Yanbiao Pan

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Carbon and/or oxygen doped polysilicon resistor
- Patent number 12,027,515
- Issue date Jul 2, 2024
- Texas Instruments Incorporated
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon resistor using reduced grain size polysilicon
- Patent number 11,817,454
- Issue date Nov 14, 2023
- Texas Instruments Incorporated
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an integrated deep trench capacitor havin...
- Patent number 11,742,436
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low noise transistor and low temperature...
- Patent number 11,676,961
- Issue date Jun 13, 2023
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an integrated deep trench capacitor havin...
- Patent number 11,222,986
- Issue date Jan 11, 2022
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deep trench isolation and trench capacitor
- Patent number 11,195,958
- Issue date Dec 7, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deep trench isolation and trench capacitor
- Patent number 10,811,543
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER
- Publication number 20250006836
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jackson Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon and/or Oxygen Doped Polysilicon Resistor
- Publication number 20240312984
- Publication date Sep 19, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF S...
- Publication number 20240112947
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Scott Kelly Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...
- Publication number 20230290775
- Publication date Sep 14, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon and/or Oxygen Doped Polysilicon Resistor
- Publication number 20230112644
- Publication date Apr 13, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON RESISTORS WITH HIGH SHEET RESISTANCE
- Publication number 20220399434
- Publication date Dec 15, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON RESISTOR USING REDUCED GRAIN SIZE POLYSILICON
- Publication number 20220238516
- Publication date Jul 28, 2022
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...
- Publication number 20220139907
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...
- Publication number 20220077324
- Publication date Mar 10, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...
- Publication number 20210028316
- Publication date Jan 28, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR
- Publication number 20210005760
- Publication date Jan 7, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR
- Publication number 20200212229
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS

Yanbiao Pan

Person

Patents Grantslast 30 patents

Carbon and/or oxygen doped polysilicon resistor

Polysilicon resistor using reduced grain size polysilicon

Semiconductor device with an integrated deep trench capacitor havin...

Semiconductor device with low noise transistor and low temperature...

Semiconductor device with an integrated deep trench capacitor havin...

Semiconductor device with deep trench isolation and trench capacitor

Semiconductor device with deep trench isolation and trench capacitor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER

Carbon and/or Oxygen Doped Polysilicon Resistor

SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF S...

SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...

Carbon and/or Oxygen Doped Polysilicon Resistor

POLYSILICON RESISTORS WITH HIGH SHEET RESISTANCE

POLYSILICON RESISTOR USING REDUCED GRAIN SIZE POLYSILICON

SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...

SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...

SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...

SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR

SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR