Ya-Jui Tsou

Person

Taichung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction structures and related methods
- Patent number 12,160,998
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanowire stack GAA device with selectable numbers of channel strips
- Patent number 12,100,737
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing memory device
- Patent number 12,069,965
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Jui Tsou
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and forming method thereof
- Patent number 12,062,713
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and formation method thereof
- Patent number 12,052,934
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Jen Chen
Information Patent Grant
Physically unclonable function cell and operation method of same
- Patent number 11,967,351
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Che Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 11,778,923
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Jui Tsou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device and manufacturing method thereof
- Patent number 11,749,328
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanowire stack GAA device with selectable numbers of channel strips
- Patent number 11,742,388
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction structures and related methods
- Patent number 11,605,670
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanowire stack GAA device with selectable numbers of channel strips
- Patent number 11,411,082
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device and manufacturing method thereof
- Patent number 11,410,714
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 11,177,430
- Issue date Nov 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Jui Tsou
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE WITH MAGNETIC TUNNEL JUNCTION
- Publication number 20240355912
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE
- Publication number 20240341200
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Jen CHEN
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF THE SAME
- Publication number 20240212732
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Che CHUNG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND FORMATION METHOD THEREOF
- Publication number 20230397501
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Jui TSOU
- G11 - INFORMATION STORAGE
Information Patent Application
NANOWIRE STACK GAA DEVICE WITH SELECTABLE NUMBERS OF CHANNEL STRIPS
- Publication number 20230369407
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230360686
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zong-You LUO
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING MEMORY DEVICE
- Publication number 20230363287
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Jui TSOU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20230255122
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Jen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20230170403
- Publication date Jun 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMATION METHOD THEREOF
- Publication number 20230027792
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jih-Chao CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF SAME
- Publication number 20230013730
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Che CHUNG
- G11 - INFORMATION STORAGE
Information Patent Application
NANOWIRE STACK GAA DEVICE WITH SELECTABLE NUMBERS OF CHANNEL STRIPS
- Publication number 20230015775
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220358980
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zong-You LUO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20220359615
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zong-You Luo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20220077384
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Jui TSOU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210082482
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zong-You LUO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200395530
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Jui TSOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STACK GAA DEVICE WITH SELECTABLE NUMBERS OF CHANNEL STRIPS
- Publication number 20200144367
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20200135804
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zong-You Luo
- G11 - INFORMATION STORAGE

Ya-Jui Tsou

Person

Patents Grantslast 30 patents

Magnetic tunnel junction structures and related methods

Nanowire stack GAA device with selectable numbers of channel strips

Method for manufacturing memory device

Memory device and forming method thereof

Memory structure and formation method thereof

Physically unclonable function cell and operation method of same

Memory device

Magnetoresistive memory device and manufacturing method thereof

Nanowire stack GAA device with selectable numbers of channel strips

Magnetic tunnel junction structures and related methods

Nanowire stack GAA device with selectable numbers of channel strips

Magnetoresistive memory device and manufacturing method thereof

Memory device and manufacturing method thereof

Patents Applicationslast 30 patents

MEMORY DEVICE WITH MAGNETIC TUNNEL JUNCTION

MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE

PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF THE SAME

MEMORY DEVICE AND FORMATION METHOD THEREOF

NANOWIRE STACK GAA DEVICE WITH SELECTABLE NUMBERS OF CHANNEL STRIPS

MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING MEMORY DEVICE

MEMORY STRUCTURE AND FORMATION METHOD THEREOF

MEMORY DEVICE AND FORMING METHOD THEREOF

MEMORY DEVICE AND FORMATION METHOD THEREOF

PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF SAME

NANOWIRE STACK GAA DEVICE WITH SELECTABLE NUMBERS OF CHANNEL STRIPS

MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

MEMORY DEVICE

MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

NANOWIRE STACK GAA DEVICE WITH SELECTABLE NUMBERS OF CHANNEL STRIPS

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS