Yanhua Wang

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Beijing, CN

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Patents Grantslast 30 patents

Information Patent Grant
Metal oxide resistive switching memory and method for manufacturing...
- Patent number 8,735,245
- Issue date May 27, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random memory cell and memory
- Patent number 8,665,631
- Issue date Mar 4, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coding method for binary digits coding and its circuit for digits t...
- Patent number 7,463,682
- Issue date Dec 9, 2008
- Institute of Process Engineering, Chinese Academy of Sciences
- Zhangyuan Yang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
METAL OXIDE RESISTIVE SWITCHING MEMORY AND METHOD FOR MANUFACTURING...
- Publication number 20120305883
- Publication date Dec 6, 2012
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM MEMORY CELL AND MEMORY
- Publication number 20120281452
- Publication date Nov 8, 2012
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Coding method for binary digits coding and its circuit for digits t...
- Publication number 20040071208
- Publication date Apr 15, 2004
- INSTITUTE OF PROCESS ENGINEERING ACADEMY OF SCIENCES
- Zhangyuan Yang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE