Yang Cao

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tungsten alloys in semiconductor devices
- Patent number 12,080,648
- Issue date Sep 3, 2024
- Intel Corporation
- Yang Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten alloys in semiconductor devices
- Patent number 11,195,798
- Issue date Dec 7, 2021
- Intel Corporation
- Yang Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using cell voltage as a monitor for deposition coverage
- Patent number 7,985,328
- Issue date Jul 26, 2011
- Intel Corporation
- Yang Cao
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method for manufacturing a semiconductor device using the self alig...
- Patent number 7,741,219
- Issue date Jun 22, 2010
- Intel Corporation
- Vinay B. Chikarmane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using cell voltage as a monitor for deposition coverage
- Patent number 7,371,312
- Issue date May 13, 2008
- Intel Corporation
- Yang Cao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNGSTEN ALLOYS IN SEMICONDUCTOR DEVICES
- Publication number 20220059467
- Publication date Feb 24, 2022
- Intel Corporation
- Yang CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-INDUCED THRESHOLD VOLTAGE TUNING IN III-N TRANSISTORS
- Publication number 20200335590
- Publication date Oct 22, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20200313001
- Publication date Oct 1, 2020
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNGSTEN ALLOYS IN SEMICONDUCTOR DEVICES
- Publication number 20170018506
- Publication date Jan 19, 2017
- Intel Corporation
- Yang CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device using the self align...
- Publication number 20090004857
- Publication date Jan 1, 2009
- Vinay B. Chikarmane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using cell voltage as a monitor for deposition coverage
- Publication number 20080142363
- Publication date Jun 19, 2008
- Yang Cao
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Catalytic activation technique for electroless metallization of int...
- Publication number 20070066081
- Publication date Mar 22, 2007
- Chin-Chang Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods for reducing protrusions and within die thickness variation...
- Publication number 20060091018
- Publication date May 4, 2006
- Yang Cao
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Substantially void free interconnect formation
- Publication number 20050285269
- Publication date Dec 29, 2005
- Yang Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using cell voltage as a monitor for deposition coverage
- Publication number 20050227381
- Publication date Oct 13, 2005
- Yang Cao
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Methods for reducing protrusions and within die thickness variation...
- Publication number 20040188265
- Publication date Sep 30, 2004
- Yang Cao
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Person

Patents Grantslast 30 patents

Tungsten alloys in semiconductor devices

Source or drain structures for germanium N-channel devices

Charge-induced threshold voltage tuning in III-N transistors

Tungsten alloys in semiconductor devices

Using cell voltage as a monitor for deposition coverage

Method for manufacturing a semiconductor device using the self alig...

Using cell voltage as a monitor for deposition coverage

Patents Applicationslast 30 patents

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

TUNGSTEN ALLOYS IN SEMICONDUCTOR DEVICES

CHARGE-INDUCED THRESHOLD VOLTAGE TUNING IN III-N TRANSISTORS

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

TUNGSTEN ALLOYS IN SEMICONDUCTOR DEVICES

Method of manufacturing a semiconductor device using the self align...

Using cell voltage as a monitor for deposition coverage

Catalytic activation technique for electroless metallization of int...

Methods for reducing protrusions and within die thickness variation...

Substantially void free interconnect formation

Using cell voltage as a monitor for deposition coverage

Methods for reducing protrusions and within die thickness variation...