Yan Sun

Person

San Diego, CA, US

People

Patents Applicationslast 30 patents

Information Patent Application
PASS-THROUGH STRUCTURES
- Publication number 20250212482
- Publication date Jun 26, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID HIGH-PERFORMANCE CELL WITH BACKSIDE CONTACT
- Publication number 20250212524
- Publication date Jun 26, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND AND FORKSHEET DEVICE ARCHITECTURE IN STANDARD CELLS
- Publication number 20250210519
- Publication date Jun 26, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED SOURCE/DRAIN EPITAXIAL STRUCTURE FOR DIRECT BACKSIDE CONTACT
- Publication number 20250212457
- Publication date Jun 26, 2025
- QUALCOMM Incorporated
- Yan SUN
Information Patent Application
FORKSHEET DEVICE ARCHITECTURE IN STANDARD CELLS
- Publication number 20250212481
- Publication date Jun 26, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEEP RECESS SOURCE/DRAIN STRUCTURE FOR DIRECT BACKSIDE PO...
- Publication number 20250212513
- Publication date Jun 26, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
Information Patent Application
ELECTRONIC DEVICES EMPLOYING THIN-GATE INSULATOR TRANSISTORS COUPLE...
- Publication number 20250185300
- Publication date Jun 5, 2025
- QUALCOMM Incorporated
- Qingqing Liang
Information Patent Application
DIODE STRUCTURE FOR DIRECT BACKSIDE CONTACT, BACKSIDE POWER DELIVER...
- Publication number 20250151346
- Publication date May 8, 2025
- QUALCOMM Incorporated
- Hao WANG
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH DIRECT V...
- Publication number 20250151386
- Publication date May 8, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
Information Patent Application
MEMORY CELL STRUCTURES USING BACKSIDE METAL CROSS-COUPLE STRUCTURES
- Publication number 20250151253
- Publication date May 8, 2025
- QUALCOMM Incorporated
- Yan SUN
Information Patent Application
GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING TRENCH-TIE-DOWN...
- Publication number 20250098301
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Deepak SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING CONTACT JUMPER A...
- Publication number 20250098204
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Deepak SHARMA
Information Patent Application
SELF-ALIGNED BACKSIDE INTERCONNECT
- Publication number 20250098256
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Yan SUN
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH VERTICAL...
- Publication number 20250098221
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
Information Patent Application
MEMORY CELL STRUCTURES USING FULL BACKSIDE CONNECTIVITY
- Publication number 20250096075
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT LOGIC CELLS USING FULL BACKSIDE CONNECTIVITY
- Publication number 20250098302
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
- Publication number 20250098217
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Yan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
- Publication number 20250096130
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS AND METHODS F...
- Publication number 20250098220
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
Information Patent Application
BACKSIDE BI-DIRECTIONAL INTERCONNECT
- Publication number 20250098267
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Yan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...
- Publication number 20240429300
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES
- Publication number 20240421209
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...
- Publication number 20240371924
- Publication date Nov 7, 2024
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Applicationslast 30 patents

PASS-THROUGH STRUCTURES

HYBRID HIGH-PERFORMANCE CELL WITH BACKSIDE CONTACT

GATE-ALL-AROUND AND FORKSHEET DEVICE ARCHITECTURE IN STANDARD CELLS

RECESSED SOURCE/DRAIN EPITAXIAL STRUCTURE FOR DIRECT BACKSIDE CONTACT

FORKSHEET DEVICE ARCHITECTURE IN STANDARD CELLS

SELECTIVE DEEP RECESS SOURCE/DRAIN STRUCTURE FOR DIRECT BACKSIDE PO...

ELECTRONIC DEVICES EMPLOYING THIN-GATE INSULATOR TRANSISTORS COUPLE...

DIODE STRUCTURE FOR DIRECT BACKSIDE CONTACT, BACKSIDE POWER DELIVER...

COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH DIRECT V...

MEMORY CELL STRUCTURES USING BACKSIDE METAL CROSS-COUPLE STRUCTURES

GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING TRENCH-TIE-DOWN...

GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING CONTACT JUMPER A...

SELF-ALIGNED BACKSIDE INTERCONNECT

COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH VERTICAL...

MEMORY CELL STRUCTURES USING FULL BACKSIDE CONNECTIVITY

COMPACT LOGIC CELLS USING FULL BACKSIDE CONNECTIVITY

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES

COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS AND METHODS F...

BACKSIDE BI-DIRECTIONAL INTERCONNECT

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...

SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...