Xuhong Hu

Person

Lexington, SC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Light emitting device substrate with inclined sidewalls
- Patent number 10,096,742
- Issue date Oct 9, 2018
- Sensor Electronic Technology, Inc.
- Maxim S Shatalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device substrate with inclined sidewalls
- Patent number 9,595,636
- Issue date Mar 14, 2017
- Sensor Electronic Technology, Inc.
- Maxim S Shatalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chromium/titanium/aluminum-based semiconductor device contact fabri...
- Patent number 9,514,947
- Issue date Dec 6, 2016
- Sensor Electronic Technology, Inc.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating a chromium/titanium/aluminum-based semicondu...
- Patent number 9,064,845
- Issue date Jun 23, 2015
- Sensor Electronic Technology, Inc.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chromium/Titanium/Aluminum-based semiconductor device contact
- Patent number 8,766,448
- Issue date Jul 1, 2014
- Sensor Electronic Technology, Inc.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching a nitride-based heterostructure
- Patent number 7,429,534
- Issue date Sep 30, 2008
- Sensor Electronic Technology, Inc.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a textured nitride-based layer
- Patent number 6,903,385
- Issue date Jun 7, 2005
- Sensor Electronic Technology, Inc.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Light Emitting Device Substrate with Inclined Sidewalls
- Publication number 20160149099
- Publication date May 26, 2016
- SENSOR ELECTRONIC TECHNOLOGY, INC.
- Maxim S. Shatalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chromium/Titanium/Aluminum-based Semiconductor Device Contact
- Publication number 20150287602
- Publication date Oct 8, 2015
- SENSOR ELECTRONIC TECHNOLOGY, INC.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chromium/Titanium/Aluminum-based Semiconductor Device Contact
- Publication number 20140308766
- Publication date Oct 16, 2014
- SENSOR ELECTRONIC TECHNOLOGY, INC.
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light Emitting Device Substrate with Inclined Sidewalls
- Publication number 20130260490
- Publication date Oct 3, 2013
- Maxim S. Shatalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHROMIUM/TITANIUM/ALUMINUM-BASED SEMICONDUCTOR DEVICE CONTACT
- Publication number 20080315419
- Publication date Dec 25, 2008
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching a nitride-based heterostructure
- Publication number 20060186422
- Publication date Aug 24, 2006
- Remigijus Gaska
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor structure having a textured nitride-based layer
- Publication number 20040070003
- Publication date Apr 15, 2004
- Remigijus Gaska
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Light emitting device substrate with inclined sidewalls

Light emitting device substrate with inclined sidewalls

Chromium/titanium/aluminum-based semiconductor device contact fabri...

Methods of fabricating a chromium/titanium/aluminum-based semicondu...

Chromium/Titanium/Aluminum-based semiconductor device contact

Etching a nitride-based heterostructure

Semiconductor structure having a textured nitride-based layer

Patents Applicationslast 30 patents

Light Emitting Device Substrate with Inclined Sidewalls

Chromium/Titanium/Aluminum-based Semiconductor Device Contact

Chromium/Titanium/Aluminum-based Semiconductor Device Contact

Light Emitting Device Substrate with Inclined Sidewalls

CHROMIUM/TITANIUM/ALUMINUM-BASED SEMICONDUCTOR DEVICE CONTACT

Etching a nitride-based heterostructure

Semiconductor structure having a textured nitride-based layer