Yaneng MIN

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
IGBT and manufacturing method therefor
- Patent number 11,652,164
- Issue date May 16, 2023
- GTA Semiconductor Co., Ltd.
- Xueliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and fabrication method therefor
- Patent number 11,605,725
- Issue date Mar 14, 2023
- ADVANCED SEMICONDUCTOR MANUFACTURING CORPORATION., LTD.
- Xueliang Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IGBT And Manufacturing Method Therefor
- Publication number 20210313457
- Publication date Oct 7, 2021
- GTA Semiconductor Co., LTD.
- Xueliang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor And Fabrication Method Therefor
- Publication number 20210234019
- Publication date Jul 29, 2021
- ADVANCED SEMICONDUCTOR MANUFACTURING CORPORATION., LTD.
- Xueliang WANG
- H01 - BASIC ELECTRIC ELEMENTS