Xuejun Ying

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a die and through-substrate via
- Patent number 9,659,900
- Issue date May 23, 2017
- Maxim Intergrated Products, Inc.
- Xuejun Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded stacked wafers and methods of electroplating bonded stacked...
- Patent number 9,331,048
- Issue date May 3, 2016
- Maxim Integrated Products, Inc.
- Quanbo Zou
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device having a die and through substrate-via
- Patent number 9,196,587
- Issue date Nov 24, 2015
- Maxim Integrated Products, Inc.
- Xuejun Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a through-substrate via
- Patent number 9,105,750
- Issue date Aug 11, 2015
- Maxim Integrated Products, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for varied topographic MEMS cap process
- Patent number 9,040,386
- Issue date May 26, 2015
- Maxim Integrated Products, Inc.
- Xuejun Ying
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Bonded stacked wafers and methods of electroplating bonded stacked...
- Patent number 8,970,043
- Issue date Mar 3, 2015
- Maxim Integrated Products, Inc.
- Quanbo Zou
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Deep trench capacitor with conformally-deposited conductive layers...
- Patent number 8,963,287
- Issue date Feb 24, 2015
- Maxim Integrated Products, Inc.
- Lei Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a through-substrate via
- Patent number 8,742,574
- Issue date Jun 3, 2014
- Maxim Integrated Products, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench capacitor with conformally-deposited conductive layers...
- Patent number 8,487,405
- Issue date Jul 16, 2013
- Maxim Integrated Products, Inc.
- Lei Tian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DIE AND THROUGH-SUBSTRATE VIA
- Publication number 20160079197
- Publication date Mar 17, 2016
- Maxim Integrated Products, Inc.
- Xuejun Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED STACKED WAFERS AND METHODS OF ELECTROPLATING BONDED STACKED...
- Publication number 20150132891
- Publication date May 14, 2015
- Maxim Integrated Products, Inc.
- Quanbo Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR VARIED TOPOGRAPHIC MEMS CAP PROCESS
- Publication number 20150028455
- Publication date Jan 29, 2015
- Maxim Integrated Products, Inc.
- Xuejun Ying
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DIE AND THROUGH SUBSTRATE-VIA
- Publication number 20140264844
- Publication date Sep 18, 2014
- Xuejun Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A THROUGH-SUBSTRATE VIA
- Publication number 20130037948
- Publication date Feb 14, 2013
- MAXIM INTEGRATED PRODUCTS, INC.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH CAPACITOR WITH CONFORMALLY-DEPOSITED CONDUCTIVE LAYERS...
- Publication number 20120211865
- Publication date Aug 23, 2012
- MAXIM INTEGRATED PRODUCTS, INC.
- LEI TIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED STACKED WAFERS AND METHODS OF ELECTROPLATING BONDED STACKED...
- Publication number 20120193808
- Publication date Aug 2, 2012
- MAXIM INTEGRATED PRODUCTS, INC.
- Quanbo Zou
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
PREVENTING CONTACT STICTION IN MICRO RELAYS
- Publication number 20120194306
- Publication date Aug 2, 2012
- MAXIM INTEGRATED PRODUCTS, INC.
- Uppili Sridhar
- H01 - BASIC ELECTRIC ELEMENTS

Xuejun Ying

Person

Patents Grantslast 30 patents

Semiconductor device having a die and through-substrate via

Bonded stacked wafers and methods of electroplating bonded stacked...

Semiconductor device having a die and through substrate-via

Semiconductor device having a through-substrate via

Method for varied topographic MEMS cap process

Bonded stacked wafers and methods of electroplating bonded stacked...

Deep trench capacitor with conformally-deposited conductive layers...

Semiconductor device having a through-substrate via

Deep trench capacitor with conformally-deposited conductive layers...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A DIE AND THROUGH-SUBSTRATE VIA

BONDED STACKED WAFERS AND METHODS OF ELECTROPLATING BONDED STACKED...

METHOD FOR VARIED TOPOGRAPHIC MEMS CAP PROCESS

SEMICONDUCTOR DEVICE HAVING A DIE AND THROUGH SUBSTRATE-VIA

SEMICONDUCTOR DEVICE HAVING A THROUGH-SUBSTRATE VIA

DEEP TRENCH CAPACITOR WITH CONFORMALLY-DEPOSITED CONDUCTIVE LAYERS...

BONDED STACKED WAFERS AND METHODS OF ELECTROPLATING BONDED STACKED...

PREVENTING CONTACT STICTION IN MICRO RELAYS