMICONDUCTOR VARACTORS
- Publication number 20140097434
- Publication date Apr 10, 2014
- International Business Machines Corporation
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE
- Publication number 20130299881
- Publication date Nov 14, 2013
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH REDUCED SUB-COLLECTOR LENGTH...
- Publication number 20130187198
- Publication date Jul 25, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS

Xuefeng Liu

Person

Patents Grantslast 30 patents

Electrostatic discharge diode having dielectric isolation layer

Integrating a junction field effect transistor into a vertical fiel...

Integration of input/output device in vertical field-effect transis...

Integration of input/output device in vertical field-effect transis...

Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs

Electronic devices having spiral conductive structures

Integration of electrostatic discharge protection into vertical fin...

Magnetoresistive random access memory thin film transistor unit cell

Integrating metal-insulator-metal capacitors with fabrication of ve...

Integrating metal-insulator-metal capacitors with fabrication of ve...

Integration of input/output device in vertical field-effect transis...

Integrating a junction field effect transistor into a vertical fiel...

Electronic devices having spiral conductive structures

Forming vertical transport field effect transistors with uniform bo...

Integrating metal-insulator-metal capacitors with fabrication of ve...

Forming vertical transport field effect transistors with uniform bo...

Forming eDRAM unit cell with VFET and via capacitance

Electrostatic discharge protection using vertical fin CMOS technology

Avoiding gate metal via shorting to source or drain contacts

Forming vertical transport field effect transistors with uniform bo...

Forming eDRAM unit cell with VFET and via capacitance

Avoiding gate metal via shorting to source or drain contacts

Integration of bipolar transistor into complimentary metal-oxide-se...

On chip bias temperature instability characterization of a semicond...

Integrated LDMOS devices for silicon photonics

Fabricating polysilicon MOS devices and passive ESD devices

Si and SiGeC on a buried oxide layer on a substrate

Structure of very high insertion loss of the substrate noise decoup...

Heterojunction bipolar transistor with reduced sub-collector length...

Dual L-shaped drift regions in an LDMOS device and method of making...

Patents Applicationslast 30 patents

ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER

INTEGRATION OF ELECTROSTATIC DISCHARGE PROTECTION INTO VERTICAL FIN...

MAGNETORESISTIVE RANDOM ACCESS MEMORY THIN FILM TRANSISTOR UNIT CELL

INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...

INTEGRATION OF INPUT/OUTPUT DEVICE IN VERTICAL FIELD-EFFECT TRANSIS...

INTEGRATION OF INPUT/OUTPUT DEVICE IN VERTICAL FIELD-EFFECT TRANSIS...

ELECTRONIC DEVICES HAVING SPIRAL CONDUCTIVE STRUCTURES

Two Step Fin Etch and Reveal for VTFETs and High Breakdown LDVTFETs

ELECTRONIC DEVICES HAVING SPIRAL CONDUCTIVE STRUCTURES

INTEGRATING METAL-INSULATOR-METAL CAPACITORS WITH FABRICATION OF VE...

INTEGRATING METAL-INSULATOR-METAL CAPACITORS WITH FABRICATION OF VE...

INTEGRATION OF INPUT/OUTPUT DEVICE IN VERTICAL FIELD-EFFECT TRANSIS...

ELECTROSTATIC DISCHARGE PROTECTION USING VERTICAL FIN CMOS TECHNOLOGY

FORMING VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS WITH UNIFORM BO...

FORMING VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS WITH UNIFORM BO...

INTEGRATING METAL-INSULATOR-METAL CAPACITORS WITH FABRICATION OF VE...

FORMING eDRAM UNIT CELL WITH VFET AND VIA CAPACITANCE

AVOIDING GATE METAL VIA SHORTING TO SOURCE OR DRAIN CONTACTS

AVOIDING GATE METAL VIA SHORTING TO SOURCE OR DRAIN CONTACTS

INTEGRATED LDMOS DEVICES FOR SILICON PHOTONICS

ON CHIP BIAS TEMPERATURE INSTABILITY CHARACTERIZATION OF A SEMICOND...

STRUCTURE, SYSTEM AND METHOD FOR DEVICE RADIO FREQUENCY (RF) RELIAB...

DUAL L-SHAPED DRIFT REGIONS IN AN LDMOS DEVICE AND METHOD OF MAKING...

FABRICATING POLYSILICON MOS DEVICES AND PASSIVE ESD DEVICES

SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER

JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...

FABRICATING POLYSILICON MOS DEVICES AND PASSIVE ESD DEVICES

BACK-END-OF-LINE METAL-OXIDE-SEMICONDUCTOR VARACTORS

ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE

HETEROJUNCTION BIPOLAR TRANSISTOR WITH REDUCED SUB-COLLECTOR LENGTH...