Xueping Xu

Person

Stanford, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride articles and methods for making same
- Patent number 9,263,266
- Issue date Feb 16, 2016
- Kyma Technologies, Inc.
- Andrew D. Hanser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride articles having nucleation layers, transitional l...
- Patent number 9,082,890
- Issue date Jul 14, 2015
- Kyma Technologies, Inc.
- Andrew D. Hanser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal group III nitride articles and method of producing s...
- Patent number 8,871,556
- Issue date Oct 28, 2014
- Kyma Technologies, Inc.
- Edward Preble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dislocation density III-V nitride substrate including filled pi...
- Patent number 8,728,236
- Issue date May 20, 2014
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal group III nitride articles and method of producing s...
- Patent number 8,637,848
- Issue date Jan 28, 2014
- Kyma Technologies, Inc.
- Edward Preble
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production of carbon nanotubes
- Patent number 8,562,937
- Issue date Oct 22, 2013
- Nantero Inc.
- J. Donald Carruthers
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making group III nitride articles
- Patent number 8,435,879
- Issue date May 7, 2013
- Kyma Technologies, Inc.
- Andrew D. Hanser
- C30 - CRYSTAL GROWTH
Information Patent Grant
Orientation of electronic devices on mis-cut substrates
- Patent number 8,378,463
- Issue date Feb 19, 2013
- Cree, Inc.
- George R. Brandes
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal group III nitride articles and method of producing s...
- Patent number 8,349,711
- Issue date Jan 8, 2013
- Kyma Technologies, Inc.
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V nitride homoepitaxial material of improved quality formed on...
- Patent number 8,212,259
- Issue date Jul 3, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Inclusion-free uniform semi-insulating group III nitride substrates...
- Patent number 8,202,793
- Issue date Jun 19, 2012
- Kyma Technologies, Inc.
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 8,043,731
- Issue date Oct 25, 2011
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Large area, uniformly low dislocation density GaN substrate and pro...
- Patent number 7,972,711
- Issue date Jul 5, 2011
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal group III nitride articles and method of producing s...
- Patent number 7,897,490
- Issue date Mar 1, 2011
- Kyma Technologies, Inc.
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser diode orientation on mis-cut substrates
- Patent number 7,884,447
- Issue date Feb 8, 2011
- Cree, Inc.
- George R. Brandes
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Large area, uniformly low dislocation density GaN substrate and pro...
- Patent number 7,879,147
- Issue date Feb 1, 2011
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Inclusion-free uniform semi-insulating group III nitride substrate...
- Patent number 7,777,217
- Issue date Aug 17, 2010
- Kyma Technologies, Inc.
- Edward A. Preble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,700,203
- Issue date Apr 20, 2010
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,390,581
- Issue date Jun 24, 2008
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area, uniformly low dislocation density GaN substrate and pro...
- Patent number 7,323,256
- Issue date Jan 29, 2008
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating GaN and method of making the same
- Patent number 7,170,095
- Issue date Jan 30, 2007
- Cree. Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,118,813
- Issue date Oct 10, 2006
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN boule grown from liquid melt using GaN seed wafers
- Patent number 7,097,707
- Issue date Aug 29, 2006
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication of flat-panel display having spacer with rough face for...
- Patent number 7,090,554
- Issue date Aug 15, 2006
- Candescent Technologies Corporation
- Roger W. Barton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High surface quality GaN wafer and method of fabricating same
- Patent number 6,951,695
- Issue date Oct 4, 2005
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon carbide thin film coating
- Patent number 6,680,489
- Issue date Jan 20, 2004
- Advanced Technology Materials, Inc.
- George R. Brandes
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Flat-panel display having spacer with rough face for inhibiting sec...
- Patent number 6,617,772
- Issue date Sep 9, 2003
- Candescent Technologies Corporation
- Roger W. Barton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High surface quality GaN wafer and method of fabricating same
- Patent number 6,488,767
- Issue date Dec 3, 2002
- Advanced Technology Materials, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND...
- Patent number 6,447,604
- Issue date Sep 10, 2002
- Advanced Technology Materials, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Microelectronic and microelectromechanical devices comprising carbo...
- Patent number 6,445,006
- Issue date Sep 3, 2002
- Advanced Technology Materials, Inc.
- George R. Brandes
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE ARTICLES AND METHODS FOR MAKING SAME
- Publication number 20150279675
- Publication date Oct 1, 2015
- Kyma Technologies, Inc.
- Andrew D. Hanser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE ARTICLES HAVING NUCLEATION LAYERS, TRANSITIONAL L...
- Publication number 20150200256
- Publication date Jul 16, 2015
- Kyma Technologies, Inc.
- Andrew D. Hanser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING S...
- Publication number 20140162441
- Publication date Jun 12, 2014
- Kyma Technologies, Inc.
- Edward Preble
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING S...
- Publication number 20130264569
- Publication date Oct 10, 2013
- Kyma Technologies, Inc.
- Edward Preble
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING S...
- Publication number 20110198590
- Publication date Aug 18, 2011
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PRO...
- Publication number 20110140122
- Publication date Jun 16, 2011
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
ORIENTATION OF ELECTRONIC DEVICES ON MIS-CUT SUBSTRATES
- Publication number 20110089536
- Publication date Apr 21, 2011
- Cree, Inc.
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCLUSION-FREE UNIFORM SEMI-INSULATING GROUP III NITRIDE SUBSTRATES...
- Publication number 20110042682
- Publication date Feb 24, 2011
- Kyma Technologies
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal group III nitride articles and method of producing s...
- Publication number 20100327291
- Publication date Dec 30, 2010
- Kyma Technologies, Inc.
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Application
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
- Publication number 20100148320
- Publication date Jun 17, 2010
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III Nitride Articles and Methods for Making Same
- Publication number 20100044718
- Publication date Feb 25, 2010
- Andrew D. Hanser
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF CARBON NANOTUBES
- Publication number 20090099016
- Publication date Apr 16, 2009
- Advanced Technology Materials, Inc.
- J. Donald Carruthers
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Laser Diode Orientation on Mis-Cut Substrates
- Publication number 20080265379
- Publication date Oct 30, 2008
- Cree, Inc.
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
- Publication number 20080199649
- Publication date Aug 21, 2008
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...
- Publication number 20080124510
- Publication date May 29, 2008
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...
- Publication number 20080003786
- Publication date Jan 3, 2008
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect group III nitride films useful for electronic and optoel...
- Publication number 20070138505
- Publication date Jun 21, 2007
- Kyma Technologies, Inc.
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Application
Inclusion-free uniform semi-insulating group III nitride substrates...
- Publication number 20070141823
- Publication date Jun 21, 2007
- Kyma Technologies, Inc.
- Edward A. Preble
- C30 - CRYSTAL GROWTH
Information Patent Application
High electron mobility electronic device structures comprising nati...
- Publication number 20070018198
- Publication date Jan 25, 2007
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vicinal gallium nitride substrate for high quality homoepitaxy
- Publication number 20060228584
- Publication date Oct 12, 2006
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
High surface quality GaN wafer and method of fabricating same
- Publication number 20060029832
- Publication date Feb 9, 2006
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Vicinal gallium nitride substrate for high quality homoepitaxy
- Publication number 20050104162
- Publication date May 19, 2005
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Large area, uniformly low dislocation density GaN substrate and pro...
- Publication number 20050103257
- Publication date May 19, 2005
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Semi-insulating GaN and method of making the same
- Publication number 20050009310
- Publication date Jan 13, 2005
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN boule grown from liquid melt using GaN seed wafers
- Publication number 20040003495
- Publication date Jan 8, 2004
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V Nitride homoepitaxial material of improved MOVPE epitaxial qu...
- Publication number 20030213964
- Publication date Nov 20, 2003
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
High surface quality GaN wafer and method of fabricating same
- Publication number 20030127041
- Publication date Jul 10, 2003
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
- Publication number 20020185054
- Publication date Dec 12, 2002
- Advanced Technology Materials Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Amorphous silicon carbide thin film articles
- Publication number 20020096684
- Publication date Jul 25, 2002
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication and structure of electron emitters coated with material...
- Publication number 20020033663
- Publication date Mar 21, 2002
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Group III nitride articles and methods for making same

Group III nitride articles having nucleation layers, transitional l...

Single crystal group III nitride articles and method of producing s...

Low dislocation density III-V nitride substrate including filled pi...

Single crystal group III nitride articles and method of producing s...

Production of carbon nanotubes

Method for making group III nitride articles

Orientation of electronic devices on mis-cut substrates

Single crystal group III nitride articles and method of producing s...

III-V nitride homoepitaxial material of improved quality formed on...

Inclusion-free uniform semi-insulating group III nitride substrates...

Vicinal gallium nitride substrate for high quality homoepitaxy

Large area, uniformly low dislocation density GaN substrate and pro...

Single crystal group III nitride articles and method of producing s...

Laser diode orientation on mis-cut substrates

Large area, uniformly low dislocation density GaN substrate and pro...

Inclusion-free uniform semi-insulating group III nitride substrate...

Vicinal gallium nitride substrate for high quality homoepitaxy

Vicinal gallium nitride substrate for high quality homoepitaxy

Large area, uniformly low dislocation density GaN substrate and pro...

Semi-insulating GaN and method of making the same

Vicinal gallium nitride substrate for high quality homoepitaxy

GaN boule grown from liquid melt using GaN seed wafers

Fabrication of flat-panel display having spacer with rough face for...

High surface quality GaN wafer and method of fabricating same

Amorphous silicon carbide thin film coating

Flat-panel display having spacer with rough face for inhibiting sec...

High surface quality GaN wafer and method of fabricating same

METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND...

Microelectronic and microelectromechanical devices comprising carbo...

Patents Applicationslast 30 patents

GROUP III NITRIDE ARTICLES AND METHODS FOR MAKING SAME

GROUP III NITRIDE ARTICLES HAVING NUCLEATION LAYERS, TRANSITIONAL L...

SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING S...

SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING S...

SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING S...

LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PRO...

ORIENTATION OF ELECTRONIC DEVICES ON MIS-CUT SUBSTRATES

INCLUSION-FREE UNIFORM SEMI-INSULATING GROUP III NITRIDE SUBSTRATES...

Single crystal group III nitride articles and method of producing s...

VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

Group III Nitride Articles and Methods for Making Same

PRODUCTION OF CARBON NANOTUBES

Laser Diode Orientation on Mis-Cut Substrates

VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...

LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...

Low defect group III nitride films useful for electronic and optoel...

Inclusion-free uniform semi-insulating group III nitride substrates...

High electron mobility electronic device structures comprising nati...

Vicinal gallium nitride substrate for high quality homoepitaxy

High surface quality GaN wafer and method of fabricating same

Vicinal gallium nitride substrate for high quality homoepitaxy

Large area, uniformly low dislocation density GaN substrate and pro...

Semi-insulating GaN and method of making the same

GaN boule grown from liquid melt using GaN seed wafers

III-V Nitride homoepitaxial material of improved MOVPE epitaxial qu...

High surface quality GaN wafer and method of fabricating same

HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME

Amorphous silicon carbide thin film articles

Fabrication and structure of electron emitters coated with material...