Xuguang Wang

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile multi-bit memory with programmable capacitance
- Patent number 8,766,230
- Issue date Jul 1, 2014
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 8,559,255
- Issue date Oct 15, 2013
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Diode assisted switching spin-transfer torque memory unit
- Patent number 8,482,971
- Issue date Jul 9, 2013
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensionally stacked non volatile memory units
- Patent number 8,482,957
- Issue date Jul 9, 2013
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 8,264,898
- Issue date Sep 11, 2012
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Shared bit line and source line resistive sense memory structure
- Patent number 8,213,216
- Issue date Jul 3, 2012
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Diode assisted switching spin-transfer torque memory unit
- Patent number 8,199,569
- Issue date Jun 12, 2012
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Static source plane in STRAM
- Patent number 8,098,516
- Issue date Jan 17, 2012
- Seagate Technology, LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Static source plane in stram
- Patent number 8,068,359
- Issue date Nov 29, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensionally stacked non volatile memory units
- Patent number 8,054,673
- Issue date Nov 8, 2011
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 7,986,562
- Issue date Jul 26, 2011
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with programmable capacitance
- Patent number 7,977,722
- Issue date Jul 12, 2011
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Diode assisted switching spin-transfer torque memory unit
- Patent number 7,944,742
- Issue date May 17, 2011
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Shared bit line and source line resistive sense memory structure
- Patent number 7,940,548
- Issue date May 10, 2011
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Static source plane in stram
- Patent number 7,859,891
- Issue date Dec 28, 2010
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Diode assisted switching spin-transfer torque memory unit
- Patent number 7,804,709
- Issue date Sep 28, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile multi-bit memory with programmable capacitance
- Patent number 7,786,463
- Issue date Aug 31, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 7,679,967
- Issue date Mar 16, 2010
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Deep bitline implant to avoid program disturb
- Patent number 7,671,405
- Issue date Mar 2, 2010
- Spansion LLC
- Timothy Thurgate
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-phase wordline erasing for flash memory
- Patent number 7,626,869
- Issue date Dec 1, 2009
- Spansion LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Cycling improvement using higher erase bias
- Patent number 7,561,471
- Issue date Jul 14, 2009
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramp gate erase for dual bit flash memory
- Patent number 7,319,615
- Issue date Jan 15, 2008
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20120294103
- Publication date Nov 22, 2012
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT
- Publication number 20120224417
- Publication date Sep 6, 2012
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONALLY STACKED NON VOLATILE MEMORY UNITS
- Publication number 20120039113
- Publication date Feb 16, 2012
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20110267873
- Publication date Nov 3, 2011
- Seagate Technology LLC
- Shuiyuan Huang
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20110235412
- Publication date Sep 29, 2011
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT
- Publication number 20110194334
- Publication date Aug 11, 2011
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SHARED BIT LINE AND SOURCE LINE RESISTIVE SENSE MEMORY STRUCTURE
- Publication number 20110188301
- Publication date Aug 4, 2011
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
STATIC SOURCE PLANE IN STRAM
- Publication number 20110063901
- Publication date Mar 17, 2011
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT
- Publication number 20100315865
- Publication date Dec 16, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20100309717
- Publication date Dec 9, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
STATIS SOURCE PLANE IN STRAM
- Publication number 20100302839
- Publication date Dec 2, 2010
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONALLY STACKED NON VOLATILE MEMORY UNITS
- Publication number 20100265749
- Publication date Oct 21, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20100103732
- Publication date Apr 29, 2010
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICALLY INTEGRATED MEMORY STRUCTURES
- Publication number 20100096611
- Publication date Apr 22, 2010
- Seagate Technology LLC
- Xuguang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY RECONFIGURABLE SPIN TORQUE NON-VOLATILE MEMORY
- Publication number 20100091546
- Publication date Apr 15, 2010
- Seagate Technology LLC
- Hongyue Liu
- G11 - INFORMATION STORAGE
Information Patent Application
STATIC SOURCE PLANE IN STRAM
- Publication number 20100080053
- Publication date Apr 1, 2010
- Seagate Technology LLC
- Hai Li
- G11 - INFORMATION STORAGE
Information Patent Application
DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT
- Publication number 20100014347
- Publication date Jan 21, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20090289240
- Publication date Nov 26, 2009
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20090289290
- Publication date Nov 26, 2009
- Seagate Technology LLC
- Shuiyuan Huang
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20090161462
- Publication date Jun 25, 2009
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-PHASE WORDLINE ERASING FOR FLASH MEMORY
- Publication number 20080279014
- Publication date Nov 13, 2008
- SPANSION LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Cycling improvement using higher erase bias
- Publication number 20080151644
- Publication date Jun 26, 2008
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Application
Deep bitline implant to avoid program disturb
- Publication number 20080153274
- Publication date Jun 26, 2008
- Timothy Thurgate
- G11 - INFORMATION STORAGE
Information Patent Application
RAMP GATE ERASE FOR DUAL BIT FLASH MEMORY
- Publication number 20080037330
- Publication date Feb 14, 2008
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE

Xuguang Wang

Person

Patents Grantslast 30 patents

Non-volatile multi-bit memory with programmable capacitance

Controlling AC disturbance while programming

Diode assisted switching spin-transfer torque memory unit

Three dimensionally stacked non volatile memory units

Controlling AC disturbance while programming

Shared bit line and source line resistive sense memory structure

Diode assisted switching spin-transfer torque memory unit

Static source plane in STRAM

Static source plane in stram

Three dimensionally stacked non volatile memory units

Controlling AC disturbance while programming

Non-volatile memory with programmable capacitance

Diode assisted switching spin-transfer torque memory unit

Shared bit line and source line resistive sense memory structure

Static source plane in stram

Diode assisted switching spin-transfer torque memory unit

Non-volatile multi-bit memory with programmable capacitance

Controlling AC disturbance while programming

Deep bitline implant to avoid program disturb

Multi-phase wordline erasing for flash memory

Cycling improvement using higher erase bias

Ramp gate erase for dual bit flash memory

Patents Applicationslast 30 patents

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT

THREE DIMENSIONALLY STACKED NON VOLATILE MEMORY UNITS

NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT

SHARED BIT LINE AND SOURCE LINE RESISTIVE SENSE MEMORY STRUCTURE

STATIC SOURCE PLANE IN STRAM

DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT

NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE

STATIS SOURCE PLANE IN STRAM

THREE DIMENSIONALLY STACKED NON VOLATILE MEMORY UNITS

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

VERTICALLY INTEGRATED MEMORY STRUCTURES

HIGH DENSITY RECONFIGURABLE SPIN TORQUE NON-VOLATILE MEMORY

STATIC SOURCE PLANE IN STRAM

DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT

NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE

NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

MULTI-PHASE WORDLINE ERASING FOR FLASH MEMORY

Cycling improvement using higher erase bias

Deep bitline implant to avoid program disturb

RAMP GATE ERASE FOR DUAL BIT FLASH MEMORY