Yan Wen

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Shenzhen, CN

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Patents Grantslast 30 patents

Information Patent Grant
High-voltage LDMOS integrated device
- Patent number 9,236,469
- Issue date Jan 12, 2016
- Peking University Founder Group Co., Ltd.
- Guangran Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR FABRICATING METHOD AND TRANSISTOR
- Publication number 20150130025
- Publication date May 14, 2015
- PEKING UNIVERSITY FOUNDER GROUP CO., LTD.
- Guangran PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICE AND METHOD FOR FABRICATING THE INTEGRATED DEVICE
- Publication number 20140167158
- Publication date Jun 19, 2014
- Founder Microelectronics International Co., Ltd.
- Guangran PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE LDMOS INTEGRATED DEVICE
- Publication number 20140145262
- Publication date May 29, 2014
- Founder Microelectronics International Co., Ltd.
- Guangran Pan
- H01 - BASIC ELECTRIC ELEMENTS