Yan GU

Person

Jiangsu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate bipolar transistor
- Patent number 12,119,395
- Issue date Oct 15, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression device and manufacturing method therefor
- Patent number 12,015,025
- Issue date Jun 18, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression device and manufacturing method therefor
- Patent number 11,887,979
- Issue date Jan 30, 2024
- CSMC Technologies Fab2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TVS device and manufacturing method therefor
- Patent number 11,430,780
- Issue date Aug 30, 2022
- CSMC Technologies Fab2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate depletion mode VDMOS device and method for manufacturin...
- Patent number 11,387,349
- Issue date Jul 12, 2022
- CSMC Technologies Fab2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device and electronic apparatus
- Patent number 11,276,690
- Issue date Mar 15, 2022
- CSMC Technologies FAB2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor device and integrated semico...
- Patent number 11,257,720
- Issue date Feb 22, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression device and manufacturing method therefor
- Patent number 11,233,045
- Issue date Jan 25, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device and integrated semico...
- Patent number 11,171,223
- Issue date Nov 9, 2021
- CSMC Technologies FAB2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integrated with junction field effect transistor and method...
- Patent number 10,879,385
- Issue date Dec 29, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integrated with junction field effect transistor and method...
- Patent number 10,872,823
- Issue date Dec 22, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integrated with depletion-mode junction fielf-effect transis...
- Patent number 10,867,995
- Issue date Dec 15, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor
- Patent number 10,290,726
- Issue date May 14, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR
- Publication number 20240222478
- Publication date Jul 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Sen ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
- Publication number 20240072178
- Publication date Feb 29, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transient Voltage Suppression Device And Manufacturing Method Therefor
- Publication number 20230122120
- Publication date Apr 20, 2023
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20220376094
- Publication date Nov 24, 2022
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TVS Device And Manufacturing Method Therefor
- Publication number 20210358903
- Publication date Nov 18, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transient Voltage Suppression Device And Manufacturing Method Therefor
- Publication number 20210313312
- Publication date Oct 7, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transient Voltage Suppression Device and Manufacturing Method Therefor
- Publication number 20210249403
- Publication date Aug 12, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Gate Depletion Mode VDMOS Device and Method for Manufacturin...
- Publication number 20210167191
- Publication date Jun 3, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND INTEGRATED SEMICO...
- Publication number 20200350420
- Publication date Nov 5, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND INTERGRATED SEMIC...
- Publication number 20200335607
- Publication date Oct 22, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
- Publication number 20200335498
- Publication date Oct 22, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...
- Publication number 20190259669
- Publication date Aug 22, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...
- Publication number 20190252537
- Publication date Aug 15, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATED WITH DEPLETION-MODE JUNCTION FIELF-EFFECT TRANSIS...
- Publication number 20190221560
- Publication date Jul 18, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20180012980
- Publication date Jan 11, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Insulated gate bipolar transistor

Transient voltage suppression device and manufacturing method therefor

Transient voltage suppression device and manufacturing method therefor

TVS device and manufacturing method therefor

Trench gate depletion mode VDMOS device and method for manufacturin...

Integrated semiconductor device and electronic apparatus

Manufacturing method for semiconductor device and integrated semico...

Transient voltage suppression device and manufacturing method therefor

Method for manufacturing semiconductor device and integrated semico...

Device integrated with junction field effect transistor and method...

Device integrated with junction field effect transistor and method...

Device integrated with depletion-mode junction fielf-effect transis...

Lateral insulated gate bipolar transistor

Patents Applicationslast 30 patents

REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR

DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

Transient Voltage Suppression Device And Manufacturing Method Therefor

INSULATED GATE BIPOLAR TRANSISTOR

TVS Device And Manufacturing Method Therefor

Transient Voltage Suppression Device And Manufacturing Method Therefor

Transient Voltage Suppression Device and Manufacturing Method Therefor

Trench Gate Depletion Mode VDMOS Device and Method for Manufacturin...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND INTEGRATED SEMICO...

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND INTERGRATED SEMIC...

INTEGRATED SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...

DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...

DEVICE INTEGRATED WITH DEPLETION-MODE JUNCTION FIELF-EFFECT TRANSIS...

LATERAL INSULATED GATE BIPOLAR TRANSISTOR