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HSINCHU COUNTY, TW
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Patents Grants
last 30 patents
Information
Patent Grant
Low voltage difference operated EEPROM and operating method thereof
Patent number
9,601,202
Issue date
Mar 21, 2017
Yield Microelectronics Corp.
Hsin-Chang Lin
G11 - INFORMATION STORAGE
Information
Patent Grant
Method for operating small-area EEPROM array
Patent number
9,318,208
Issue date
Apr 19, 2016
Yield Microelectronics Corp.
Hsin-Chang Lin
G11 - INFORMATION STORAGE
Information
Patent Grant
Non-volatile memory with a single gate-source common terminal and o...
Patent number
9,281,312
Issue date
Mar 8, 2016
Yield Microelectronics Corp.
Hsin-Chang Lin
G11 - INFORMATION STORAGE
Information
Patent Grant
Method for operating low-cost EEPROM array
Patent number
9,240,242
Issue date
Jan 19, 2016
Yield Microelectronics Corp.
Hsin-Chang Lin
G11 - INFORMATION STORAGE
Information
Patent Grant
Low-voltage EEPROM array
Patent number
8,305,808
Issue date
Nov 6, 2012
Yield Microelectronics Corp.
Hsin Chang Lin
G11 - INFORMATION STORAGE
Information
Patent Grant
Area saving electrically-erasable-programmable read-only memory (EE...
Patent number
8,300,461
Issue date
Oct 30, 2012
Yield Microelectronics Corp.
Hsin Chang Lin
G11 - INFORMATION STORAGE
Information
Patent Grant
Cost saving electrically-erasable-programmable read-only memory (EE...
Patent number
8,300,469
Issue date
Oct 30, 2012
Yield Microelectronics Corp.
Hsin Chang Lin
G11 - INFORMATION STORAGE
Patents Applications
last 30 patents
Information
Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
Publication number
20160379712
Publication date
Dec 29, 2016
YIELD MICROELECTRONICS CORP.
HSIN-CHANG LIN
G11 - INFORMATION STORAGE
Information
Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
Publication number
20160329104
Publication date
Nov 10, 2016
YIELD MICROELECTRONICS CORP.
HSIN-CHANG LIN
G11 - INFORMATION STORAGE
Information
Patent Application
NON-VOLATILE MEMORY WITH A SINGLE GATE-SOURCE COMMON TERMINAL AND O...
Publication number
20160013194
Publication date
Jan 14, 2016
YIELD MICROELECTRONICS CORP.
HSIN-CHANG LIN
G11 - INFORMATION STORAGE
Information
Patent Application
NON-SELF-ALIGNED NON-VOLATILE MEMORY STRUCTURE
Publication number
20130334586
Publication date
Dec 19, 2013
YIELD MICROELECTRONICS CORP.
HSIN CHANG LIN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NON-SELF ALIGNED NON-VOLATILE MEMORY STRUCTURE
Publication number
20130181276
Publication date
Jul 18, 2013
YIELD MICROELECTRONICS CORP.
HSIN CHANG LIN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
AREA SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...
Publication number
20120051147
Publication date
Mar 1, 2012
YIELD MICROELECTRONICS CORP.
HSIN CHANG LIN
G11 - INFORMATION STORAGE
Information
Patent Application
COST SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...
Publication number
20120039129
Publication date
Feb 16, 2012
YIELD MICROELECTRONICS CORP.
HSIN CHANG LIN
G11 - INFORMATION STORAGE
Information
Patent Application
LOW-VOLTAGE EEPROM ARRAY
Publication number
20120039131
Publication date
Feb 16, 2012
YIELD MICROELECTRONICS CORP.
HSIN-CHANG LIN
G11 - INFORMATION STORAGE
Information
Patent Application
METHOD FOR INTEGRATING DRAM AND NVM
Publication number
20120040504
Publication date
Feb 16, 2012
YIELD MICROELECTRONICS CORP.
HSIN CHANG LIN
H01 - BASIC ELECTRIC ELEMENTS